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Mingjun Hu

Mingjun Hu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

3 published item(s)

preprint2020arXiv

A highly sensitive piezoresistive sensor based on MXene and polyvinyl butyral with a wide detection limit and low power consumption

As a new class of two-dimensional transition-metal carbide and carbonitride, MXene have been widely used in the energy storage, sensor, catalysis, electromagnetic interference shielding and other field. It is a challenge to simultaneously realize a sensor of extremely high sensitivity, wide detection limits, low power consumption and good mechanical stability. In this work, taking advantage of high conductivity of MXene and porous structure of polyvinyl butyral, a highly sensitive piezoresistive sensor was fabricated. The fabricated MXene/PVB-based sensor exhibits highly sensitive reliably with a factor of ~11.9 kPa^-1, ~1.15 kPa^-1 and ~0.20 kPa^-1 in the ranges of 31.2 Pa-312 Pa, 312 Pa- 62.4 kPa and 62.4 kPa-1248.4 kPa, respectively. The sensor has a wide detection range (~31.2 Pa to ~2.205 MPa), low detection limit (6.8 Pa), low detection voltage (0.1 mV), low power consumption (~3.6 * 10^-10 W), fast response time ( ~110 ms), as well as good mechanical stability (over 10,000 maximum-pressure cycles). Moreover, it is demonstrated that the sensor can detect subtle bending and release activities of human, including arterial pulses and voice signal, which is potentially suitable as a wide detection range, highly sensitive and low power consumption piezoresistive sensor. This work provides a new avenue to expand the application of MXene-based flexible pressure sensor in the field of wide sensing range and ultra-low power consumption.

preprint2020arXiv

Hydrogen Bond Interaction Promotes Flash Energy Transport at MXene-water Interface

There are emerging applications for photothermal conversion utilizing MXene, but the mechanism under these applications related interfacial energy migration from MXene to the attached surface layer is still unknown. In this paper, with comprehensive ultrafast studies, we reported the energy migration pathway from MXene (Ti3C2Tx) to local environment under plasmonic excitation. Our data found that in water, energy dissipation is divided into fast hydrogen bond mediated channel and slow lattice motion mediated channel.The experimental results suggest that in water, nearly 80% energy in MXene that gained from the photoexcitation quickly dissipates into surrounding water molecules within 7 ps as a hydrogen bond mediated fast channel, and the remaining energy vanishes with time constant ~100 ps as a lattice motion mediated slow channel. The fast energy migration would result in the prominent interfacial energy conductance 150-300 MW *m{-2}* K{-1} for MXene-water interface. Tuning the solvent into ethanol could both narrow the energy dissipation to 35% through the fast channel and slow down the thermal channel (400 ps). To gain the molecular insight, molecular dynamic results presented different solvents had significantly different H bond forming ability on MXene surface. Our results suggested that interfacial interaction is crucial for effective hydrogen bonds on MXene surface to channel the excitation dissipation, providing important insights into the photothermal applications with MXene.

preprint2012arXiv

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

The use of cavity to manipulate photon emission of quantum dots (QDs) has been opening unprecedented opportunities for realizing quantum functional nanophotonic devices and also quantum information devices. In particular, in the field of semiconductor lasers, QDs were introduced as a superior alternative to quantum wells to suppress the temperature dependence of the threshold current in vertical-external-cavity surface-emitting lasers (VECSELs). In this work, a review of properties and development of semiconductor VECSEL devices and QD laser devices is given. Based on the features of VECSEL devices, the main emphasis is put on the recent development of technological approach on semiconductor QD VECSELs. Then, from the viewpoint of both single QD nanolaser and cavity quantum electrodynamics (QED), a single-QD-cavity system resulting from the strong coupling of QD cavity is presented. A difference of this review from the other existing works on semiconductor VECSEL devices is that we will cover both the fundamental aspects and technological approaches of QD VECSEL devices. And lastly, the presented review here has provided a deep insight into useful guideline for the development of QD VECSEL technology and future quantum functional nanophotonic devices and monolithic photonic integrated circuits (MPhICs).