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Source author record

Mikael Östling

Mikael Östling appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-phcond-mat.stat-mechphysics.data-an

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Published work

10 published item(s)

preprint2020arXiv

Graphene ribbons with suspended masses as transducers in ultra-small nanoelectromechanical accelerometers

Nanoelectromechanical system (NEMS) sensors and actuators could be of use in the development of next generation mobile, wearable, and implantable devices. However, these NEMS devices require transducers that are ultra-small, sensitive and can be fabricated at low cost. Here, we show that suspended double-layer graphene ribbons with attached silicon proof masses can be used as combined spring-mass and piezoresistive transducers. The transducers, which are realized using processes that are compatible with large-scale semiconductor manufacturing technologies, can yield NEMS accelerometers that occupy at least two orders of magnitude smaller die area than conventional state-of-the-art silicon accelerometers.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Manufacture and Characterization of Graphene Membranes with Suspended Silicon Proof Masses for MEMS and NEMS Applications

Unparalleled strength, chemical stability, ultimate surface-to-volume ratio and excellent electronic properties of graphene make it an ideal candidate as a material for membranes in micro- and nanoelectromechanical systems (MEMS and NEMS). However, the integration of graphene into MEMS or NEMS devices and suspended structures such as proof masses on graphene membranes raises several technological challenges, including collapse and rupture of the graphene. We have developed a robust route for realizing membranes made of double-layer CVD graphene and suspending large silicon proof masses on membranes with high yields. We have demonstrated the manufacture of square graphene membranes with side lengths from 7 micro meter to 110 micro meter and suspended proof masses consisting of solid silicon cubes that are from 5 micro meter multiply 5 micro meter multiply 16.4 micro meter to 100 micro meter multiply 100 micro meter multiply 16.4 micro meter in size. Our approach is compatible with wafer-scale MEMS and semiconductor manufacturing technologies, and the manufacturing yields of the graphene membranes with suspended proof masses were greater than 90%, with more than 70% of the graphene membranes having more than 90% graphene area without visible defects. The graphene membranes with suspended proof masses were extremely robust and were able to withstand indentation forces from an atomic force microscope (AFM) tip of up to ~7000 nN. The measured resonance frequencies of the realized structures ranged from tens to hundreds of kHz, with quality factors ranging from 63 to 148. The proposed approach for the reliable and large-scale manufacture of graphene membranes with suspended proof masses will enable the development and study of innovative NEMS devices with new functionalities and improved performances.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Suspended graphene membranes with attached silicon proof masses as piezoresistive NEMS accelerometers

Graphene is an atomically thin material that features unique electrical and mechanical properties, which makes it an extremely promising material for future nanoelectromechanical systems (NEMS). Recently, basic NEMS accelerometer functionality has been demonstrated by utilizing piezoresistive graphene ribbons with suspended silicon proof masses. However, the proposed graphene ribbons have limitations regarding mechanical robustness, manufacturing yield and the maximum measurement current that can be applied across the ribbons. Here, we report on suspended graphene membranes that are fully-clamped at their circumference and that have attached silicon proof masses. We demonstrate their utility as piezoresistive NEMS accelerometers and they are found to be more robust, have longer life span and higher manufacturing yield, can withstand higher measurement currents and are able to suspend larger silicon proof masses, as compared to the previously graphene ribbon devices. These findings are an important step towards bringing ultra-miniaturized piezoresistive graphene NEMS closer towards deployment in emerging applications such as in wearable electronics, biomedical implants and internet of things (IoT) devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Percolation thresholds of two-dimensional continuum systems of rectangles [with erratum]

The present work introduces an efficient Monte Carlo algorithm for continuum percolation composed of randomly-oriented rectangles. By conducting extensive simulations, we report high precision percolation thresholds for a variety of homogeneous systems with different rectangle aspect ratios. This work verifies and extends the excluded area theory. It is confirmed that percolation thresholds are dominated by the average excluded areas for both homogeneous and heterogeneous rectangle systems (except for some special heterogeneous systems where the rectangle lengths differ too much from one another). In terms of the excluded areas, generalized formulae are proposed to effectively predict precise percolation thresholds for all these rectangle systems. This work is therefore helpful for both practical applications and theoretical studies concerning relevant systems. The Erratum addresses errors in our earlier paper "Percolation thresholds of two-dimensional continuum systems of rectangles" published in [Phys. Rev. E 88, 012101 (2013)].

