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Researcher profile

Michael M. Yee

Michael M. Yee contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.str-elcond-mat.mes-hallcond-mat.supr-con

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Published work

4 published item(s)

preprint2020arXiv

Consistency between ARPES and STM measurements on SmB$_6$

Strongly correlated topological surface states are promising platforms for next-generation quantum applications, but they remain elusive in real materials. The correlated Kondo insulator SmB$_6$ is one of the most promising candidates, with theoretically predicted heavy Dirac surface states supported by transport and scanning tunneling microscopy (STM) experiments. However, a puzzling discrepancy appears between STM and angle-resolved photoemission (ARPES) experiments on SmB$_6$. Although ARPES detects spin-textured surface states, their velocity is an order of magnitude higher than expected, while the Dirac point -- the hallmark of any topological system -- can only be inferred deep within the bulk valence band. A significant challenge is that SmB$_6$ lacks a natural cleavage plane, resulting in ordered surface domains limited to 10s of nanometers. Here we use STM to show that surface band bending can shift energy features by 10s of meV between domains. Starting from our STM spectra, we simulate the full spectral function as an average over multiple domains with different surface potentials. Our simulation shows excellent agreement with ARPES data, and thus resolves the apparent discrepancy between large-area measurements that average over multiple band-shifted domains and atomically-resolved measurements within a single domain.

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preprint2013arXiv

Imaging the Kondo Insulating Gap on SmB6

Topological insulators host spin-polarized surface states which robustly span the band gap and hold promise for novel applications. Recent theoretical predictions have suggested that topologically protected surface states may similarly span the hybridization gap in some strongly correlated heavy fermion materials, particularly SmB6. However, the process by which the Sm 4f electrons hybridize with the 5d electrons on the surface of SmB6, and the expected Fermi-level gap in the density of states out of which the predicted topological surface states must arise, have not been directly measured. We use scanning tunneling microscopy to conduct the first atomic resolution spectroscopic study of the cleaved surface of SmB6, and to reveal a robust hybridization gap which universally spans the Fermi level on four distinct surface morphologies despite shifts in the f band energy. Using a cotunneling model, we separate the density of states of the hybridized bands from which the predicted topological surface states must be disentangled. On all surfaces we observe residual spectral weight spanning the hybridization gap down to the lowest T, which is consistent with a topological surface state.

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preprint2013arXiv

Imaging the Nanoscale Band Structure of Topological Sb

Many promising building blocks of future electronic technology - including non-stoichiometric compounds, strongly correlated oxides, and strained or patterned films - are inhomogeneous on the nanometer length scale. Exploiting the inhomogeneity of such materials to design next-generation nanodevices requires a band structure probe with nanoscale spatial resolution. To address this demand, we report the first simultaneous observation and quantitative reconciliation of two candidate probes - Landau level spectroscopy and quasiparticle interference imaging - which we employ here to reconstruct the multi-component surface state band structure of the topological semimetal antimony(Sb). We thus establish the technique of band structure tunneling microscopy (BSTM), whose unique advantages include nanoscale access to non-rigid band structure deformation, empty state dispersion, and magnetic field dependent states. We use BSTM to elucidate the relationship between bulk conductivity and surface state robustness in topological materials, and to quantify essential metrics for spintronics applications.

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preprint2012arXiv

A quantum phase transition from triangular to stripe charge order in NbSe$_{2}$

The competition between proximate electronic phases produces a complex phenomenology in strongly correlated systems. In particular, fluctuations associated with periodic charge or spin modulations, known as density waves, may lead to exotic superconductivity in several correlated materials. However, density waves have been difficult to isolate in the presence of chemical disorder, and the suspected causal link between competing density wave orders and high temperature superconductivity is not understood. Here we use scanning tunneling microscopy to image a previously unknown unidirectional (stripe) charge density wave (CDW) smoothly interfacing with the familiar tri-directional (triangular) CDW on the surface of the stoichiometric superconductor NbSe$_2$. Our low temperature measurements rule out thermal fluctuations, and point to local strain as the tuning parameter for this quantum phase transition. We use this discovery to resolve two longstanding debates about the anomalous spectroscopic gap and the role of Fermi surface nesting in the CDW phase of NbSe$_2$. Our results highlight the importance of local strain in governing phase transitions and competing phenomena, and suggest a new direction of inquiry for resolving similarly longstanding debates in cuprate superconductors and other strongly correlated materials.

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