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Mingbo He

Mingbo He appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

3 published item(s)

preprint2020arXiv

High-performance Coherent Optical Modulators based on Thin-film Lithium Niobate Platform

The coherent transmission technology using digital signal processing and advanced modulation formats, is bringing networks closer to the theoretical capacity limit of optical fibres, the Shannon limit. The in-phase quadrature electro-optic modulator that encodes information on both the amplitude and the phase of light, is one of the underpinning devices for the coherent transmission technology. Ideally, such modulator should feature low loss, low drive voltage, large bandwidth, low chirp and compact footprint. However, these requirements have been only met on separate occasions. Here, we demonstrate integrated thin-film lithium niobate in-phase/quadrature modulators that fulfil these requirements simultaneously. The presented devices exhibit greatly improved overall performance (half-wave voltage, bandwidth and optical loss) over traditional lithium niobate counterparts, and support modulation data rate up to 320 Gbit s-1. Our devices pave new routes for future high-speed, energy-efficient, and cost-effective communication networks.

preprint2019arXiv

A Polarization-insensitive and High-speed Electro-optic Switch Based on a Hybrid Silicon and Lithium Niobate Platform

We propose and demonstrate a polarization-insensitive and high speed optical switch unit based on a silicon and lithium niobate hybrid integration platform. The presented device exhibits a sub nano-second switching time, low drive voltages of 4.97 V, and low power dissipation due to electrostatic operation. The measured polarization dependence loss was lower than 0.8 dB. The demonstrated optical switch could provide as a building block for polarization-insensitive and high-speed optical matrix switches.

preprint2019arXiv

Lithium Niobate Michelson Interferometer Modulator on Silicon-On-Insulator Platform

We propose and demonstrate a hybrid silicon and lithium niobate Michelson Interferometer Modulator (MIM) with enhanced modulation efficiency compared to a Mach-Zehnder modulator. The modulator is based on seamless integration of a high-contrast waveguide based on lithium niobate-a popular modulator material-with compact, low-loss silicon circuitry. The present device demonstrates a modulation efficiency as high as 1.2 Vcm and a low insertion loss of 3.3 dB. The 3dB electro-optic bandwidth is approximately 17.5 GHz. The optical eye diagrams, operating at 32 Gbit/s and 40 Gbit/s, with measured dynamic extinction ratios at 8 dB and 6.6 dB respectively. The present device avoids absorption loss and nonlinearity in conventional silicon modulators and demonstrates highest modulation efficiency in LN modulators, showing potential in future optical interconnects.