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Sam Vaziri

Sam Vaziri appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-ph

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Published work

11 published item(s)

preprint2021arXiv

High-Specific-Power Flexible Transition Metal Dichalcogenide Solar Cells

Semiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirable band gaps and self-passivated surfaces. However, challenges such as Fermi-level pinning at the metal contact-TMD interface and the inapplicability of traditional doping schemes have prevented most TMD solar cells from exceeding 2% power conversion efficiency (PCE). In addition, fabrication on flexible substrates tends to contaminate or damage TMD interfaces, further reducing performance. Here, we address these fundamental issues by employing: 1) transparent graphene contacts to mitigate Fermi-level pinning, 2) $\rm{MoO}_\it{x}$ capping for doping, passivation and anti-reflection, and 3) a clean, non-damaging direct transfer method to realize devices on lightweight flexible polyimide substrates. These lead to record PCE of 5.1% and record specific power of $\rm{4.4\ W\,g^{-1}}$ for flexible TMD ($\rm{WSe_2}$) solar cells, the latter on par with prevailing thin-film solar technologies cadmium telluride, copper indium gallium selenide, amorphous silicon and III-Vs. We further project that TMD solar cells could achieve specific power up to $\rm{46\ W\,g^{-1}}$, creating unprecedented opportunities in a broad range of industries from aerospace to wearable and implantable electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity

Non-volatile resistive switching is demonstrated in memristors with nanocrystalline molybdenum disulfide (MoS$_2$) as the active material. The vertical heterostructures consist of silicon, vertically aligned MoS$_2$ and chrome / gold metal electrodes. Electrical characterizations reveal a bipolar and forming free switching process with stable retention for at least 2500 seconds. Controlled experiments carried out in ambient and vacuum conditions suggest that the observed resistive switching is based on hydroxyl ions (OH$^-$). These originate from catalytic splitting of adsorbed water molecules by MoS$_2$. Experimental results in combination with analytical simulations further suggest that electric field driven movement of the mobile OH$^-$ ions along the vertical MoS$_2$ layers influences the energy barrier at the Si/MoS$_2$ interface. The scalable and semiconductor production compatible device fabrication process used in this work offers the opportunity to integrate such memristors into existing silicon technology for future neuromorphic applications. The observed ion-based plasticity may be exploited in ionicelectronic devices based on TMDs and other 2D materials for memristive applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Bilayer Insulator Tunnel Barriers for Graphene-Based Vertical Hot-electron Transistors

Vertical graphene-based device concepts that rely on quantum mechanical tunneling are intensely being discussed in literature for applications in electronics and optoelectronics. In this work, the carrier transport mechanisms in semiconductor-insulator-graphene (SIG) capacitors are investigated with respect to their suitability as the electron emitter in vertical graphene base transistors (GBTs). Several dielectric materials as tunnel barriers are compared, including dielectric double layers. Using bilayer dielectrics, we experimentally demonstrate significant improvements in the electron injection current by promoting Fowler-Nordheim tunneling (FNT) and step tunneling (ST) while suppressing defect mediated carrier transports. High injected tunneling current densities approaching 10$^3$ A/cm$^2$ (limited by series resistance), and excellent current-voltage nonlinearity and asymmetry are achieved using a 1 nm-thick high quality dielectric, thulium silicate (TmSiO), as the first insulator layer, and titanium dioxide (TiO$_2$) as a high electron affinity second layer insulator. We also confirm the feasibility and effectiveness of our approach in a full GBT structure which shows dramatic improvement in the collector on-state current density with respect to the previously reported GBTs. The device design and the fabrication scheme have been selected with future CMOS process compatibility in mind. This work proposes a bilayer tunnel barrier approach as a promising candidate to be used in high performance vertical graphene-based tunneling devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Going Ballistic: Graphene Hot Electron Transistors

This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indicated potential for THz operation still hold true today, even with improved models that take non-idealities into account. Experimental results clearly demonstrate the basic functionality, with on/off current switching over several orders of magnitude, but further developments are required to exploit the full potential of the GBT device family. In particular, interfaces between graphene and semiconductors or dielectrics are far from perfect and thus limit experimental device integrity, reliability and performance.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene

Integration of graphene with Si microelectronics is very appealing by offering potentially a broad range of new functionalities. New materials to be integrated with Si platform must conform to stringent purity standards. Here, we investigate graphene layers grown on copper foils by chemical vapor deposition and transferred to silicon wafers by wet etch and electrochemical delamination methods with respect to residual sub-monolayer metallic contaminations. Regardless of the transfer method and associated cleaning scheme, time-of-flight secondary ion mass spectrometry and total reflection x-ray fluorescence measurements indicate that the graphene sheets are contaminated with residual metals (copper, iron) with a concentration exceeding 10$^{13}$ atoms/cm$^{2}$. These metal impurities appear to be partly mobile upon thermal treatment as shown by depth profiling and reduction of the minority charge carrier diffusion length in the silicon substrate. As residual metallic impurities can significantly alter electronic and electrochemical properties of graphene and can severely impede the process of integration with silicon microelectronics these results reveal that further progress in synthesis, handling, and cleaning of graphene is required on the way to its advanced electronic and optoelectronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Resistive Graphene Humidity Sensors with Rapid and Direct Electrical Readout

