BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Mingliang Tian

Mingliang Tian contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elquant-ph

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
12works
0followers
4topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

12 published item(s)

preprint2025arXiv

Interface-Controlled Antiferromagnetic Tunnel Junctions based on a metallic van der Waals A-type Antiferromagnet

Magnetic tunnel junctions (MTJs) are crucial components in high-performance spintronic devices. Traditional MTJs rely on ferromagnetic (FM) materials but significant improvements in speed and packing density could be enabled by exploiting antiferromagnetic (AFM) compounds instead. Here, we report all-collinear AFM tunnel junctions (AFMTJs) fabricated with van der Waals A-type AFM metal (Fe0.6Co0.4)5GeTe2 (FCGT) electrodes and nonmagnetic semiconducting WSe2 tunnel barriers. The AFMTJ heterostructure device achieves a tunneling magnetoresistance (TMR) ratio of up to 75% in response to magnetic field switching. Our results demonstrate that the TMR exclusively emerges in the AFM state of FCGT, rather than during the AFM-to-FM transition. By engineering FCGT electrodes with either even- or odd-layer configurations, volatile or non-volatile TMR could be selected, consistent with an entirely interfacial effect. TMR in the even-layer devices arose by Néel vector switching. In the odd-layer devices, TMR stemmed from interfacial spin-flipping. Experimental and theoretical analyses reveal a new TMR mechanism associated with interface-driven spin-polarized transport, despite the spin-independent nature of bulk FCGT. Our work demonstrates that collinear AFMTJs can provide comparable performance to conventional MTJs and introduces a new paradigm for AFM spintronics, in which the spin-dependent properties of AFM interfaces are harnessed.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

A phase transition driven by subtle distortion without broken symmetry on spin, charge and lattice in Layered LnCu4-δP2(Ln=Eu, Sr)

In the scenario of Landau phase transition theory in condensed matter physics, any thermal dynamic phase transition must be subject to some kind of broken symmetries, that are relative to its spin, charge, orbital and lattice. Here we report a rare phase transition at Tp ~120 K or 140 K in layered materials LnCu4-δP2 (Ln=Eu, Sr) driven by a subtle structural-distortion without any broken symmetry on charge, spin and lattice. The variations of the lattice parameters, (ΔLc/Lc) ~ 0.013% or 0.062%, verified by thermal expansion, is much less than that for a typical crystalline phase transition (~0.5-1%), but the significant anomaly in heat capacity provides clear evidence of its intrinsic nature of thermodynamic transition.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Current-Controlled Topological Magnetic Transformations in a Nanostructured Kagome Magnet

Topological magnetic charge Q is a fundamental parameter that describes the magnetic domains and determines their intriguing electromagnetic properties. The ability to switch Q in a controlled way by electrical methods allows for flexible manipulation of electromagnetic behavior in future spintronic devices. Here we report the room-temperature current-controlled topological magnetic transformations between Q = -1 skyrmions and Q = 0 stripes or type-II bubbles in a kagome crystal Fe$_3$Sn$_2$. We show that the reproducible and reversible skyrmion-bubble and skyrmion-stripe transformations can be achieved by tuning the density of nanosecond pulsed current of the order of ~10$^{10}$ A$^{-2}$. Further numerical simulations suggest that spin-transfer torque combined with Joule thermal heating effects determine the current-induced topological magnetic transformations.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Gate-tunable exchange bias effect in FePS3-Fe5GeTe2 van der Waals heterostructures

Electrical gate-manipulated exchange bias (EB) effect is a long-term goal for spintronics applications. Meanwhile, the emergence of van der Waals (vdW) magnetic heterostructures provides ideal platforms for the study of interlayer magnetic coupling. However, to date, the electrical gate-controlled EB effect has yet to be realized in vdW heterostructures. Here, for the first time, we realized electrically-controllable EB effects in a vdW antiferromagnetic (AFM)-ferromagnetic (FM) heterostructure, FePS3-Fe5GeTe2. For pristine FePS3-Fe5GeTe2 heterostructures, sizable EB effects can be generated due to the strong interface coupling, which also depend on the thickness of the ferromagnetic layers. By applying a solid protonic gate, the EB effects can be electrically tuned largely by proton intercalations and deintercalations. The EB field reaches up to 23% of the coercive field and the blocking temperature exceeds 50 K at Vg= -3.15 V. The proton intercalations not only tune the average magnetic exchange coupling, but also change the AFM configurations and transform the heterointerface between an uncompensated AFM-FM interface and a compensated AFM-FM interface. These alterations result in a dramatic modulation of the total interface exchange coupling and the resultant EB effects. The study is a significant step towards vdW heterostructure-based magnetic logic for future low-energy electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Layer-dependent interlayer antiferromagnetic spin reorientation in air-stable semiconductor CrSBr

