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Miyoung Kim

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cond-mat.mtrl-sci cond-mat.str-el cond-mat.mes-hall

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preprint2022arXiv

Experimental verification of polar structures in ultrathin BaTiO_{3} layers using resonant x-ray reflectivity

Functional devices with ultrathin ferroelectric layers have been attracted as a promising candidate for next-generation memory and logic device applications. Using the ultrathin ferroelectric layers, particularly approaching the two-dimensional limit, however, it is still challenging to control ferroelectric switching and to observe ferroelectricity by spectroscopic tools. In particular, conventional methods such as electrical measurements and piezoelectric response force microscopy are very limited due to leakage currents and the smallness of the ferroelectric signals. Here, we show that the ferroelectricity of ultrathin SrRuO3/BaTiO3/SrRuO3 heterostructures grown on SrTiO3(100) substrates can be measured using resonant x-ray reflectivity (RXRR). This experimental technique can provide an element-specific electronic depth profile as well as increased sensitivity to Ti off-center displacements at the Ti K pre-edge. The depth-sensitivity of RXRR selectively detects the strong polarization dependence of the Ti pre-edge features of ultrathin BaTiO3 layers while discriminating the contribution of the SrTiO3 substrate. This technique verified that the BaTiO3 layer can be ferroelectric down to the lowest experimental limit of a critical thickness of 2.5 unit cells. Our results can open a novel way to explore ultrathin ferroelectric-based nano-electronic devices.

preprint2022arXiv

Heteroepitaxial control of Fermi liquid, Hund metal, and Mott insulator phases in the single-atomic-layer limit

Interfaces between dissimilar correlated oxides can offer devices with versatile functionalities. In that respect, manipulating and measuring novel physical properties of oxide heterointerfaces are highly desired. Yet, despite extensive studies, obtaining direct information on their momentum-resolved electronic structure remains a great challenge. This is because most correlated interfacial phenomena appear within a few atomic layers from the interface, thus limiting the application of available experimental probes. Here, we utilize atomic-scale epitaxy and photoemission spectroscopy to demonstrate the interface control of correlated electronic phases in atomic-scale ruthenate--titanate heterostructures. While bulk SrRuO$_3$ is a ferromagnetic metal, the heterointerfaces exclusively realize three distinct correlated phases in the single-atomic-layer limit. Our theory reveals that atomic-scale structural proximity effects lead to the emergence of Fermi liquid, Hund metal, and Mott insulator phases in the quantum-confined SrRuO$_3$. These results highlight the extensive interfacial tunability of electronic phases, hitherto hidden in the atomically thin correlated heterostructure.

preprint2021arXiv

Growth and atomically resolved polarization mapping of ferroelectric $Bi_2WO_6$ thin film

Aurivillius ferroelectric $Bi_2WO_6$ (BWO) encompasses a broad range of functionalities, including robust fatigue-free ferroelectricity, high photocatalytic activity, and ionic conductivity. Despite these promising characteristics, an in-depth study on the growth of BWO thin films and ferroelectric characterization, especially at the atomic scale, is still lacking. Here, we report pulsed laser deposition (PLD) of BWO thin films on (001) $SrTiO_3$ substrates and characterization of ferroelectricity using the scanning transmission electron microscopy (STEM) and piezoresponse force microscopy (PFM) techniques. We show that the background oxygen gas pressure used during PLD growth mainly determines the phase stability of BWO films, whereas the influence of growth temperature is comparatively minor. Atomically resolved STEM study of a fully strained BWO film revealed collective in-plane polar off-centering displacement of W atoms. We estimated the spontaneous polarization value based on polar displacement mapping to be about 54 $\pm$ 4 $μC cm^{-2}$, which is in good agreement with the bulk polarization value. Furthermore, we found that pristine film is composed of type-I and type-II domains, with mutually orthogonal polar axes. Complementary PFM measurements further elucidated that the coexisting type-I and type-II domains formed a multidomain state that consisted of 90$°$ domain walls (DWs) alongside multiple head-to-head and tail-to-tail 180$°$ DWs. Application of an electrical bias led to in-plane 180$°$ polarization switching and 90$°$ polarization rotation, highlighting a unique aspect of domain switching, which is immune to substrate-induced strain.

