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Elke Beyreuther

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cond-mat.mtrl-sci cond-mat.str-el physics.app-ph physics.acc-ph

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preprint2023arXiv

Hall mobilities and sheet carrier densities in a single LiNbO $_3$ conductive ferroelectric domain wall

For the last decade, conductive domain walls (CDWs) in single crystals of the uniaxial model ferroelectric lithium niobate (LiNbO $_3$ , LNO) have shown to reach resistances more than 10 orders of magnitude lower as compared to the surrounding bulk, with charge carriers being firmly confined to sheets of a few nanometers in width. LNO thus currently witnesses an increased attention since bearing the potential for variably designing room-temperature nanoelectronic circuits and devices based on such CDWs. In this context, the reliable determination of the fundamental transport parameters of LNO CDWs, in particular the 2D charge carrier density $n_{2D}$ and the Hall mobility $μ_{H}$ of the majority carriers, are of highest interest. In this contribution, we present and apply a robust and easy-to-prepare Hall-effect measurement setup by adapting the standard 4-probe van-der-Pauw method to contact a single, hexagonally-shaped domain wall that fully penetrates the 200- $μ$ m-thick LNO bulk single crystal. We then determine $n_{2D}$ and $μ_{H}$ for a set of external magnetic fields $B$ and prove the expected cosine-like angular dependence of the Hall voltage. Lastly, we present photo-Hall measurements of one and the same DW, by determining the impact of super-bandgap illumination on the 2D charge carrier density $n_{2D}$ .

preprint2022arXiv

Large Hall electron mobilities in head-to-head BaTiO $_3$ -domain walls

Strongly charged head-to-head (H2H) domain walls (DWs) that are purposely engineered along the [110] crystallographic orientation into ferroelectric BaTiO $_3$ single crystals have been proposed as novel 2-dimensional electron gases (2DEGs) due to their significant domain wall conductivity (DWC). Here, we quantify these 2DEG properties through dedicated Hall-transport measurements in van-der-Pauw 4-point geometry at room temperature, finding the electron mobility to reach around 400~cm $^2$ (Vs) $^{-1}$ , while the 2-dimensional charge density amounts to ~7 $\times$ 10 $^3$ cm $^{-2}$ . We underline the necessity to take account of thermal and geometrical-misalignment offset voltages by evaluating the Hall resistance under magnetic-field sweeps, since otherwise dramatic errors of several hundred percent in the derived mobility and charge density values can occur. Apart from the specific characterization of the conducting BaTiO $_3$ DW, we propose the method as an easy and fast way to quantitatively characterize ferroic conducting DWs, complementary to previously proposed scanning-probe-based Hall-potential analyses.

preprint2020arXiv

Spectral and spatial shaping of laser-driven proton beams using a pulsed high-field magnet beamline

Intense laser-driven proton pulses, inherently broadband and highly divergent, pose a challenge to established beamline concepts on the path to application-adapted irradiation field formation, particularly for 3D. Here we experimentally show the successful implementation of a highly efficient (50% transmission) and tuneable dual pulsed solenoid setup to generate a homogeneous (8.5% uniformity laterally and in depth) volumetric dose distribution (cylindrical volume of 5 mm diameter and depth) at a single pulse dose of 0.7 Gy via multi-energy slice selection from the broad input spectrum. The experiments have been conducted at the Petawatt beam of the Dresden Laser Acceleration Source Draco and were aided by a predictive simulation model verified by proton transport studies. With the characterised beamline we investigated manipulation and matching of lateral and depth dose profiles to various desired applications and targets. Using a specifically adapted dose profile, we successfully performed first proof-of-concept laser-driven proton irradiation studies of volumetric in-vivo normal tissue (zebrafish embryos) and in-vitro tumour tissue (SAS spheroids) samples.

preprint2014arXiv

Conductivity and magnetoresistance of La $_{0.7}$ Ce $_{0.3}$ MnO $_3$ thin films under photoexcitation

