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Source author record

Jose A. Garrido

Jose A. Garrido appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-sciBiological PhysicsNeurons and Cognitionphysics.opticsquant-ph

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Published work

8 published item(s)

preprint2019arXiv

Velocity Saturation effect on Low Frequency Noise in short channel Single Layer Graphene FETs

Graphene devices for analog and RF applications are prone to Low Frequency Noise (LFN) due to its upconversion to undesired phase noise at higher frequencies. Such applications demand the use of short channel graphene transistors that operate at high electric fields in order to ensure a high speed. Electric field is inversely proportional to device length and proportional to channel potential so it gets maximized as the drain voltage increases and the transistor length shrinks. Under these conditions though, short channel effects like Velocity Saturation (VS) should be taken into account. Carrier number and mobility fluctuations have been proved to be the main sources that generate LFN in graphene devices. While their contribution to the bias dependence of LFN in long channels has been thoroughly investigated, the way in which VS phenomenon affects LFN in short channel devices under high drain voltage conditions has not been well understood. At low electric field operation, VS effect is negligible since carriers velocity is far away from being saturated. Under these conditions, LFN can be precicely predicted by a recently established physics-based analytical model. The present paper goes a step furher and proposes a new model which deals with the contribution of VS effect on LFN under high electric field conditions. The implemented model is validated with novel experimental data, published for the first time, from CVD grown back-gated single layer graphene transistors operating at gigahertz frequencies. The model accurately captures the reduction of LFN especially near charge neutrality point because of the effect of VS mechanism. Moreover, an analytical expression for the effect of contact resistance on LFN is derived. This contact resistance contribution is experimentally shown to be dominant at higher gate voltages and is accurately described by the proposed model.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Flexible graphene transistors for recording cell action potentials

Graphene solution-gated field-effect transistors (SGFETs) are a promising platform for the recording of cell action potentials due to the intrinsic high signal amplification of graphene transistors. In addition, graphene technology fulfils important key requirements for for in-vivo applications, such as biocompability, mechanical flexibility, as well as ease of high density integration. In this paper we demonstrate the fabrication of flexible arrays of graphene SGFETs on polyimide, a biocompatible polymeric substrate. We investigate the transistor's transconductance and intrinsic electronic noise which are key parameters for the device sensitivity, confirming that the obtained values are comparable to those of rigid graphene SGFETs. Furthermore, we show that the devices do not degrade during repeated bending and the transconductance, governed by the electronic properties of graphene, is unaffected by bending. After cell culture, we demonstrate the recording of cell action potentials from cardiomyocyte-like cells with a high signal-to-noise ratio that is higher or comparable to competing state of the art technologies. Our results highlight the great capabilities of flexible graphene SGFETs in bioelectronics, providing a solid foundation for in-vivo experiments and, eventually, for graphene-based neuroprosthetics.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Mapping brain activity with flexible graphene micro-transistors

Establishing a reliable communication interface between the brain and electronic devices is of paramount importance for exploiting the full potential of neural prostheses. Current microelectrode technologies for recording electrical activity, however, evidence important shortcomings, e.g. challenging high density integration. Solution-gated field-effect transistors (SGFETs), on the other hand, could overcome these shortcomings if a suitable transistor material were available. Graphene is particularly attractive due to its biocompatibility, chemical stability, flexibility, low intrinsic electronic noise and high charge carrier mobilities. Here, we report on the use of an array of flexible graphene SGFETs for recording spontaneous slow waves, as well as visually evoked and also pre-epileptic activity in vivo in rats. The flexible array of graphene SGFETs allows mapping brain electrical activity with excellent signal-to-noise ratio (SNR), suggesting that this technology could lay the foundation for a future generation of in vivo recording implants.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

THz-circuits driven by photo-thermoelectric graphene-junctions

For future on-chip communication schemes, it is essential to integrate nanoscale materials with an ultrafast optoelectronic functionality into high-frequency circuits. The atomically thin graphene has been widely demonstrated to be suitable for photovoltaic and optoelectronic devices because of its broadband optical absorption and its high electron mobility. Moreover, the ultrafast relaxation of photogenerated charge carriers has been verified in graphene. Here, we show that dual-gated graphene junctions can be functional parts of THz-circuits. As the underlying optoelectronic process, we exploit ultrafast photo-thermoelectric currents. We describe an immediate photo-thermoelectric current of the unbiased device following a femtosecond laser excitation. For a picosecond time-scale after the optical excitation, an additional photo-thermoelectric contribution shows up, which exhibits the fingerprint of a spatially inverted temperature profile. The latter can be understood by the different time-constants and thermal coupling mechanisms of the electron and phonon baths within graphene to the substrate and the metal contacts. The interplay of the processes gives rise to ultrafast electromagnetic transients in high-frequency circuits, and it is equally important for a fundamental understanding of graphene-based ultrafast photodetectors and switches.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Ultrafast electronic read-out of diamond NV centers coupled to graphene

Nonradiative transfer processes are often regarded as loss channels for an optical emitter1, since they are inherently difficult to be experimentally accessed. Recently, it has been shown that emitters, such as fluorophores and nitrogen vacancy centers in diamond, can exhibit a strong nonradiative energy transfer to graphene. So far, the energy of the transferred electronic excitations has been considered to be lost within the electron bath of the graphene. Here, we demonstrate that the trans-ferred excitations can be read-out by detecting corresponding currents with picosecond time resolution. We electrically detect the spin of nitrogen vacancy centers in diamond electronically and con-trol the nonradiative transfer to graphene by electron spin resonance. Our results open the avenue for incorporating nitrogen vacancy centers as spin qubits into ultrafast electronic circuits and for harvesting non-radiative transfer processes electronically.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Graphene transistors for bioelectronics

This paper provides an overview on graphene solution-gated field effect transistors (SGFETs) and their applications in bioelectronics. The fabrication and characterization of arrays of graphene SGFETs is presented and discussed with respect to competing technologies. To obtain a better understanding of the working principle of solution-gated transistors, the graphene-electrolyte interface is discussed in detail. The in-vitro biocompatibility of graphene is assessed by primary neuron cultures. Finally, bioelectronic experiments with electrogenic cells are presented, confirming the suitability of graphene to record the electrical activity of cells.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Low dimensionality of the diamond surface conductivity

Undoped diamond, a remarkable bulk electrical insulator, exhibits a high surface conductivity in air when the surface is hydrogen-terminated. Although theoretical models have claimed that a two-dimensional hole gas is established as a result of surface energy band bending, no definitive experimental demonstration has been reported so far. Here, we prove the two-dimensional character of the surface conductivity by low temperature characterization of diamond in-plane gated field-effect transistors that enable the lateral confinement of the transistor's drain-source channel to nanometer dimensions. In these devices, we observe Coulomb blockade effects of multiple quantum islands varying in size with the gate voltage. The charging energy and thus the size of these zero-dimensional islands exhibits a gate voltage dependence which is the direct result of the two-dimensional character of the conductive channel formed at hydrogen-terminated diamond surfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

High-Transconductance Graphene Solution-Gated Field Effect Transistors

In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially grown graphene on SiC as well as with chemical vapor deposition grown graphene on Cu exhibit high transconductances, which are a consequence of the high mobility of charge carriers in graphene and the large capacitance at the graphene/water interface. The performance of graphene SGFETs, in terms of gate sensitivity, is compared to other SGFET technologies and found to be clearly superior, confirming the potential of graphene SGFETs for sensing applications in electrolytic environments.

0 citations0 reviewsNo code linkedOpen access