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Max Seifert

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cond-mat.mtrl-sci cond-mat.mes-hall physics.optics quant-ph

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preprint2014arXiv

Emergence of photoswitchable states in a graphene-azobenzene-Au platform

The perfect transmission of charge carriers through potential barriers in graphene (Klein tunneling) is a direct consequence of the Dirac equation that governs the low-energy carrier dynamics. As a result, localized states do not exist in unpatterned graphene, but quasi-bound states \emph{can} occur for potentials with closed integrable dynamics. Here, we report the observation of resonance states in photo-switchable self-assembled molecular(SAM)-graphene hybrid. Conductive AFM measurements performed at room temperature reveal strong current resonances, the strength of which can be reversibly gated \textit{on-} and \textit{off-} by optically switching the molecular conformation of the mSAM. Comparisons of the voltage separation between current resonances ($\sim 70$--$120$ mV) with solutions of the Dirac equation indicate that the radius of the gating potential is $\sim 7 \pm 2$ nm with a strength $\geq 0.5$ eV. Our results and methods might provide a route toward \emph{optically programmable} carrier dynamics and transport in graphene nano-materials.

preprint2014arXiv

Ultrafast electronic read-out of diamond NV centers coupled to graphene

Nonradiative transfer processes are often regarded as loss channels for an optical emitter1, since they are inherently difficult to be experimentally accessed. Recently, it has been shown that emitters, such as fluorophores and nitrogen vacancy centers in diamond, can exhibit a strong nonradiative energy transfer to graphene. So far, the energy of the transferred electronic excitations has been considered to be lost within the electron bath of the graphene. Here, we demonstrate that the trans-ferred excitations can be read-out by detecting corresponding currents with picosecond time resolution. We electrically detect the spin of nitrogen vacancy centers in diamond electronically and con-trol the nonradiative transfer to graphene by electron spin resonance. Our results open the avenue for incorporating nitrogen vacancy centers as spin qubits into ultrafast electronic circuits and for harvesting non-radiative transfer processes electronically.

preprint2013arXiv

Graphene transistors for bioelectronics

This paper provides an overview on graphene solution-gated field effect transistors (SGFETs) and their applications in bioelectronics. The fabrication and characterization of arrays of graphene SGFETs is presented and discussed with respect to competing technologies. To obtain a better understanding of the working principle of solution-gated transistors, the graphene-electrolyte interface is discussed in detail. The in-vitro biocompatibility of graphene is assessed by primary neuron cultures. Finally, bioelectronic experiments with electrogenic cells are presented, confirming the suitability of graphene to record the electrical activity of cells.

preprint2013arXiv

Low dimensionality of the diamond surface conductivity

Undoped diamond, a remarkable bulk electrical insulator, exhibits a high surface conductivity in air when the surface is hydrogen-terminated. Although theoretical models have claimed that a two-dimensional hole gas is established as a result of surface energy band bending, no definitive experimental demonstration has been reported so far. Here, we prove the two-dimensional character of the surface conductivity by low temperature characterization of diamond in-plane gated field-effect transistors that enable the lateral confinement of the transistor's drain-source channel to nanometer dimensions. In these devices, we observe Coulomb blockade effects of multiple quantum islands varying in size with the gate voltage. The charging energy and thus the size of these zero-dimensional islands exhibits a gate voltage dependence which is the direct result of the two-dimensional character of the conductive channel formed at hydrogen-terminated diamond surfaces.

preprint2011arXiv

High-Transconductance Graphene Solution-Gated Field Effect Transistors

In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially grown graphene on SiC as well as with chemical vapor deposition grown graphene on Cu exhibit high transconductances, which are a consequence of the high mobility of charge carriers in graphene and the large capacitance at the graphene/water interface. The performance of graphene SGFETs, in terms of gate sensitivity, is compared to other SGFET technologies and found to be clearly superior, confirming the potential of graphene SGFETs for sensing applications in electrolytic environments.