Magnetic van der Waals (vdW) materials offer a fantastic platform to investigate and exploit rich spin configurations stabilized in reduced dimensions. One tantalizing magnetic order is the interlayer antiferromagnetism in A-type vdW antiferromagnet, which may be effectively modified by the magnetic field, stacking order and thickness scaling. However, atomically revealing the interlayer spin orientation in the vdW antiferromagnet is highly challenging, because most of the material candidates exhibit an insulating ground state or instability in ambient conditions. Here, we report the layer-dependent interlayer antiferromagnetic reorientation in air-stable semiconductor CrSBr using magnetotransport characterization and first-principles calculations. We reveal a pronounced odd-even layer effect of interlayer reorientation, which originates from the competitions among interlayer exchange, magnetic anisotropy energy and extra Zeeman energy of uncompensated magnetization. Furthermore, we quantitatively constructed the layer-dependent magnetic phase diagram with the help of a linear-chain model. Our work uncovers the layer-dependent interlayer antiferromagnetic reorientation engineered by magnetic field in the air-stable semiconductor, which could contribute to future vdW spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Magnetotransport due to conductivity fluctuations in non-magnetic ZrTe2 nanoplates

Transition metal dichalcogenides with nontrivial band structures exhibit various fascinating physical properties and have sparked intensively research interest. Here, we performed systematic magnetotransport measurements on mechanical exfoliation prepared ZrTe2 nanoplates. We revealed that the negative longitudinal magnetoresistivity observed at high field region in the presence of parallel electric and magnetic fields could stem from the conductivity fluctuations due to the excess Zr in the nanoplates. In addition, the parametric plot, the planar Hall resistivity as function of the in-plane anisotropic magnetoresistivity, has an ellipse-shaped pattern with shifted orbital center, which further strengthen the evidence for the conductivity fluctuations. Our work provides some useful insights into transport phenomena in topological materials.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Two-dimensional characterization of three-dimensional magnetic bubbles in Fe$_3$Sn$_2$ nanostructures

We report differential phase contrast scanning transmission electron microscopy (TEM) of nanoscale magnetic objects in Kagome ferromagnet Fe$_3$Sn$_2$ nanostructures. This technique can directly detect the deflection angle of a focused electron beam, thus allowing clear identification of the real magnetic structures of two magnetic objects including three-ring and complex arch-shaped vortices in Fe$_3$Sn$_2$ by Lorentz transmission electron microscopy imaging. Numerical calculations based on real material-specific parameters well reproduced the experimental results, showing that the magnetic objects can be attributed to integral magnetizations of two types of complex three-dimensional (3D) magnetic skyrmion bubbles with depth-modulated spin twisting. Magnetic configurations obtained using the high-resolution TEM are generally considered as two-dimensional (2D) magnetic objects previously. Our results imply the importance of the integral magnetizations of underestimated 3D magnetic structures in 2D TEM magnetic characterizations.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Electrical manipulation of skyrmions in a chiral magnet

Writing, erasing and computing are three fundamental operations required by any working electronic devices. Magnetic skyrmions could be basic bits in promising in emerging topological spintronic devices. In particular, skyrmions in chiral magnets have outstanding properties like compact texture, uniform size and high mobility. However, creating, deleting and driving isolated skyrmions, as prototypes of aforementioned basic operations, have been grand challenge in chiral magnets ever since the discovery of skyrmions, and achieving all these three operations in a single device is highly desirable. Here, by engineering chiral magnet Co$_8$Zn$_{10}$Mn$_2$ into the customized micro-devices for in-situ Lorentz transmission electron microscopy observations, we implement these three operations of skyrmions using nanosecond current pulses with a low a current density about $10^{10}$ A/m$^2$ at room temperature. A notched structure can create or delete magnetic skyrmions depending on the direction and magnitude of current pulses. We further show that the magnetic skyrmions can be deterministically shifted step-by-step by current pulses, allowing the establishment of the universal current-velocity relationship. These experimental results have immediate significance towards the skyrmion-based memory or logic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Angle-dependent magnetoresistance and its implications for Lifshitz transition in W2As3