La $_{0.7}$ Ce $_{0.3}$ MnO $_3$ thin films of different thicknesses, degrees of CeO $_2$ -phase segregation and oxygen deficiency, grown on SrTiO $_3$ single crystal substrates, were comparatively investigated with respect to both their spectral and temperature-dependent photoconductivity (PC) and their magnetoresistance (MR) behaviour under photoexcitation. While as-grown films were insensitive to optical excitation, oxygen reduction appeared to be an effective way to decrease the film resistance, but the film thickness was found to play a minor role. However, from the evaluation of the spectral behaviour of the PC and the comparison of the MR of the LCeMO/substrate-samples with a bare substrate under illumination we find that the photoconductivity data reflects not only contributions from (i) photogenerated charge carriers in the film and (ii) carriers injected from the photoconductive substrate (as concluded from earlier works), but also (iii) a decisive parallel photoconduction in the SrTiO $_3$ substrate. Furthermore -- also by analyzing the MR characteristics -- the unexpected occurence of a strong electroresistive effect in the sample with the highest degree of CeO $_2$ segregation and oxygen deficiency could be attributed to the electroresistance of the SrTiO $_3$ substrate as well. The results suggest a critical reconsideration and possibly a reinterpretation of several previous photoconductivity and electroresistance investigations of manganite thin films on SrTiO $_3$ .

preprint2014arXiv

Electrical-transport characteristics of as-grown and oxygen-reduced La $_{0.7}$ Ce $_{0.3}$ MnO $_3$ films: calculation of hopping energies, Mn valences, and carrier localization lengths

Presently, cerium-doped LaMnO $_3$ is vividly discussed as an electron-doped counterpart prototype to the well-established hole-doped mixed-valence manganites. Here, La $_{0.7}$ Ce $_{0.3}$ MnO $_3$ thin films of different thicknesses, degrees of CeO $_2$ phase segregation, and oxygen deficiency, grown on SrTiO $_3$ single crystal substrates, are compared with respect to their resistance-vs.-temperature (R vs. T) behavior from 300~K down to 90~K. While the variation of the film thickness (and thus the degree of epitaxial strain) in the range between 10~nm and 100~nm has only a weak impact on the electrical transport, the degree of oxygen deficiency as well as the existence of CeO $_2$ clusters can completely change the type of hopping mechanism. This is shown by fitting the respective \textit{R-T} curves with three different transport models (adiabatic polaron hopping, Mott variable-range hopping, Efros-Shklovskii variable-range hopping), which are commonly used for the mixed-valence manganites. Several characteristic transport parameters, such as the hopping energies, the carrier localization lengths, as well as the Mn valences are derived from the fitting procedures.

preprint2013arXiv

Conducting and insulating LaAlO $_3$ /SrTiO $_3$ interfaces: A comparative surface photovoltage investigation

Surface photovoltage (SPV) spectroscopy, which is a versatile method to analyze the energetic distribution of electronic defect states at surfaces and interfaces of wide-bandgap semiconductor (hetero-)structures, is applied to comparatively investigate heterostructures made of 5-unit-cell-thick LaAlO $_3$ films grown either on TiO $_2$ - or on SrO-terminated SrTiO $_3$ . As shown in a number of experimental and theoretical investigations in the past, these two interfaces exhibit dramatically different properties with the first being conducting and the second insulating. Our present SPV investigation reveals clearly distinguishable interface defect state distributions for both configurations when interpreted within the framework of a classical semiconductor band scheme. Furthermore, bare SrTiO $_3$ crystals with TiO $_2$ or mixed SrO/TiO $_2$ terminations show similar SPV spectra and transients as do LaAlO $_3$ -covered samples with the respective termination of the SrTiO $_3$ substrate. This is in accordance with a number of recent works that stress the decisive role of SrTiO $_3$ and the minor role of LaAlO $_3$ with respect to the electronic interface properties.

