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Adrian Dinescu

Adrian Dinescu contributes to research discovery and scholarly infrastructure.

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preprint2022arXiv

Parametric Excitation and Instabilities of Spin Waves driven by Surface Acoustic Waves

The parametric excitation of spin waves by coherent surface acoustic waves is demonstrated experimentally in metallic magnetic thin film structures. The involved magnon modes are analyzed with micro-focused Brillouin light scattering spectroscopy and complementary micromagnetic simulations combined with analytical modelling are used to determine the origin of the spin-wave instabilities. Depending on the experimental conditions, we observe spin-wave instabilities originating from different phonon-magnon and magnon-magnon scattering processes. Our results demonstrate that an efficient excitation of high amplitude, strongly nonlinear magnons in metallic ferromagnets is possible by surface acoustic waves, which opens novel ways to create micro-scaled nonlinear magnonic systems for logic and data processing that can profit from the high excitation efficiency of phonons using piezoelectricity.

preprint2016arXiv

Room temperature nanostructured graphene transistors with high on-off ratio

We report the batch fabrication of graphene field-effect-transistors (GFETs) with nanoperforated graphene as channel. The transistors were cut and encapsulated. The encapsulated GFETs display saturation regions that can be tuned by modifying the top gate voltage, and have on/off ratios of up to 10^8 at room temperature. In addition, the nanoperforated GFETs display orders of magnitude higher photoresponses than any room-temperature graphene detector configurations that do not involve heterostructures with bandgap materials.

preprint2016arXiv

Room temperature on-wafer ballistic graphene field-effect-transistor with oblique double-gate

We have fabricated and measured ballistic graphene transistors with two oblique gates that can be independently biased. The gate lengths are about 38 nm and are separated by a distance of 30 nm, the tilting angle being of 45o with respect to source and drain electrodes distanced at 190 nm. Electric measurements reveal specific properties of ballistic carrier transport, i.e. nonlinear drain voltage-drain current dependence, showing a saturation region, and negative differential resistance at certain bias voltages, which cannot be explained without physical mechanisms related to ballistic transport. Tens of ballistic transistors, with very large transconductances, were fabricated on a chip cut from a 4 inch graphene wafer. Such double-gate transistor configurations can be used also as extremely efficient, state-of-the-art photodetectors.

preprint2014arXiv

Negative differential resistance in graphene-based ballistic field effect transistor with oblique top gate

Negative differential resistance (NDR) with room temperature peak-valley-ratio of 8 has been observed in a ballistic field-effect-transistor (FET) based on graphene, having an oblique top gate. Graphene FETs with a top gate inclination angle of 45 degrees and a drain-source distance of 400 nm were fabricated on a chip cut from a 4 inch graphene wafer grown by CVD. From the 60 measured devices, NDR was observed only in the regions where the CVD graphene displays the Raman signature of defectless monolayers. In other specific positions on the wafer, where graphene quality was not high enough and the Raman signature indicated the presence of defects, the ballistic character of transport is lost and the graphene FETs display nonlinear drain-voltage dependences tuned by the top and back gate voltage.

preprint2013arXiv

Microwave and millimeterwave electrical permittivity of graphene monolayer

The effective electrical permittivity of a graphene monolayer is experimentally investigated in the 5-40 GHz range, which encompasses the microwave and the lower part of millimeterwave spectrum. The measurements were carried out using a coupled coplanar waveguide placed over a graphene monolayer flake, which is deposited on Si/SiO2. In contrast to some initial predictions, the effective permittivity of the graphene monolayer is slightly decreasing in the above-mentioned frequency range and has an average value of 3.3.