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preprint2015arXiv

Bilayer Insulator Tunnel Barriers for Graphene-Based Vertical Hot-electron Transistors

Vertical graphene-based device concepts that rely on quantum mechanical tunneling are intensely being discussed in literature for applications in electronics and optoelectronics. In this work, the carrier transport mechanisms in semiconductor-insulator-graphene (SIG) capacitors are investigated with respect to their suitability as the electron emitter in vertical graphene base transistors (GBTs). Several dielectric materials as tunnel barriers are compared, including dielectric double layers. Using bilayer dielectrics, we experimentally demonstrate significant improvements in the electron injection current by promoting Fowler-Nordheim tunneling (FNT) and step tunneling (ST) while suppressing defect mediated carrier transports. High injected tunneling current densities approaching 10$^3$ A/cm$^2$ (limited by series resistance), and excellent current-voltage nonlinearity and asymmetry are achieved using a 1 nm-thick high quality dielectric, thulium silicate (TmSiO), as the first insulator layer, and titanium dioxide (TiO$_2$) as a high electron affinity second layer insulator. We also confirm the feasibility and effectiveness of our approach in a full GBT structure which shows dramatic improvement in the collector on-state current density with respect to the previously reported GBTs. The device design and the fabrication scheme have been selected with future CMOS process compatibility in mind. This work proposes a bilayer tunnel barrier approach as a promising candidate to be used in high performance vertical graphene-based tunneling devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Going Ballistic: Graphene Hot Electron Transistors

This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indicated potential for THz operation still hold true today, even with improved models that take non-idealities into account. Experimental results clearly demonstrate the basic functionality, with on/off current switching over several orders of magnitude, but further developments are required to exploit the full potential of the GBT device family. In particular, interfaces between graphene and semiconductors or dielectrics are far from perfect and thus limit experimental device integrity, reliability and performance.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Optimizing the Optical and Electrical Properties of Graphene Ink Thin Films by Laser-annealing

We demonstrate a facile fabrication technique for graphene-based transparent conductive films. Highly flat and uniform graphene films are obtained through the incorporation of an efficient laser annealing technique with one-time drop casting of high-concentration graphene ink. The resulting thin films are uniform and exhibit a transparency of more than 85% at 550 nm and a sheet resistance of about 30 kΩ/sq. These values constitute an increase of 45% in transparency, a reduction of surface roughness by a factor of four and a decrease of 70% in sheet resistance compared to unannealed films.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Resistive Graphene Humidity Sensors with Rapid and Direct Electrical Readout

We demonstrate humidity sensing using a change of electrical resistance of a single- layer chemical vapor deposited (CVD) graphene that is placed on top of a SiO2 layer on a Si wafer. To investigate the selectivity of the sensor towards the most common constituents in air, its signal response was characterized individually for water vapor (H2O), nitrogen (N2), oxygen (O2), and argon (Ar). In order to assess the humidity sensing effect for a range from 1% relative humidity (RH) to 96% RH, devices were characterized both in a vacuum chamber and in a humidity chamber at atmospheric pressure. The measured response and recovery times of the graphene humidity sensors are on the order of several hundred milliseconds. Density functional theory simulations are employed to further investigate the sensitivity of the graphene devices towards water vapor. Results from the interaction between the electrostatic dipole moment of the water and the impurity bands in the SiO2 substrate, which in turn leads to electrostatic doping of the graphene layer. The proposed graphene sensor provides rapid response direct electrical read out and is compatible with back end of the line (BEOL) integration on top of CMOS-based integrated circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

A Graphene-based Hot Electron Transistor

We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene. Transfer characteristics of the GBTs show ON/OFF current ratios exceeding 50.000.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

A Simple Route towards High-Concentration Surfactant-Free Graphene Dispersions

A simple solvent exchange method is introduced to prepare high-concentration and surfactant-free graphene liquid dispersion. Natural graphite flakes are first exfoliated into graphene in dimethylformamide (DMF). DMF is then exchanged by terpineol through distillation, relying on their large difference in boiling points. Graphene can then be concentrated thanks to the volume difference between DMF and terpineol. The concentrated graphene dispersions are used to fabricate transparent conductive thin films, which possess comparable properties to those prepared by more complex methods.

0 citations0 reviewsNo code linkedOpen access