preprint2019arXiv

Noncollinear magnetic sampling method for paramagnetic Mott insulator MnO

We present a new approach based on the static density functional theory (DFT) to describe paramagentic MnO, which is a representative paramagnetic Mott insulator. We appended the spin noncollinearity and the canonical ensemble to the magnetic sampling method (MSM), which is one of the supercell approaches based on disordered local moment model. The combination of the noncollinear MSM (NCMSM) with DFT$+U$ represents a highly favorable computational method called NCMSM$+U$ to accurately determine the paramagnetic properties of MnO with moderate numerical cost. The effects of electron correlations and spin noncollinearity on the properties of MnO were also investigated. We revealed that the spin noncollinearity plays an important role in determining the detailed electronic profile and precise energetics of paramagnetic MnO. Our results illustrate that the NCMSM$+U$ approach may be used as an alternative to the $\textit{ab initio}$ framework of dynamic mean field theory based on DFT in the simulation of the high-temperature properties of Mott insulators.

preprint2014arXiv

Interfacial microscopic mechanism of free energy minimization in Omega precipitate formation

Precipitate strengthening of light metals underpins a large segment of industry.Yet, quantitative understanding of physics involved in precipitate formation is often lacking, especially, about interfacial contribution to the energetics of precipitate formation.Here, we report an intricate strain accommodation and free energy minimization mechanism in the formation of Omega precipitates (Al2Cu)in the Al_Cu_Mg_Ag alloy. We show that the affinity between Ag and Mg at the interface provides the driving force for lowering the heat of formation, while substitution between Mg, Al and Cu of different atomic radii at interfacial atomic sites alters interfacial thickness and adjust precipitate misfit strain. The results here highlight the importance of interfacial structure in precipitate formation, and the potential of combining the power of atomic resolution imaging with first-principles theory for unraveling the mystery of physics at nanoscale interfaces.

preprint2013arXiv

Ordered Growth of Topological Insulator Bi2Se3 Thin Films on Dielectric Amorphous SiO2 by MBE

Topological insulators (TIs) are exotic materials which have topologically protected states on the surface due to the strong spin-orbit coupling. However, a lack of ordered growth of TI thin films on amorphous dielectrics and/or insulators presents a challenge for applications of TI-junctions. We report the growth of topological insulator Bi2Se3 thin films on amorphous SiO2 by molecular beam epitaxy (MBE). To achieve the ordered growth of Bi2Se3 on amorphous surface, the formation of other phases at the interface is suppressed by Se passivation. Structural characterizations reveal that Bi2Se3 films are grown along the [001] direction with a good periodicity by van der Waals epitaxy mechanism. Weak anti-localization effect of Bi2Se3 films grown on amorphous SiO2 shows modulated electrical property by the gating response. Our approach for ordered growth of Bi2Se3 on amorphous dielectric surface presents considerable advantages for TI-junctions with amorphous insulator or dielectric thin films.

preprint2012arXiv

Strain-Induced Spin States in Atomically Ordered Cobaltites

Epitaxial strain imposed in complex oxide thin films by heteroepitaxy is recognized as a powerful tool for identifying new properties and exploring the vast potential of materials performance. A particular example is LaCoO3, a zero spin, nonmagnetic material in the bulk, whose strong ferromagnetism in a thin film remains enigmatic despite a decade of intense research. Here, we use scanning transmission electron microscopy complemented by X-ray and optical spectroscopy to study LaCoO3 epitaxial thin films under different strain states. We observed an unconventional strain relaxation behavior resulting in stripe-like, lattice modulated patterns, which did not involve uncontrolled misfit dislocations or other defects. The modulation entails the formation of ferromagnetically ordered sheets comprising intermediate or high spin Co3+, thus offering an unambiguous description for the exotic magnetism found in epitaxially strained LaCoO3 films. This observation provides a novel route to tailoring the electronic and magnetic properties of functional oxide heterostructures.

preprint2006arXiv

Magnetoelectric effects of nanoparticulate Pb(Zr0.52Ti0.48)O3-NiFe2O4 composite films

We fabricated Pb(Zr0.52Ti0.48)O3-NiFe2O4 composite films consisting of randomly dispersed NiFe2O4 nanoparticles in the Pb(Zr0.52Ti0.48)O3 matrix. The structural analysis revealed that the crystal axes of the NiFe2O4 nanoparticles are aligned with those of the ferroelectric matrix. The composite has good ferroelectric and magnetic properties. We measured the transverse and longitudinal components of the magnetoelectric voltage coefficient, which supports the postulate that the magnetoelectric effect comes from direct stress coupling between magnetostrictive NiFe2O4 and piezoelectric Pb(Zr0.52Ti0.48)O3 grains.