We demonstrate humidity sensing using a change of electrical resistance of a single- layer chemical vapor deposited (CVD) graphene that is placed on top of a SiO2 layer on a Si wafer. To investigate the selectivity of the sensor towards the most common constituents in air, its signal response was characterized individually for water vapor (H2O), nitrogen (N2), oxygen (O2), and argon (Ar). In order to assess the humidity sensing effect for a range from 1% relative humidity (RH) to 96% RH, devices were characterized both in a vacuum chamber and in a humidity chamber at atmospheric pressure. The measured response and recovery times of the graphene humidity sensors are on the order of several hundred milliseconds. Density functional theory simulations are employed to further investigate the sensitivity of the graphene devices towards water vapor. Results from the interaction between the electrostatic dipole moment of the water and the impurity bands in the SiO2 substrate, which in turn leads to electrostatic doping of the graphene layer. The proposed graphene sensor provides rapid response direct electrical read out and is compatible with back end of the line (BEOL) integration on top of CMOS-based integrated circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

A Comprehensive Graphene FET Model for Circuit Design

During the last years, Graphene based Field Effect Transistors (GFET) have shown outstanding RF performance; therefore, they have attracted considerable attention from the electronic devices and circuits communities. At the same time, analytical models that predict the electrical characteristics of GFETs have evolved rapidly. These models, however, have a complexity level that can only be handled with the help of a circuit simulator. On the other hand, analog circuit designers require simple models that enable them to carry out fast hand calculations, i.e., to create circuits using small-signal hybrid-π models, calculate figures of merit, estimate gains, pole-zero positions, etc. This paper presents a comprehensive GFET model that is simple enough for being used in hand-calculations during circuit design and at the same time it is accurate enough to capture the electrical characteristics of the devices in the operating regions of interest. Closed analytical expressions are provided for the drain current ID, small-signal transconductance gain gm, output resistance ro, and parasitic Vgs and Cgd. In addition, figures of merit such as intrinsic voltage gain AV, transconductance efficiency gm/ID, and transit frequency fT are presented. The proposed model has been compared to a complete analytical model and also to measured data available in current literature. The results show that the proposed model follows closely to both the complete analytical model and the measured data; therefore, it can be successfully applied in the design of GFET analog circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Static Non-linearity in Graphene Field Effect Transistors

The static linearity performance metrics of the GFET transconductor are studied and modeled. Closed expressions are proposed for second and third order harmonic distortion (HD2, HD3), second and third order intermodulation distortion (ΔIM2), ΔIM3), and second and third order intercept points (AIIP2, AIIP3). The expressions are validated through large-signal simulations using a GFET VerilogA analytical model and a commercial circuit simulator. The proposed expressions can be used during circuit design in order to predict the GFET biasing conditions at which linearity requirements are met.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

A Graphene-based Hot Electron Transistor

We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene. Transfer characteristics of the GBTs show ON/OFF current ratios exceeding 50.000.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

A Simple Route towards High-Concentration Surfactant-Free Graphene Dispersions

A simple solvent exchange method is introduced to prepare high-concentration and surfactant-free graphene liquid dispersion. Natural graphite flakes are first exfoliated into graphene in dimethylformamide (DMF). DMF is then exchanged by terpineol through distillation, relying on their large difference in boiling points. Graphene can then be concentrated thanks to the volume difference between DMF and terpineol. The concentrated graphene dispersions are used to fabricate transparent conductive thin films, which possess comparable properties to those prepared by more complex methods.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

RF Performance Projections of Graphene FETs vs. Silicon MOSFETs

A graphene field-effect-transistor (GFET) model calibrated with extracted device parameters and a commercial 65 nm silicon MOSFET model are compared with respect to their radio frequency behavior. GFETs slightly lag behind CMOS in terms of speed despite their higher mobility. This is counterintuitive, but can be explained by the effect of a strongly nonlinear voltage-dependent gate capacitance. GFETs achieve their maximum performance only for narrow ranges of VDS and IDS, which must be carefully considered for circuit design. For our parameter set, GFETs require at least μ = 3000 cm2 V-1 s-1 to achieve the same performance as 65 nm silicon MOSFETs.

0 citations0 reviewsNo code linkedOpen access