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Researcher profile

Maxime Rondeau

Maxime Rondeau contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-ph

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Published work

3 published item(s)

preprint2021arXiv

Dynamic formation of spherical voids crossing linear defects

A predictive model for the evolution of porous Ge layer upon thermal treatment is reported. We represent an idealized etched dislocation core as an axially symmetric elongated hole and computed its dynamics during annealing. Numerical simulations of the shape change of a completely spherical void via surface diffusion have been performed. Simulations and experiments show individual large spherical voids, aligned along the dislocation core. The creation of voids could facilitate interactions between dislocations, enabling the dislocation network to change its connectivity in a way that facilitates the subsequent annihilation of dislocation segments. This confirms that thermally activated processes such as state diffusion of porous materials provide mechanisms whereby the defects are removed or arranged in configurations of lower energy. This model is intended to be indicative, and more detailed experimental characterization of process parameters such as annealing temperature and time, and could estimate the annealing time for given temperatures, or vice versa, with the right parameters.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Phase diagram of insulating crystal and quantum Hall states in ABC-stacked trilayer graphene

In the presence of a perpendicular magnetic field, ABC-stacked trilayer graphene&#39;s chiral band structure supports a 12-fold degenerate N=0 Landau level (LL). Along with the valley and spin degrees of freedom, the zeroth LL contains additional quantum numbers associated with the LL orbital index $% n=0,1,2$. Remote inter-layer hopping terms and external potential difference $Δ_{B}$ between the layers lead to LL splitting by introducing a gap $% Δ_{LL}$ between the degenerate zero-energy triplet LL orbitals. Assuming that the spin and valley degrees of freedom are frozen, we study the phase diagram of this system resulting from competition of the single particle LL splitting and Coulomb interactions within the Hartree-Fock approximation at integer filling factors. Above a critical value $Δ_{LL}^{c}$ of the external potential difference i,e, for $|Δ_{LL}| >Δ_{LL}^{c}$, the ground state is a uniform quantum Hall state where the electrons occupy the lowest unoccupied LL orbital index. For $|Δ_{LL}| <Δ_{LL}^{c}$ (which corresponds to large positive or negative values of $Δ_{B}$) the uniform QH state is unstable to the formation of a crystal state at integer filling factors. This phase transition should be characterized by a Hall plateau transition as a function of $Δ_{LL}$ at a fixed filling factor. We also study the properties of this crystal state and discuss its experimental detection.

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preprint2012arXiv

Quantum Hall to charge-density-wave phase transitions in ABC-trilayer graphene

ABC-stacked trilayer graphene&#39;s chiral band structure results in three ($n=0,1,2$) Landau level orbitals with zero kinetic energy. This unique feature has important consequences on the interaction driven states of the 12-fold degenerate (including spin and valley) N=0 Landau level. In particular, at many filling factors $ν_{T} =\pm5,\pm4,\pm2,\pm1$ a quantum phase transition from a quantum Hall liquid state to a triangular charge density wave occurs as a function of the single-particle induced LL orbital splitting $Δ_{LL}$. This phase transition should be characterized by a re-entrant integer quantum Hall effect with the Hall conductivity corresponding to the {\it adjacent} interaction driven integer quantum Hall plateau.

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