preprint2013arXiv

Mn $^{2+}$ /Mn $^{3+}$ state of La $_{0.7}$ Ce $_{0.3}$ MnO $_3$ by oxygen reduction and photodoping

Films of cerium-doped LaMnO $_3$ , which has been intensively discussed as an electron-doped counterpart to hole-doped mixed-valence lanthanum manganites during the past decade, were analyzed by x-ray photoemission spectroscopy with respect to their manganese valence under photoexcitation. The comparative analysis of the Mn 3s exchange splitting of La $_{0.7}$ Ce $_{0.3}$ MnO $_3$ (LCeMO) films in the dark and under illumination clearly shows that both oxygen reduction and illumination are able to decrease the Mn valence towards a mixed 2 $+$ /3 $+$ state, independently of the film thickness and the degree of CeO $_2$ segregation. Charge injection from the photoconductive SrTiO $_3$ substrate into the Mn e $_g$ band with carrier lifetimes in the range of tens of seconds and intrinsic generation of electron-hole pairs within the films are discussed as two possible sources of the Mn valence shift and the subsequent electron doping.

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Elke Beyreuther

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7 publications

Hall mobilities and sheet carrier densities in a single LiNbO $_3$ conductive ferroelectric domain wall

Large Hall electron mobilities in head-to-head BaTiO $_3$ -domain walls

Spectral and spatial shaping of laser-driven proton beams using a pulsed high-field magnet beamline

Conductivity and magnetoresistance of La $_{0.7}$ Ce $_{0.3}$ MnO $_3$ thin films under photoexcitation

Electrical-transport characteristics of as-grown and oxygen-reduced La $_{0.7}$ Ce $_{0.3}$ MnO $_3$ films: calculation of hopping energies, Mn valences, and carrier localization lengths

Conducting and insulating LaAlO $_3$ /SrTiO $_3$ interfaces: A comparative surface photovoltage investigation

Mn $^{2+}$ /Mn $^{3+}$ state of La $_{0.7}$ Ce $_{0.3}$ MnO $_3$ by oxygen reduction and photodoping

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Elke Beyreuther

Research overview

Is this your work?

7 publications

Hall mobilities and sheet carrier densities in a single LiNbO3_33​ conductive ferroelectric domain wall

Large Hall electron mobilities in head-to-head BaTiO3_33​-domain walls

Spectral and spatial shaping of laser-driven proton beams using a pulsed high-field magnet beamline

Conductivity and magnetoresistance of La0.7_{0.7}0.7​Ce0.3_{0.3}0.3​MnO3_33​ thin films under photoexcitation

Electrical-transport characteristics of as-grown and oxygen-reduced La0.7_{0.7}0.7​Ce0.3_{0.3}0.3​MnO3_33​ films: calculation of hopping energies, Mn valences, and carrier localization lengths

Conducting and insulating LaAlO3_33​/SrTiO3_33​ interfaces: A comparative surface photovoltage investigation

Mn2+^{2+}2+/Mn3+^{3+}3+ state of La0.7_{0.7}0.7​Ce0.3_{0.3}0.3​MnO3_33​ by oxygen reduction and photodoping

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Hall mobilities and sheet carrier densities in a single LiNbO $_3$ conductive ferroelectric domain wall

Large Hall electron mobilities in head-to-head BaTiO $_3$ -domain walls

Conductivity and magnetoresistance of La $_{0.7}$ Ce $_{0.3}$ MnO $_3$ thin films under photoexcitation

Electrical-transport characteristics of as-grown and oxygen-reduced La $_{0.7}$ Ce $_{0.3}$ MnO $_3$ films: calculation of hopping energies, Mn valences, and carrier localization lengths

Conducting and insulating LaAlO $_3$ /SrTiO $_3$ interfaces: A comparative surface photovoltage investigation

Mn $^{2+}$ /Mn $^{3+}$ state of La $_{0.7}$ Ce $_{0.3}$ MnO $_3$ by oxygen reduction and photodoping