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Anyuan Gao

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Published work

3 published item(s)

preprint2026arXiv

Observation of spin-valley locked nodal lines in a quasi-2D altermagnet

The interplay among quantum degrees of freedom-spin, orbital and momentum-has emerged as a fertile ground for realizing magnetic quantum states with transformative potential for electronic and spintronic technologies. Prominent examples include ferromagnetic Weyl semimetals and antiferromagnetic axion insulators. Recently, altermagnets(AMs) have been identified as a distinct spin-splitting class of collinear antiferromagnets(AFMs), characterized by crystal symmetry that connects magnetic sublattices in real space and enforces C-paired spin-momentum locking in reciprocal space. These materials combine the advantages of nonrelativistic spin-polarization akin to FMs and vanished net-magnetization as AFMs, making them highly promising for spintronic applications. Furthermore, they introduce nontrivial spin-momentum locking spin texture as an additional degree of freedom for realizing novel quantum phases. In this work, we report the discovery of a new type of spin-valley-locked nodal line phase in the layered AM Rb-intercalated V{_2}Te{_2}O. By combining high-resolution spin and angle-resolved photoemission spectroscopy with first-principles calculations, we observe the coexistence of both spinless and spinful nodal lines near the Fermi level. Remarkably, the spinful nodal lines exhibit uniform spin polarization within each valley, while displaying opposite spin polarizations across symmetry-paired valleys-a unique feature we term spin-valley-locked nodal lines, which is exclusive to AMs. Direct measurements of out-of-plane band dispersion using a side-cleaving technique reveal the two-dimensional nature of these nodal lines. Our findings not only unveil a previously unexplored topological phase in AMs where valley-locked spin as an additional quantum character but also establish RbV{_2}Te{_2}O as a promising platform for spintronics, valleytronics, and moire-engineered quantum devices.

preprint2020arXiv

Gate-tunable van der Waals heterostructure for reconfigurable neural network vision sensor

Early processing of visual information takes place in the human retina. Mimicking neurobiological structures and functionalities of the retina provide a promising pathway to achieving vision sensor with highly efficient image processing. Here, we demonstrate a prototype vision sensor that operates via the gate-tunable positive and negative photoresponses of the van der Waals (vdW) vertical heterostructures. The sensor emulates not only the neurobiological functionalities of bipolar cells and photoreceptors but also the unique synaptic connectivity between bipolar cells and photoreceptors. By tuning gate voltage for each pixel, we achieve reconfigurable vision sensor for simultaneously image sensing and processing. Furthermore, our prototype vision sensor itself can be trained to classify the input images, via updating the gate voltages applied individually to each pixel in the sensor. Our work indicates that vdW vertical heterostructures offer a promising platform for the development of neural network vision sensor.

preprint2019arXiv

Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors

Semiconducting nanowires offer many opportunities for electronic and optoelectronic device applications due to their special geometries and unique physical properties. However, it has been challenging to synthesize semiconducting nanowires directly on SiO2/Si substrate due to lattice mismatch. Here, we developed a catalysis-free approach to achieve direct synthesis of long and straight InSe nanowires on SiO2/Si substrate through edge-homoepitaxial growth. We further achieved parallel InSe nanowires on SiO2/Si substrate through controlling growth conditions. We attributed the underlying growth mechanism to selenium self-driven vapor-liquid-solid process, which is distinct from conventional metal-catalytic vapor-liquid-solid method widely used for growing Si and III-V nanowires. Furthermore, we demonstrated that the as-grown InSe nanowire-based visible light photodetector simultaneously possesses an extraordinary photoresponsivity of 271 A/W, ultrahigh detectivity of 1.57*10^14 Jones and a fast response speed of microsecond scale. The excellent performance of the photodetector indicates that as-grown InSe nanowires are promising in future optoelectronic applications. More importantly, the proposed edge-homoepitaxial approach may open up a novel avenue for direct synthesis of semiconducting nanowire arrays on SiO2/Si substrate.