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Michael Lorenz

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4 publications

preprint2016arXiv

Fundamental absorption edges in heteroepitaxial YBiO3_3 thin films

The dielectric function of heteroepitaxial YBiO3_3 grown on aa-Al2_2O3_3 single crystals via pulsed laser deposition is determined in the spectral range from 0.03 eV to 4.5 eV by simultaneous modeling of spectroscopic ellipsometry and optical transmission data of YBiO3_3 films of different thickness. The (111)-oriented YBiO3_3 films are nominally unstrained and crystallize in a defective fluorite-type structure with Fm3ˉmFm\bar{3}m space group. From the calculated absorption spectrum, a direct electronic bandgap energy of 3.6(1) eV and the signature of an indirect electronic transition around 0.5 eV are obtained. These values provide necessary experimental feedback to previous conflicting electronic band structure calculations predicting either a topologically trivial or non-trivial insulating ground state in YBiO3_3.

preprint2015arXiv

Comparative Study of Optical and Magneto-Optical Properties of Normal, Disordered and Inverse Spinel Type Oxides

Co3_3O4_4, ZnFe2_2O4_4, CoFe2_2O4_4, ZnCo2_2O4_4, and Fe3_3O4_4 thin films were fabricated by pulsed laser deposition at high and low temperatures resulting in crystalline single-phase normal, inverse, as well as disordered spinel oxide thin films with smooth surface morphology. The dielectric function, determined by spectroscopic ellipsometry in a wide spectral range from 0.5 eV to 8.5 eV, is compared with the magneto-optical response of the dielectric tensor, investigated by magneto-optical Kerr effect (MOKE) spectroscopy in the spectral range from 1.7 eV to 5.5 eV with an applied magnetic field of 1.7 T. Crystal field, inter-valence and inter-sublattice charge transfer transitions, and transitions from O2p_{2p} to metal cation 3d or 4s bands are identified in both the principal diagonal elements and the magneto-optically active off-diagonal elements of the dielectric tensor. Depending on the degree of cation disorder, resulting in local symmetry distortion, the magneto-optical response is found to be strongest for high crystal quality inverse spinels and for disordered normal spinel structure, contrary to the first principle studies of CoFe2_2O4_4 and ZnFe2_2O4_4. The results presented provide a basis for deeper understanding of light-matter interaction in this material system that is of vital importance for device-related phenomena and engineering.

preprint2015arXiv

Electronic excitations and structure of Li2IrO3 thin films grown on ZrO2_{2}:Y (001) substrates

Thin films are a prerequisite for application of the emergent exotic ground states in iridates that result from the interplay of strong spin-orbit coupling and electronic correlations. We report on pulsed laser deposition of Li2_{2}IrO3_{3} films on ZrO2_{2}:Y(001) single crystalline substrates. X-ray diffraction confirms preferential (001) and (10-1) out-of-plane crystalline orientations with well defined in-plane orientation. Resistivity between 35 and 300 K is dominated by a three-dimensional variable range hopping mechanism. The dielectric function is determined by means of spectroscopic ellipsometry and, complemented by Fourier transform infrared transmission spectroscopy, reveals a small optical gap of ≈\approx 300 meV, a splitting of the 5d5d-t2gt_{2g} manifold, and several in-gap excitations attributed to phonons and possibly magnons.

preprint2013arXiv

Mott Variable Range Hopping and Weak Antilocalization Effect in Heteroepitaxial Na2IrO3 Thin Films

Iridate thin films are a prerequisite for any application utilizing their cooperative effects resulting from the interplay of stron spin-orbit coupling and electronic correlations. Here, heteroepitaxial Na2IrO3 thin films with excellent (001) out-of-plane crystalline orientation and well defined in-plane epitaxial relationship are presented on various oxide substrates. Resistivity is dominated by a three-dimensional variable range hopping mechanism in a large temperature range between 300 K and 40 K. Optical experiments show the onset of a small optical gap of about 200 meV and a splitting of the Ir 5d-t2g manifold. Positive magnetoresistance below 3 T and 25 K shows signatures of a weak antilocalization effect. This effect can be associated with surface states in a topological insulator and hence supports proposals for a topological insulator phase present in Na2IrO3.

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