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Mojun Pan

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el

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preprint2026arXiv

Observation of spin-valley locked nodal lines in a quasi-2D altermagnet

The interplay among quantum degrees of freedom-spin, orbital and momentum-has emerged as a fertile ground for realizing magnetic quantum states with transformative potential for electronic and spintronic technologies. Prominent examples include ferromagnetic Weyl semimetals and antiferromagnetic axion insulators. Recently, altermagnets(AMs) have been identified as a distinct spin-splitting class of collinear antiferromagnets(AFMs), characterized by crystal symmetry that connects magnetic sublattices in real space and enforces C-paired spin-momentum locking in reciprocal space. These materials combine the advantages of nonrelativistic spin-polarization akin to FMs and vanished net-magnetization as AFMs, making them highly promising for spintronic applications. Furthermore, they introduce nontrivial spin-momentum locking spin texture as an additional degree of freedom for realizing novel quantum phases. In this work, we report the discovery of a new type of spin-valley-locked nodal line phase in the layered AM Rb-intercalated V{_2}Te{_2}O. By combining high-resolution spin and angle-resolved photoemission spectroscopy with first-principles calculations, we observe the coexistence of both spinless and spinful nodal lines near the Fermi level. Remarkably, the spinful nodal lines exhibit uniform spin polarization within each valley, while displaying opposite spin polarizations across symmetry-paired valleys-a unique feature we term spin-valley-locked nodal lines, which is exclusive to AMs. Direct measurements of out-of-plane band dispersion using a side-cleaving technique reveal the two-dimensional nature of these nodal lines. Our findings not only unveil a previously unexplored topological phase in AMs where valley-locked spin as an additional quantum character but also establish RbV{_2}Te{_2}O as a promising platform for spintronics, valleytronics, and moire-engineered quantum devices.

preprint2024arXiv

Nonvolatile optical control of interlayer stacking order in 1T-TaS2

Nonvolatile optical manipulation of material properties on demand is a highly sought-after feature in the advancement of future optoelectronic applications. While the discovery of such metastable transition in various materials holds good promise for achieving this goal, their practical implementation is still in the nascent stage. Here, we unravel the nature of the ultrafast laser-induced hidden state in 1T-TaS2 by systematically characterizing the electronic structure evolution throughout the reversible transition cycle. We identify it as a mixed-stacking state involving two similarly low-energy interlayer orders, which is manifested as the charge density wave phase disruption. Furthermore, our comparative experiments utilizing the single-pulse writing, pulse-train erasing and pulse-pair control explicitly reveal the distinct mechanism of the bidirectional transformations -- the ultrafast formation of the hidden state is initiated by a coherent phonon which triggers a competition of interlayer stacking orders, while its recovery to the initial state is governed by the progressive domain coarsening. Our work highlights the deterministic role of the competing interlayer orders in the nonvolatile phase transition in the layered material 1T-TaS2, and promises the coherent control of the phase transition and switching speed. More importantly, these results establish all-optical engineering of stacking orders in low-dimensional materials as a viable strategy for achieving desirable nonvolatile electronic devices.