Lifshitz transition represents a sudden reconstruction of Fermi surface structure, giving rise to anomalies in electronic properties of materials. Such a transition does not necessarily rely on symmetry-breaking and thus is topological. It holds a key to understand the origin of many exotic quantum phenomena, for example the mechanism of extremely large magnetoresistance (MR) in topological Dirac/Weyl semimetals. Here, we report studies of the angle-dependent MR (ADMR) and the thermoelectric effect in W2As3 single crystal. The compound shows a large unsaturated MR (of about 70000% at 4.2 K and 53 T). The most striking finding is that the ADMR significantly deforms from the horizontal dumbbell-like shape above 40 K to the vertical lotus-like pattern below 30 K. The window of 30-40 K also corresponds substantial changes in Hall effect, thermopower and Nernst coefficient, implying an abrupt change of Fermi surface topology. Such a temperature-induced Lifshitz transition results in a compensation of electron-hole transport and the large MR as well. We thus suggest that the similar method can be applicable in detecting a Fermi-surface change of a variety of quantum states when a direct Fermi-surface measurement is not possible.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Gate-Tuned Interlayer Coupling in van der Waals Ferromagnet Fe$_3$GeTe$_2$ Nanoflakes

The weak interlayer coupling in van der Waals (vdW) magnets has confined their application to two dimensional (2D) spintronic devices. Here, we demonstrate that the interlayer coupling in a vdW magnet Fe$_3$GeTe$_2$ (FGT) can be largely modulated by a protonic gate.With the increase of the protons intercalated among vdW layers,interlayer magnetic coupling increases.Because of the existence of antiferromagnetic layers in FGT nanoflakes, the increasing interlayer magnetic coupling induces exchange bias in protonated FGT nanoflakes. Most strikingly, a rarely seen zero-field cooled (ZFC) exchange bias with very large values (maximally up to 1.2 kOe) has been observed when higher positive voltages (Vg>4.36 V) are applied to the protonic gate, which clearly demonstrates that a strong interlayer coupling is realized by proton intercalation. Such strong interlayer coupling will enable a wider range of applications for vdW magnets.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Three-dimensional topological semimetal phase in layered TaNiTe5 probed by de Haas-van Alphen effect

Layered three-dimensional (3D) topological semimetals have attracted intensively attention due to the exotic phenomena and abundantly tunable properties. Here we report the experimental evidence for the 3D topological semimetal phase in layered material TaNiTe5 single crystals through quantum oscillations. Strong quantum oscillations have been observed with diamagnetism background in TaNiTe5. By analyzing the de Haas-van Alphen oscillations, multi-periodic oscillations were extracted, in content with magnetotransport measurements. Moreover, nontrivial "π" Berry phase with 3D Fermi surface is identified, indicating the topologically nontrivial feature in TaNiTe5. Additionally, we demonstrated the thin-layer of TaNiTe5 crystals is highly feasible by the mechanical exfoliation, which offers a platform to explore exotic properties in low dimensional topological semimetal and paves the way for potential applications in nanodevices.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Giant anomalous Nernst effect in the magnetic Weyl semimetal Co3Sn2S2

In ferromagnetic solids, even in absence of magnetic field, a transverse voltage can be generated by a longitudinal temperature gradient. This thermoelectric counterpart of the Anomalous Hall effect (AHE) is dubbed the Anomalous Nernst effect (ANE). Expected to scale with spontaneous magnetization, both these effects arise because of the Berry curvature at the Fermi energy. Here, we report the observation of a giant ANE in a newly-discovered magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$ crystal. Hall resistivity and Nernst signal both show sharp jumps at a threshold field and exhibit a clear hysteresis loop below the ferromagnetic transition temperature. The ANE signal peaks a maximum value of about 5 miuV/K which is comparable to the largest seen in any magnetic material. Moreover, the anomalous transverse thermoelectric conductivity becomes as large as about 10 A/K.m at 70 K, the largest in known semimetals. The observed ANE signal is much larger than what is expected according to the magnetization.

0 citations0 reviewsNo code linkedOpen access