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Milad Khoshnegar contributes to research discovery and scholarly infrastructure.
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Published work
We present a first measurement of photon polarization entanglement from the biexciton to ground state cascade of a single InAsP quantum dot embedded in an InP nanowire. We observe a fidelity of 0.76(2) to a reference maximally entangled state as well as a concurrence of 0.57(6).
In this paper, a new method based on Greens function theory and Fourier transform analysis has been proposed for calculating band structure with high accuracy and low processing time. This method utilizes sampling of potential energy in some points of crystals unit cell with Dirac delta functions, then through lattice Fourier transform gives us a simple and applicable formula for most of nanostructures. Sampling of potential in a crystal lattice of any kind contains accurate approximation of actual potential energy of atoms in the crystal. The step forward regarding the method concentrated on two novel ideas, Firstly, the potential was sampled and approximated by delta functions spread over the unit cell. Secondly, the principal equation of lattice is translated into reciprocal lattice and resulted in a huge reduction of calculations. By this method, it is possible to extract the band structure of any one, two or three dimensional crystalline structure.
We investigate the effect of Cooper pair injection in shifting biexciton energy level of low-symmetry (C2v) quantum dots (QDs) exhibiting nontrivial fine structure splitting. Coupling QDs to the superconducting coherent state forms extra fine structures by intermixing the ground and biexcitonic states where spectroscopic separation of neutral exciton and biexciton can be diminished, yielding a system to be utilized in time reordering scheme. The separability of exciton and biexciton energy levels is ascribed to the corresponding direct, exchange and correlation energies calculated here through configuration interaction method. We demonstrate the possibility of enhancing photon entanglement concurrence via providing an energy coincidence for biexciton-exciton (XX \rightarrow X) and exciton-ground (X \rightarrow 0) emissions within the weak coupling regime.
A new method for calculation of band structure has been proposed based on the Green's function theory and local sampling. Potential energy in the Hamiltonian of Schrodinger's equation is approximated with a series of sampled Dirac delta functions weighted by appropriate factors. These factors are found from multipole expansion of atomic potentials in the crystal lattice, with considering effects such as screening. Fourier transform was then applied to describe the wave function in reciprocal space. Sampling can be uniform or non-uniform throughout space; however rate and interval optimization is essential. Theory was implemented for Silicon, Germanium and Graphene sheet individually, while results were compared with the ab-initio non-local pseudopotential (AINLPS) method. Also for Silicon, the pseudopotential used in orbital-free density functional theory (OF-DFT) was employed as a suitable sampling source. Phase variations of the dispersion formula are analyzed, introducing adapting parameters to improve compatibility with ab-initio results. Local analysis with low order truncation in real space, reduces implementation time while giving acceptable results.
In this paper, we present an envelope function analysis in order to design the emission spectra of a white quantum well light emitting diode. The nanometric heterostructure that we are dealing with is a multiple quantum well, consisting periods of three single quantum wells with various well thicknesses. With the aid of 6x6 Luttinger Hamiltonian, we employ the combination of two methods, k.p perturbation and transfer matrix method, to acquire electron and hole wavefunctions analytically. The envelope function approximation was considered to obtain these wavefunctions for a special basis set. While adjacent valence subbands have been studied exactly, the conduction bands are approximated as parabolic. The effect of Stokes shift has been also taken into account. The dipole moment matrix elements for interband atomic transitions are evaluated via correlation between electron and hole envelope functions, for both orthogonal polarizations. This has simplified the calculation of photoluminescence intensity. Spatial variations in hole/electron wavefunctions have been examined with the introduction of piezoelectric and spontaneous polarizations internal field. We theoretically establish the possibility of a highly efficient InGaN red emitter, resulting in a uniform luminescence in red, green and blue emissions from the while light emitting diode, through adjusting material composition, potential slope, and thickness.