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Researcher profile

Mika A. Sillanpaa

Mika A. Sillanpaa contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallquant-phcond-mat.mtrl-scicond-mat.supr-con

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Published work

7 published item(s)

preprint2013arXiv

Micromanipulation transfer of membrane resonators for circuit optomechanics

A capacitive coupling between mechanical resonator and a microwave cavity enables readout and manipulation of the vibrations. We present a setup to carry out such experiments with aluminum membranes fabricated as stamps and transferred in place with micromanipulation. The membrane is held in place by van der Waals forces, and is supported by three microscopic points. We measure the lowest mechanical modes, and conclude the membrane vibrates as an essentially free-free resonator. Sliding clamping conditions are identified via a softening Duffing nonlinearity. The method will enable reduction of clamping losses, while maintaining a narrow vacuum gap for strong capacitive coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Dynamical Autler-Townes control of a phase qubit

Routers, switches, and repeaters are essential components of modern information-processing systems. Similar devices will be needed in future superconducting quantum computers. In this work we investigate experimentally the time evolution of Autler-Townes splitting in a superconducting phase qubit under the application of a control tone resonantly coupled to the second transition. A three-level model that includes independently determined parameters for relaxation and dephasing gives excellent agreement with the experiment. The results demonstrate that the qubit can be used as a ON/OFF switch with 100 ns operating time-scale for the reflection/transmission of photons coming from an applied probe microwave tone. The ON state is realized when the control tone is sufficiently strong to generate an Autler-Townes doublet, suppressing the absorption of the probe tone photons and resulting in a maximum of transmission.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Decoherence, Autler-Townes effect, and dark states in two-tone driving of a three-level superconducting system

We present a detailed theoretical analysis of a multi-level quantum system coupled to two radiation fields and subject to decoherence. We concentrate on an effect known from quantum optics as the Autler-Townes splitting, which has been recently demonstrated experimentally [M. A. Sillanpaa et al., Phys. Rev. Lett. 103, 193601 (2009)] in a superconducting phase qubit. In the three-level approximation, we derive analytical solutions and describe how they can be used to extract the decoherence rates and to account for the measurement data. Better agreement with the experiment can be obtained by extending this model to five levels. Finally, we investigate the stationary states created in the experiment and show that their structure is close to that of dark states.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Macroscopic quantum tunneling in nanoelectromechanical systems

The experimental observation of quantum phenomena in mechanical degrees of freedom is difficult, as the systems become linear towards low energies and the quantum limit, and thus reside in the correspondence limit. Here we investigate how to access quantum phenomena in flexural nanomechanical systems which are strongly deflected by a voltage. Near a metastable point, one can achieve a significant nonlinearity in the electromechanical potential at the scale of zero point energy. The system could then escape from the metastable state via macroscopic quantum tunneling (MQT). We consider two model systems suspended atop a voltage gate, namely, a graphene sheet, and a carbon nanotube. We find that the experimental demonstration of the phenomenon is currently possible but demanding, since the MQT crossover temperatures fall in the milli-Kelvin range. A carbon nanotube is suggested as the most promising system.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Accessing nanomechanical resonators via a fast microwave circuit

The measurement of micron-sized mechanical resonators by electrical techniques is difficult, because of the combination of a high frequency and a small mechanical displacement which together suppress the electromechanical coupling. The only electromagnetic technique proven up to the range of several hundred MHz requires the usage of heavy magnetic fields and cryogenic conditions. Here we show how, without the need of either of them, to fully electrically detect the vibrations of conductive nanomechanical resonators up to the microwave regime. We use the electrically actuated vibrations to modulate an LC tank circuit which blocks the stray capacitance, and detect the created sideband voltage by a microwave analyzer. We show the novel technique up to mechanical frequencies of 200 MHz. Finally, we estimate how one could approach the quantum limit of mechanical systems.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Charge sensitivity of the Inductive Single-Electron Transistor

We calculate the charge sensitivity of a recently demonstrated device where the Josephson inductance of a single Cooper-pair transistor is measured. We find that the intrinsic limit to detector performance is set by oscillator quantum noise. Sensitivity better than $10^{-6}$e$/\sqrt{\mathrm{Hz}}$ is possible with a high $Q$-value $\sim 10^3$, or using a SQUID amplifier. The model is compared to experiment, where charge sensitivity $3 \times 10^{-5}$e$/\sqrt{\mathrm{Hz}}$ and bandwidth 100 MHz are achieved.

0 citations0 reviewsNo code linkedOpen access
preprint2001arXiv

Titanium single electron transistor fabricated by electron-beam lithography

A new method to fabricate non-superconducting mesoscopic tunnel junctions by oxidation of Ti is presented. The fabrication process uses conventional electron beam lithography and shadow deposition through an organic resist mask. Superconductivity in Ti is suppressed by performing the deposition under a suitable background pressure. We demonstrate the method by making a single electron transistor which operated at $T < 0.4$ K and had a moderate charge noise of $2.5 \times 10^{-3}$ e/$\sqrt{\mathrm{Hz}}$ at 10 Hz. Based on nonlinearities in the current-voltage characteristics at higher voltages, we deduce the oxide barrier height of approximately 110 mV.

0 citations0 reviewsNo code linkedOpen access