BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Medha Dandu

Medha Dandu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-phphysics.optics

Trust snapshot

Quick read

Trust 15 - UnverifiedVerification L1Unclaimed author
3works
0followers
4topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2022arXiv

Electrically Tunable Localized versus Delocalized Intralayer Moiré Excitons and Trions in a Twisted MoS$_2$ Bilayer

Moiré superlattice-induced sub-bands in twisted van der Waals homo- and hetero-structures govern their optical and electrical properties, rendering additional degrees of freedom such as twist angle. Here, we demonstrate the moiré superlattice effects on the intralayer excitons and trions in a twisted bilayer of MoS$_2$ of H-type stacking at marginal twist angles. We identify the emission from localized and multiple delocalized sub-bands of intralayer moiré excitons and show their electrical modulation by the corresponding trion formation. The electrical control of the oscillator strength of the moiré excitons also results in a strong tunability of resonant Raman scattering. We find that the gate-induced doping significantly modulates the electronic moiré potential, however leaves the excitonic moiré confinement unaltered. This effect, coupled with variable moiré trap filling by tuning the optical excitation density, allows us to delineate the different phases of localized and delocalized moiré trions. We demonstrate that the moiré excitons exhibit strong valley coherence that changes in a striking non-monotonic W-shape with gating due to motional narrowing. These observations from the simultaneous electrostatic control of quasiparticle-dependent moiré potential will lead to exciting effects of tunable many-body phenomena in moiré superlattices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De-pinning of van der Waals Contacts

Due to Fermi level pinning (FLP), metal-semiconductor contact interfaces result in a Schottky barrier height (SBH), which is usually difficult to tune. This makes it challenging to efficiently inject both electrons and holes using the same metal - an essential requirement for several applications, including light-emitting devices and complementary logic. Interestingly, modulating the SBH in the Schottky-Mott limit of de-pinned van der Waals (vdW) contacts becomes possible. However, accurate extraction of the SBH is essential to exploit such contacts to their full potential. In this work, we propose a simple technique to accurately estimate the SBH at the vdW contact interfaces by circumventing several ambiguities associated with SBH extraction. Using this technique on several vdW contacts, including metallic 2H-TaSe$_2$, semi-metallic graphene, and degenerately doped semiconducting SnSe$_2$, we demonstrate that vdW contacts exhibit a universal de-pinned nature. Superior ambipolar carrier injection properties of vdW contacts are demonstrated (with Au contact as a reference) in two applications, namely, (a) pulsed electroluminescence from monolayer WS$_2$ using few-layer graphene (FLG) contact, and (b) efficient carrier injection to WS$_2$ and WSe$_2$ channels in both nFET and pFET modes using 2H-TaSe$_2$ contact.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spectrally tunable, large Raman enhancement from nonradiative energy transfer in van der Waals heterostructure

Raman enhancement techniques are essential for fundamental studies in light-matter interactions and find widespread application in microelectronics, bio-chemical sensing, and clinical diagnosis. Two-dimensional (2D) materials and their van der Waals heterostructures (vdWHs) are emerging rapidly as potential platforms for Raman enhancement. Here, we experimentally demonstrate a new technique of Raman enhancement driven by nonradiative energy transfer (NRET) achieving a $10$-fold enhancement in the Raman intensity in a vertical vdWH comprising of a monolayer transition metal dichalcogenide (1L-TMD) placed on a multilayer SnSe\tsub2. Consequently, several weak Raman peaks become visible which are otherwise imperceptible. We also show a strong modulation of the enhancement factor by tuning the spectral overlap between the 1L-TMD and SnSe\tsub2 through temperature variation and the results are in remarkable agreement with a Raman polarizability model capturing the effect of NRET. The observed NRET driven Raman enhancement is a novel mechanism which has not been experimentally demonstrated thus far and is distinct from conventional surface (SERS), tip (TERS) or Interference enhanced Raman scattering (IERS) mechanisms that are driven solely by charge transfer or electric field enhancement. The mechanism can also be used in synergy with plasmonic nanostructures to achieve additional selectivity and sensitivity beyond hot spot engineering for applications like molecular detection using 2D/molecular hybrids. Our results open new avenues for engineering Raman enhancement techniques coupling the advantages of uniform enhancement accessible across a wide junction area in vertical vdWHs.

0 citations0 reviewsNo code linkedOpen access