Source author record

Mohammad Ramezani

Mohammad Ramezani appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
2topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2016arXiv

Coherent control of the optical absorption in a plasmonic lattice coupled to a luminescent layer

We experimentally demonstrate the coherent control, i.e., phase-dependent enhancement and suppression, of the optical absorption in an array of metallic nanoantennas covered by a thin lu- minescent layer. The coherent control is achieved by using two collinear, counter-propagating and phase-controlled incident waves with wavelength matching the absorption spectrum of dye molecules coupled to the array. Symmetry arguments shed light on the relation between the relative phase of the incident waves and the excitation efficiency of the optical resonances of the system. This coherent control is associated with a phase-dependent distribution of the electromagnetic near-fields in the structure which enables a significant reduction of the unwanted dissipation in the metallic structures.

preprint2013arXiv

Electrical transport in C-doped GaAs nanowires: surface effects

The resistivity and the mobility of Carbon doped GaAs nanowires have been studied for different doping concentrations. Surface effects have been evaluated by comparing upassivated with passivated nanowires. We directly see the influence of the surface: the pinning of the Fermi level and the consequent existence of a depletion region lead to an increase of the mobility up to 30 cm^2/(V*s) for doping concentrations lower than 3*10^18 cm^-3. Electron beam induced current measurements show that the minority carrier diffusion path can be as high as 190 nm for passivated nanowires.