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Researcher profile

Menno J. Kappers

Menno J. Kappers contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.opticscond-mat.mes-hallcond-mat.otherquant-ph

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Published work

6 published item(s)

preprint2026arXiv

Controlled epitaxy of room-temperature quantum emitters in gallium nitride

The ability to generate quantum light at room temperature on a mature semiconductor platform opens up new possibilities for quantum technologies. Heteroepitaxial growth of gallium nitride on silicon substrates offers the opportunity to leverage existing expertise and wafer-scale manufacturing to integrate bright quantum emitters in this material within cavities, diodes, and photonic circuits. Until now, it has only been possible to grow GaN QEs at uncontrolled depths on sapphire substrates, which is disadvantageous for potential device architectures. Here, we report a method to produce GaN QEs by metal-organic vapor phase epitaxy at a controlled depth in the crystal through the application of silane treatment and subsequent growth of 3D islands. We demonstrate this process on highly technologically relevant silicon substrates, producing room-temperature QEs with a high Debye Waller factor and strongly anti-bunched emission.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Polar InGaN/GaN quantum wells: Revisiting the impact of carrier localization on the green gap problem

We present a detailed theoretical analysis of the electronic and optical properties of c-plane InGaN/GaN quantum well structures with In contents ranging from 5% to 25%. Special attention is paid to the relevance of alloy induced carrier localization effects to the green gap problem. Studying the localization length and electron-hole overlaps at low and elevated temperatures, we find alloy-induced localization effects are crucial for the accurate description of InGaN quantum wells across the range of In content studied. However, our calculations show very little change in the localization effects when moving from the blue to the green spectral regime; i.e. when the internal quantum efficiency and wall plug efficiencies reduce sharply, for instance, the in-plane carrier separation due to alloy induced localization effects change weakly. We conclude that other effects, such as increased defect densities, are more likely to be the main reason for the green gap problem. This conclusion is further supported by our finding that the electron localization length is large, when compared to that of the holes, and changes little in the In composition range of interest for the green gap problem. Thus electrons may become increasingly susceptible to an increased (point) defect density in green emitters and as a consequence the nonradiative recombination rate may increase.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

We report on the optical characterization of non-polar a-plane InGaN quantum dots (QDs) grown by metal-organic vapor phase epitaxy using a short nitrogen anneal treatment at the growth temperature. Spatial and spectral mapping of sub-surface QDs have been achieved by cathodoluminescence at 8 K. Microphotoluminescence studies of the QDs reveal resolution limited sharp peaks with typical linewidth of 1 meV at 4.2 K. Time-resolved photoluminescence studies suggest the excitons in these QDs have a typical lifetime of 538 ps, much shorter than that of the c-plane QDs, which is strong evidence of the significant suppression of the internal electric fields.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

A full free spectral range tuning of p-i-n doped Gallium Nitride microdisk cavity

Effective, permanent tuning of the whispering gallery modes (WGMs) of p-i-n doped GaN microdisk cavity with embedded InGaN quantum dots over one free spectral range is successfully demonstrated by irradiating the microdisks with a ultraviolet laser (380nm) in DI water. For incident laser powers between 150 and 960 nW, the tuning rate varies linearly. Etching of the top surface of the cavity is proposed as the driving force for the observed shift in WGMs, and is supported by experiments. The tuning for GaN/InGaN microdisk cavities is an important step for deterministically realizing novel nanophotonic devices for studying cavity quantum electrodynamics.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Low threshold, room-temperature microdisk lasers in the blue spectral range

InGaN-based active layers within microcavity resonators offer the potential of low threshold lasers in the blue spectral range. Here we demonstrate optically pumped, room temperature lasing in high quality factor GaN microdisk cavities containing InGaN quantum dots (QDs) with thresholds as low as 0.28 mJ/cm2. This work, the first demonstration of lasing action from GaN microdisk cavities with QDs in the active layer, provides a critical step for the nitrides in realizing low threshold photonic devices with efficient coupling between QDs and an optical cavity.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Controlled tuning of whispering gallery modes of GaN/InGaN microdisk cavities

Controlled tuning of the whispering gallery modes of GaN/InGaN μ-disk cavities is demonstrated. The whispering gallery mode (WGM) tuning is achieved at room temperature by immersing the μ-disks in water and irradiating with ultraviolet (UV) laser. The tuning rate can be controlled by varying the laser excitation power, with a nanometer precision accessible at low excitation power (~ several μW). The selective oxidation mechanism is proposed to explain the results and supported by theoretical analysis. The tuning of WGMs in GaN/InGaN μ-disk cavities may have important implication in cavity quantum electrodynamics and the development of efficient light emitting devices.

0 citations0 reviewsNo code linkedOpen access