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Researcher profile

Amin Eftekharian

Amin Eftekharian contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.supr-concond-mat.otherphysics.opticsquant-ph

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Published work

4 published item(s)

preprint2015arXiv

Stimulated quantum phase slips from weak electromagnetic radiations in superconducting nanowires

We study the rate of quantum phase slips in an ultranarrow superconducting nanowire exposed to weak electromagnetic radiations. The superconductor is in the dirty limit close to the superconducting-insulating transition, where fluxoids move in strong dissipation. We use a semiclassical approach and show that external radiation stimulates a significant enhancement in the probability of quantum phase slips. This can help to outline a new type of detector for microwave to submillimetre radiations based on stimulated quantum phase slip phenomenon.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Superconducting Nanowire Single Photon Detector on Diamond

Superconducting nanowire single photon detectors (SNSPDs) are fabricated directly on diamond substrates and their optical and electrical properties are characterized. Dark count performance and photon count rates are measured at varying temperatures for 1310nm and 632nm photons. The procedure to prepare diamond substrate surfaces suitable for the deposition and patterning of thin film superconducting layers is reported. Using this approach, diamond substrates with less than 300pm RMS surface roughness are obtained.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Reduced Dark Counts in Optimized Geometries for Superconducting Nanowire Single photon Detectors

We have experimentally compared the critical current, dark count rate and photo-response of 100nm wide superconducting nanowires with different bend designs. Enhanced critical current for nanowires with optimally rounded bends, and thus with no current crowding, are observed. Furthermore, we find that the optimally designed bend significantly reduces the dark counts without compromising the photo-response of the device. The results can lead to major improvements in superconducting nanowire single photon detectors.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Design of GaN White Light Emitting Diode through Envelope Function Analysis and Combined k.p-Transfer Matrix Method

In this paper, we present an envelope function analysis in order to design the emission spectra of a white quantum well light emitting diode. The nanometric heterostructure that we are dealing with is a multiple quantum well, consisting periods of three single quantum wells with various well thicknesses. With the aid of 6x6 Luttinger Hamiltonian, we employ the combination of two methods, k.p perturbation and transfer matrix method, to acquire electron and hole wavefunctions analytically. The envelope function approximation was considered to obtain these wavefunctions for a special basis set. While adjacent valence subbands have been studied exactly, the conduction bands are approximated as parabolic. The effect of Stokes shift has been also taken into account. The dipole moment matrix elements for interband atomic transitions are evaluated via correlation between electron and hole envelope functions, for both orthogonal polarizations. This has simplified the calculation of photoluminescence intensity. Spatial variations in hole/electron wavefunctions have been examined with the introduction of piezoelectric and spontaneous polarizations internal field. We theoretically establish the possibility of a highly efficient InGaN red emitter, resulting in a uniform luminescence in red, green and blue emissions from the while light emitting diode, through adjusting material composition, potential slope, and thickness.

0 citations0 reviewsNo code linkedOpen access