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Mikhail I. Vasilevskiy

Mikhail I. Vasilevskiy contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2021arXiv

Exciton-photon interactions in semiconductor nanocrystals: {radiative transitions, non-radiative processes,} and environment effects

In this review we discuss several fundamental processes taking place in semiconductor nanocrystals (quantum dots, QDs) when their electron subsystem interacts with electromagnetic (EM) radiation. The physical phenomena of light emission and EM energy transfer from a QD exciton to other electronic systems such as neighbouring nanocrystals and polarisable 3D (semi-infinite dielectric or metal) and 2D (graphene) materials are considered. The cases of direct (II-VI) and indirect (silicon) band gap semiconductors are compared. We also cover the relevant non-radiative mechanisms such as the Auger process, electron capture on dangling bonds and interaction with phonons. The emphasis is on explaining the underlying physics and illustrating it with calculated and experimental results in a comprehensive, tutorial manner.

preprint2020arXiv

Simulation of non-radiative energy transfer in photosynthetic systems using a quantum computer

Photosynthesis is an important and complex physical process in nature, whose comprehensive understanding would have many relevant industrial applications, for instance in the field of energy production. In this paper we propose a quantum algorithm for the simulation of the excitonic transport of energy, occurring in the first stage of the process of photosynthesis. The algorithm takes in account the quantum and environmental effects (pure-dephasing), influencing the quantum transport. We performed quantum simulations of such phenomena, for a proof of concept scenario, in an actual quantum computer the IBM Q, of 5 qubits. We validate the results with the Haken-Ströbl model and discuss the influence of environmental parameters on the efficiency of the energy transport.

preprint2019arXiv

Excitation of localized graphene plasmons by a metallic slit

In this paper we show that graphene surface plasmons can be excited when an electromagnetic wave packet impinges on a single metal slit covered with graphene. The excitation of the plasmons localized over the slit is revealed by characteristic peaks in the absorption spectrum. It is shown that the position of the peaks can be tuned either by the graphene doping level or by the dielectric function of the material filling the slit. The whole system forms the basis for a plasmonic sensor when the slit is filled with an analyte.

preprint2019arXiv

Exciton-polaritons of a 2D semiconductor layer in a cylindrical microcavity

We describe exciton-polariton modes formed by the interaction between excitons in a 2D layer of a transition metal dichalcogenide embedded in a cylindrical microcavity and the microcavity photons. For this, an expression for the excitonic susceptibility of a semiconductor disk placed in the symmetry plane perpendicular to the axis of the microcavity is derived. Semiclassical theory provides dispersion relations for the polariton modes, while the quantum-mechanical treatment of a simplified model yields the Hopfield coefficients, measuring the degree of exciton-photon mixing in the coupled modes. The density of states (DOS) and its projection onto the photonic and the excitonic subspaces are calculated taking monolayer MoS 2 embedded in a Si 3 N 4 cylinder as an example. The calculated results demonstrate a strong enhancement, for certain frequencies, of the total and local DOS (Purcell effect) caused by the presence of the 2D layer.