BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Mircea Dragoman

Mircea Dragoman contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciBiological Physics

Trust snapshot

Quick read

Trust 21 - Emerging
12works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

12 published item(s)

preprint2016arXiv

Memristive GaN ultrathin suspended membrane array

In this paper, we show that ultrathin GaN membranes having a thickness of 15 nm and planar dimensions of 12x184 microns act as memristive devices. This fact is due to the migration of the negatively charged deep traps, which form in the volume of the membrane during the fabrication process, towards the unoccupied surface states of the suspended membranes. The time constant of the migration process is of the order of tens of second and varies with the current or voltage sweep.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Room temperature nanostructured graphene transistors with high on-off ratio

We report the batch fabrication of graphene field-effect-transistors (GFETs) with nanoperforated graphene as channel. The transistors were cut and encapsulated. The encapsulated GFETs display saturation regions that can be tuned by modifying the top gate voltage, and have on/off ratios of up to 10^8 at room temperature. In addition, the nanoperforated GFETs display orders of magnitude higher photoresponses than any room-temperature graphene detector configurations that do not involve heterostructures with bandgap materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Room temperature on-wafer ballistic graphene field-effect-transistor with oblique double-gate

We have fabricated and measured ballistic graphene transistors with two oblique gates that can be independently biased. The gate lengths are about 38 nm and are separated by a distance of 30 nm, the tilting angle being of 45o with respect to source and drain electrodes distanced at 190 nm. Electric measurements reveal specific properties of ballistic carrier transport, i.e. nonlinear drain voltage-drain current dependence, showing a saturation region, and negative differential resistance at certain bias voltages, which cannot be explained without physical mechanisms related to ballistic transport. Tens of ballistic transistors, with very large transconductances, were fabricated on a chip cut from a 4 inch graphene wafer. Such double-gate transistor configurations can be used also as extremely efficient, state-of-the-art photodetectors.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Complementary memristive device based on a thin film of MoS2 monolayers

In this manuscript we demonstrate experimentally that a thin film of MoS2 monolayers formed by drop-casting on a gold interdigitated electrode on Si/SiO2 behaves like a complementary memristive device, which is a key device of future crossbar memories. The hysteretic behavior of this device is modulated by light in a spectral range expanding from UV up to IR. In contrast to previous complementary memristive devices based on complicated oxides heterostructures, this device has a simple fabrication procedure and can be controlled by light, in addition to electrical signals.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Enhanced architectures for room-temperature reversible logic gates in graphene

We show that reversible two- and three-input logic gates, among which we mention the universal Toffoli gate, can be implemented with three tilted gating electrodes patterned on a monolayer graphene flake. These low-dissipation gates are based on the unique properties of ballistic charge carriers in graphene, which induce the appearance of bandgaps in transmission for properly potential barriers. The enhanced architectures for reversible logic gate implementations proposed in this paper offer a remarkable design simplification in comparison to standard approaches based on field-effect transistor circuits and a potential high-frequency operation.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Negative differential resistance in graphene-based ballistic field effect transistor with oblique top gate

Negative differential resistance (NDR) with room temperature peak-valley-ratio of 8 has been observed in a ballistic field-effect-transistor (FET) based on graphene, having an oblique top gate. Graphene FETs with a top gate inclination angle of 45 degrees and a drain-source distance of 400 nm were fabricated on a chip cut from a 4 inch graphene wafer grown by CVD. From the 60 measured devices, NDR was observed only in the regions where the CVD graphene displays the Raman signature of defectless monolayers. In other specific positions on the wafer, where graphene quality was not high enough and the Raman signature indicated the presence of defects, the ballistic character of transport is lost and the graphene FETs display nonlinear drain-voltage dependences tuned by the top and back gate voltage.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Two-and three-qubit room-temperature graphene quantum gates

Proposed configurations for the implementation of graphene-based CNOT and Toffoli gates working at room temperature are presented. These two logic gates, essential for any quantum computing algorithm, involve ballistic Y junctions for qubit implementation, quantum interference for qubit interaction and oblique gates for optimizing the output, and can be fabricated using existing nanolitographical techniques. The proposed configurations of CNOT and Toffoli quantum logic gates are based on the very large mean-free-paths of carriers in graphene at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Microwave and millimeterwave electrical permittivity of graphene monolayer

The effective electrical permittivity of a graphene monolayer is experimentally investigated in the 5-40 GHz range, which encompasses the microwave and the lower part of millimeterwave spectrum. The measurements were carried out using a coupled coplanar waveguide placed over a graphene monolayer flake, which is deposited on Si/SiO2. In contrast to some initial predictions, the effective permittivity of the graphene monolayer is slightly decreasing in the above-mentioned frequency range and has an average value of 3.3.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Geometrical-induced rectification in two-dimensional ballistic nanodevices

The paper demonstrates that a two-dimensional ballistic nanodevice in which the electron gas satisfies either the Schroodinger equation (as in quantum wells in common semiconductor heterostructures) or the Dirac equation (as in graphene) is able to rectify an electric signal if the device has a non-uniform cross section, for instance a taper configuration. No p-n junctions or dissimilar electrodes are necessary for rectification.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Graphene radio: Detecting radiowaves with a single atom sheet

We present the experimental evidence of RF demodulation by a graphene monolayer embedded in a coplanar structure. The demodulator was tested in the frequency range from 100 MHz to 25 GHz using amplitude modulated input signals. An input power of 0 dBm (1 mW) was used which is the typical power emitted for short range wireless communication systems, such as Bluetooth. The graphene demodulator exhibits good signal response in the frequency range associated to industrial, scientific and medical (ISM) radio band (2.4 GHz).

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Time Flow in Graphene and Its Implications on the Cutoff Frequency of Ballistic Graphene Devices

This manuscript deals with time flow in ballistic graphene devices. It is commonly believed that in the ballistic regime the traversal time of carriers in gated graphene at normal incidence is just the ratio of the length of the device and the Fermi velocity. However, we show that the traversal time is much slower if the influence of metallic contacts on graphene is considered. Even the transmission at normal incidence becomes smaller than 1, contradicting yet another common belief. These unexpected effects are due to the transformation of Schrodinger electrons in the metallic contact into Dirac electrons in graphene and vice versa. As a direct consequence of these transformations, the ultimate performance of gated ballistic devices are much lower than expected, in agreement with experimental results.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Real-Time Detection of Deoxyribonucleic Acid Bases via their Negative Differential Conductance Signature

In this paper we present a method for the real-time detection of the bases of the deoxyribonucleic acid using their signatures in negative differential conductance measurements. The present methods of electronic detection of deoxyribonucleic acid bases are based on a statistical analysis because the electrical currents of the four bases are weak and do not differ significantly from one base to another. In contrast, we analyze a device that combines the accumulated knowledge in nanopore and scanning tunneling detection, and which is able to provide very distinctive electronic signatures for the four bases.

0 citations0 reviewsNo code linkedOpen access