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Mingchu Tang

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cond-mat.mtrl-sci physics.app-ph physics.optics cond-mat.mes-hall cond-mat.other

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preprint2022arXiv

Measurement of the quantum-confined Stark effect in $InAs/In(Ga)As$ quantum dots with p-doped quantum dot barriers

The quantum-confined Stark effect in InAs/In(Ga)As quantum dots (QDs) using non-intentionally doped and p-doped QD barriers was investigated to compare their performance for use in optical modulators. The measurements indicate that the doped QD barriers lead to a better figure of merit $(FoM)$, defined as the ratio of the change in absorption $Δα$ for a reverse bias voltage swing to the loss at $1 V$ $α(1 V)$, $FoM=Δα/α(1 V)$. The improved performance is due to the absence of the ground-state absorption peak and an additional component to the Stark shift. Measurements indicate that p-doping the QD barriers can lead to more than a 3$\times$ increase in FoM modulator performance between temperatures of -73 $°$C to 100 $°$C when compared with the stack with NID QD barriers.

preprint2019arXiv

High performance waveguide uni-travelling carrier photodiode grown by solid source molecular beam epitaxy

The first waveguide coupled phosphide-based UTC photodiodes grown by Solid Source Molecular Beam Epitaxy (SSMBE) are reported in this paper. Metal Organic Vapour Phase Epitaxy (MOVPE) and Gas Source MBE (GSMBE) have long been the predominant growth techniques for the production of high quality InGaAsP materials. The use of SSMBE overcomes the major issue associated with the unintentional diffusion of zinc in MOVPE and gives the benefit of the superior control provided by MBE growth techniques without the costs and the risks of handling toxic gases of GSMBE. The UTC epitaxial structure contains a 300 nm n-InP collection layer and a 300 nm n++-InGaAsP waveguide layer. UTC-PDs integrated with Coplanar Waveguides (CPW) exhibit 3 dB bandwidth greater than 65 GHz and output RF power of 1.1 dBm at 100 GHz. We also demonstrate accurate prediction of the absolute level of power radiated by our antenna integrated UTCs, between 200 GHz and 260 GHz, using 3d full-wave modelling and taking the UTC-to-antenna impedance match into account. Further, we present the first optical 3d full-wave modelling of waveguide UTCs, which provides a detailed insight into the coupling between a lensed optical fibre and the UTC chip.

preprint2014arXiv

Design rules for dislocation filters

The efficacy of strained layer threading dislocation filter structures in single crystal epitaxial layers is evaluated using numerical modeling for (001) face-centred cubic materials, such as GaAs or Si(1-x)Ge(x), and (0001) hexagonal materials such as GaN. We find that threading dislocation densities decay exponentially as a function of the strain relieved, irrespective of the fraction of threading dislocations that are mobile. Reactions between threading dislocations tend to produce a population that is a balanced mixture of mobile and sessile in (001) cubic materials. In contrast, mobile threading dislocations tend to be lost very rapidly in (0001) GaN, often with little or no reduction in the immobile dislocation density. The capture radius for threading dislocation interactions is estimated to be approx. 40nm using cross section transmission electron microscopy of dislocation filtering structures in GaAs monolithically grown on Si. We find that the minimum threading dislocation density that can be obtained in any given structure is likely to be limited by kinetic effects to approx. 1.0e+04 to 1.0e+05 per square cm.