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Researcher profile

Matthias C. Hoffmann

Matthias C. Hoffmann contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.otherphysics.opticsphysics.app-ph

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Published work

7 published item(s)

preprint2021arXiv

Ultrafast electron dynamics in platinum and gold thin films driven by optical and terahertz fields

We investigate the ultrafast electron dynamics triggered by terahertz and optical pulses in thin platinum and gold films by probing their transient optical reflectivity. The response of the platinum film to an intense terahertz pulse is similar to the optically-induced dynamics of both films and can be described by a two-temperature model. Surprisingly, gold can exhibit a much smaller terahertz pulse-induced reflectivity change and with opposite sign. For platinum, we estimate a 20% larger electron-phonon coupling for the terahertz-driven dynamics compared to the optically-induced one, which we ascribe to an additional nonthermal electron-phonon coupling contribution. We explain the remarkable response of gold to terahertz radiation with the field emission of electrons due the Fowler-Nordheim tunneling process, in samples with thickness below the structural percolation threshold where near-field enhancement is possible. Our results provide a fundamental insight into the ultrafast processes relevant to modern electro- and magneto-optical applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Enabling high repetition rate nonlinear THz science with a kilowatt-class sub-100 fs laser source

Manipulating the atomic and electronic structure of matter with strong terahertz (THz) fields while probing the response with ultrafast pulses at x-ray free electron lasers (FELs) has offered unique insights into a multitude of physical phenomena in solid state and atomic physics. Recent upgrades of x-ray FEL facilities are pushing to much higher repetition rates, enabling unprecedented signal to noise for pump probe experiments. This requires the development of suitable THz pump sources that are able to deliver intense pulses at compatible repetition rates. Here we present a high power laser-driven THz source based on optical rectification in LiNbO3 using tilted pulse front pumping. Our source is driven by a kilowatt-level Yb:YAG amplifier system operating at 100 kHz repetition rate and employing nonlinear spectral broadening and recompression to achieve sub-100 fs pulses at 1030 nm wavelength. We demonstrate a maximum of 144 mW average THz power (1.44 uJ pulse energy), consisting of single-cycle pulses centered at 0.6 THz with a peak electric field strength exceeding 150 kV/cm. These high field pulses open up a range of possibilities for nonlinear time-resolved experiments with x-ray probing at unprecedented rates.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Femtosecond X-ray magnetic circular dichroism absorption spectroscopy at an X-ray free electron laser

X-ray magnetic circular dichroism spectroscopy using an X-ray free electron laser is demonstrated with spectra over the Fe L$_{3,2}$-edges. This new ultrafast time-resolved capability is then applied to a fluence-dependent study of all-optical magnetic switching dynamics of Fe and Gd magnetic sublattices in a GdFeCo thin film above its magnetization compensation temperature. At the magnetic switching fuence, we corroborate the existence of a transient ferromagnetic-like state. The timescales of the dynamics, however, are longer than previously observed below the magnetization compensation temperature. Above and below the switching fluence range, we observe secondary demagnetization with about 5 ps timescales. This indicates that the spin thermalization takes longer than 5 ps.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Self-phase modulation of a single-cycle terahertz pulse by nonlinear free-carrier response in a semiconductor

We demonstrate the self-phase modulation (SPM) of a single-cycle THz pulse in a semiconductor, using bulk n-GaAs as a model system. The SPM arises from the heating of free electrons in the electric field of the THz pulse, leading to an ultrafast reduction of the plasma frequency, and hence to a strong modification of the THz-range dielectric function of the material. THz SPM is observed directly in the time domain. In the frequency domain it corresponds to a strong frequency-dependent refractive index nonlinearity of n-GaAs, found to be both positive and negative within the broad THz pulse spectrum, with the zero-crossing point defined by the electron momentum relaxation rate. We also observed the nonlinear spectral broadening and compression of the THz pulse.

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preprint2010arXiv

Semiconductor saturable absorbers for ultrafast THz signals

We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP and Ge in THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of semiconductors at high electron momentum states, due to conduction band nonparabolicity and scattering into satellite valleys in strong THz fields. Saturable absorber parameters, such as linear and non-saturable transmission, and saturation fluence, are extracted by fits to a classic saturable absorber model. Further, we observe THz pulse shortening, and an increase of the group refractive index of the samples at higher THz pulse peak fields.

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preprint2009arXiv

Observation of Nonequilibrium Carrier Distribution in Ge, Si and GaAs by Terahertz-pump--Terahertz-probe Measurements

We compare the observed strong saturation of the free carrier absorption in n-type semiconductors at 300 K in the terahertz frequency range when single-cycle pulses with intensities up to 150 MW/cm2 are used. In the case of germanium, a small increase of the absorption occurs at intermediate THz pulse energies. The recovery of the free carrier absorption was monitored by time-resolved THz-pump/THz-probe measurements. At short probe delay times, the frequency response of germanium cannot be fitted by the Drude model. We attribute these unique phenomena of Ge to dynamical overpopulation of the high mobility gamma conduction band valley.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Terahertz Kerr effect

We have observed optical birefringence in liquids induced by single-cycle THz pulses with field strengths exceeding 100 kV/cm. The induced change in polarization is proportional to the square of the THz electric field. The time-dependent THz Kerr signal is composed of a fast electronic response that follows the individual cycles of the electric field and a slow exponential response associated with molecular orientation.

0 citations0 reviewsNo code linkedOpen access