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Researcher profile

Michael Rüsing

Michael Rüsing contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.app-phphysics.opticsquant-ph

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Published work

5 published item(s)

preprint2023arXiv

Hall mobilities and sheet carrier densities in a single LiNbO$_3$ conductive ferroelectric domain wall

For the last decade, conductive domain walls (CDWs) in single crystals of the uniaxial model ferroelectric lithium niobate (LiNbO$_3$, LNO) have shown to reach resistances more than 10 orders of magnitude lower as compared to the surrounding bulk, with charge carriers being firmly confined to sheets of a few nanometers in width. LNO thus currently witnesses an increased attention since bearing the potential for variably designing room-temperature nanoelectronic circuits and devices based on such CDWs. In this context, the reliable determination of the fundamental transport parameters of LNO CDWs, in particular the 2D charge carrier density $n_{2D}$ and the Hall mobility $μ_{H}$ of the majority carriers, are of highest interest. In this contribution, we present and apply a robust and easy-to-prepare Hall-effect measurement setup by adapting the standard 4-probe van-der-Pauw method to contact a single, hexagonally-shaped domain wall that fully penetrates the 200-$μ$m-thick LNO bulk single crystal. We then determine $n_{2D}$ and $μ_{H}$ for a set of external magnetic fields $B$ and prove the expected cosine-like angular dependence of the Hall voltage. Lastly, we present photo-Hall measurements of one and the same DW, by determining the impact of super-bandgap illumination on the 2D charge carrier density $n_{2D}$.

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preprint2022arXiv

Large Hall electron mobilities in head-to-head BaTiO$_3$-domain walls

Strongly charged head-to-head (H2H) domain walls (DWs) that are purposely engineered along the [110] crystallographic orientation into ferroelectric BaTiO$_3$ single crystals have been proposed as novel 2-dimensional electron gases (2DEGs) due to their significant domain wall conductivity (DWC). Here, we quantify these 2DEG properties through dedicated Hall-transport measurements in van-der-Pauw 4-point geometry at room temperature, finding the electron mobility to reach around 400~cm$^2$(Vs)$^{-1}$, while the 2-dimensional charge density amounts to ~7$\times$10$^3$cm$^{-2}$. We underline the necessity to take account of thermal and geometrical-misalignment offset voltages by evaluating the Hall resistance under magnetic-field sweeps, since otherwise dramatic errors of several hundred percent in the derived mobility and charge density values can occur. Apart from the specific characterization of the conducting BaTiO$_3$ DW, we propose the method as an easy and fast way to quantitatively characterize ferroic conducting DWs, complementary to previously proposed scanning-probe-based Hall-potential analyses.

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preprint2022arXiv

Tuning the domain wall conductivity in bulk lithium niobate by uniaxial stress

Conductive domain walls (CDWs) in insulating ferroelectrics have recently attracted considerable attention due to their unique topological, optical, and electronic properties, and offer potential applications such as in memory devices or re-writable circuitry. The electronic properties of domain walls (DWs) can be tuned by the application of strain, hence controlling the charge carrier density at DWs. In this work, we study the influence of uniaxial stress on the conductivity of DWs in the bulk single crystal lithium niobate (LiNbO$_3$). Using conductive atomic force microscopy (cAFM), we observe a large asymmetry in the conductivity of DWs, where only negatively screened walls, so called head-to-head DWs, are becoming increasingly conductive, while positively screened, tail-to-tails DWs, show a decrease in conductivity. This asymmetry of DW conductivity agrees with our theoretical model based on the piezoelectric effect. In addition, we observed that the current in the DW increases up to an order of magnitude for smaller compressive stresses of 100 MPa. This response of DWs remained intact for multiple stress cycles over 2 months, opening a path for future applications.

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preprint2020arXiv

Evidence of nonlinear diffusion in KTP waveguides

Integrated $χ^{(2)}$ devices are a widespread tool for the generation and manipulation of light fields, since they exhibit high efficiency, small footprint and the ability to interface them with fibre networks. Surprisingly many things are not fully understood until now, in particular the fabrication of structures in potassium titanyl phosphate (KTP). A thorough understanding of the fabrication process and analysis of spatial properties is crucial for the realization and the engineering of high efficiency devices for quantum applications. In this paper we present our studies on rubidium-exchanged waveguides fabricated in KTP. Employing energy dispersive X-ray spectroscopy (EDX), we analysed a set of waveguides fabricated with different production parameters in terms of time and temperature. We find that the waveguide depth is dependent on their widths by reconstructing the waveguide depth profiles. Narrower waveguides are deeper, contrary to the theoretical model usually employed. Moreover, we found that the variation of the penetration depth with the waveguide width is stronger at higher temperatures and times. We attribute this behaviour to stress-induced variation in the diffusion process.

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preprint2019arXiv

Entangled photon-pair generation in periodically-poled thin-film lithium niobate waveguides

We report measurements of time-frequency entangled photon pairs and heralded single photons at telecommunications wavelengths, generated using a periodically-poled, lithium niobate on insulator (LNOI) waveguide pumped optically by a diode laser. We achieve a high Coincidences-to-Accidentals Ratio (CAR) at high pair brightness, a low value of the conditional self-correlation function [$g^{(2)}$(0)], and high two-photon energy-time Franson interferometric visibility, which demonstrate the high quality of the entangled photon pairs and heralded single photons.

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