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Researcher profile

Minhao Zhang

Minhao Zhang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallComputation and Languagecond-mat.mtrl-sciphysics.app-phArtificial Intelligencephysics.atm-clus

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Published work

7 published item(s)

preprint2022arXiv

Charge Carrier Mediation and Ferromagnetism induced in MnBi6Te10 Magnetic Topological Insulators by antimony doping

A new kind of intrinsic magnetic topological insulators (MTI) MnBi2Te4 family have shed light on the observation of novel topological quantum effect such as quantum anomalous Hall effect (QAHE). However, the strong anti-ferromagnetic (AFM) coupling and high carrier concentration in the bulk hinder the practical applications. In closely related materials MnBi4Te7 and MnBi6Te10, the interlayer magnetic coupling is greatly suppressed by Bi2Te3 layer intercalation. However, AFM is still the ground state in these compounds. Here by magnetic and transport measurements, we demonstrate that Sb substitutional dopant plays a dual role in MnBi6Te10, which can not only adjust the charge carrier type and the concentration, but also induce the solid into a ferromagnetic (FM) ground state. AFM ground state region which is also close to the charge neutral point can be found in the phase diagram of Mn(SbxBi1-x)6Te10 when x ~ 0.25. An intrinsic FM-MTI candidate is thus demonstrated, and it may take a step further for the realization of high-quality and high-temperature QAHE and the related topological quantum effects in the future.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Crake: Causal-Enhanced Table-Filler for Question Answering over Large Scale Knowledge Base

Semantic parsing solves knowledge base (KB) question answering (KBQA) by composing a KB query, which generally involves node extraction (NE) and graph composition (GC) to detect and connect related nodes in a query. Despite the strong causal effects between NE and GC, previous works fail to directly model such causalities in their pipeline, hindering the learning of subtask correlations. Also, the sequence-generation process for GC in previous works induces ambiguity and exposure bias, which further harms accuracy. In this work, we formalize semantic parsing into two stages. In the first stage (graph structure generation), we propose a causal-enhanced table-filler to overcome the issues in sequence-modelling and to learn the internal causalities. In the second stage (relation extraction), an efficient beam-search algorithm is presented to scale complex queries on large-scale KBs. Experiments on LC-QuAD 1.0 indicate that our method surpasses previous state-of-the-arts by a large margin (17%) while remaining time and space efficiency. The code and models are available at https://github.com/AOZMH/Crake.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Fano Interference in a Single-Molecule Junction

Trends of miniaturized devices and quantum interference electronics lead to the long desire of Fano interference in single-molecule junctions, here, which is successfully demonstrated using the 2,7-di(4-pyridyl)-9,9'-spirobifluorene molecule with a long backbone group and a short side group. Experimentally, the two electrically coupled groups are found to contribute to two blurred degenerate points in the differential conductance mapping. This forms a characteristic non-centrosymmetric double-crossing feature, with distinct temperature response for each crossing. Theoretically, we describe the practical in-junction electron transmission using a new two-tunnelling-channel coupling model and obtain a working formula with a Fano term and a Breit-Wigner term. The formula is shown to provide a good fit for all the mapping data and their temperature dependence in three dimensions, identifying the Fano component. Our work thus forms a complete set of evidence of the Fano interference in a single-molecule junction induced by two-tunnelling-channel coupling transport. Density functional theory calculations are used to corroborate this new physics.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Experimental evidence on the dissipationless transport of chiral edge state of the high-field Chern insulator in MnBi2Te4 nanodevices

We demonstrate the dissipationless transport of the chiral edge state (CES) in the nanodevices of quantum anomalous Hall insulator candidate MnBi2Te4. The device presents a near-zero longitudinal resistance together with a quantized Hall plateau in excess of 0.97 h/e2 over a range of temperatures from very low up to the Neel temperature of 22 K. Each of four-probe nonlocal measurements gives near-zero resistance and two-probe measurements exhibit a plateau of +1 h/e2, while the results of three-probe nonlocal measurements depend on the magnetic field. This indicates non-dissipation as well as the chirality of the edge state. The CES shows three regimes of temperature dependence, i.e., well-preserved dissipationless transport below 6 K, variable range hopping while increasing the temperature and thermal activation at higher than 22 K. Even at the lowest temperature, a current of over 1.4 μA breaks the dissipationless transport. These form a complete set of evidences of the Chern insulator state in the MnBi2Te4 systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A Gd@C82-based single molecular electret device with switchable electrical polarization

Single molecular electrets exhibiting single molecule electric polarization switching have been long desired as a platform for extremely small non-volatile storage devices, although it is controversial because of the poor stability of single molecular electric dipoles. Here we study the single molecular device of GdC82, where the encapsulated Gd atom forms a charge center, and we have observed a gate controlled switching behavior between two sets of single electron transport stability diagrams. The switching is operated in a hysteresis loop with a coercive gate field of around 0.5Vnm. Theoretical calculations have assigned the two conductance diagrams to corresponding energy levels of two states that the Gd atom is trapped at two different sites of the C82 cage, which possess two different permanent electrical dipole orientations. The two dipole states are stabilized by the anisotropic energy and separated by a transition energy barrier of 70 meV. Such switching is then accessed to the electric field driven reorientation of individual dipole while overcoming the barriers by the coercive gate field, and demonstrates the creation of a single molecular electret.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Overview of the CCKS 2019 Knowledge Graph Evaluation Track: Entity, Relation, Event and QA

Knowledge graph models world knowledge as concepts, entities, and the relationships between them, which has been widely used in many real-world tasks. CCKS 2019 held an evaluation track with 6 tasks and attracted more than 1,600 teams. In this paper, we give an overview of the knowledge graph evaluation tract at CCKS 2019. By reviewing the task definition, successful methods, useful resources, good strategies and research challenges associated with each task in CCKS 2019, this paper can provide a helpful reference for developing knowledge graph applications and conducting future knowledge graph researches.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Experimental observation of the gate-controlled reversal of the anomalous Hall effect in the intrinsic magnetic topological insulator MnBi2Te4 device

Here we report the reserved anomalous Hall effect (AHE) in the 5-septuple-layer van der Waals device of the intrinsic magnetic topological insulator MnBi2Te4. By employing the top/bottom gate, a negative AHE loop gradually decreases to zero and changes to a reversed sign. The reversed AHE exhibits distinct coercive fields and temperature dependence from the previous AHE. It reaches the maximum inside the gap of the Dirac cone. The newly-seen reversed AHE is attributed to the competition of the intrinsic Berry curvature and the Dirac-gap enhanced extrinsic skew scattering. Its gate-controlled switching contributes a scheme for the topological spin field-effect transistors.

0 citations0 reviewsNo code linkedOpen access