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Dmitry Turchinovich

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cond-mat.mtrl-sci cond-mat.mes-hall physics.optics cond-mat.other physics.chem-ph

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preprint2020arXiv

Grating-graphene metamaterial as a platform for terahertz nonlinear photonics

Nonlinear optics is an increasingly important field for scientific and technological applications, owing to its relevance and potential for optical and optoelectronic technologies. Currently, there is an active search for suitable nonlinear material systems with efficient conversion and small material footprint. Ideally, the material system should allow for chip-integration and room-temperature operation. Two-dimensional materials are highly interesting in this regard. Particularly promising is graphene, which has demonstrated an exceptionally large nonlinearity in the terahertz regime. Yet, the light-matter interaction length in two-dimensional materials is inherently minimal, thus limiting the overall nonlinear-optical conversion efficiency. Here we overcome this challenge using a metamaterial platform that combines graphene with a photonic grating structure providing field enhancement. We measure terahertz third-harmonic generation in this metamaterial and obtain an effective third-order nonlinear susceptibility with a magnitude as large as 3$\cdot$10$^{-8}$m$^2$/V$^2$, or 21 esu, for a fundamental frequency of 0.7 THz. This nonlinearity is 50 times larger than what we obtain for graphene without grating. Such an enhancement corresponds to third-harmonic signal with an intensity that is three orders of magnitude larger due to the grating. Moreover, we demonstrate a field conversion efficiency for the third harmonic of up to $\sim$1% using a moderate field strength of $\sim$30 kV/cm. Finally we show that harmonics beyond the third are enhanced even more strongly, allowing us to observe signatures of up to the 9$^{\rm th}$ harmonic. Grating-graphene metamaterials thus constitute an outstanding platform for commercially viable, CMOS compatible, room temperature, chip-integrated, THz nonlinear conversion applications.

preprint2019arXiv

Thickness-dependent electron momentum relaxation times in thin iron films

Terahertz time-domain conductivity measurements in 2 to 100 nm thick iron films resolve the femtosecond time delay between applied electric fields and resulting currents. This response time decreases for thinner metal films. The macroscopic response time depends on the mean and the variance of the distribution of microscopic momentum relaxation times of the conducting electrons. Comparing the recorded response times with DC-conductivities demonstrates increasing variance of the microscopic relaxation times with increasing film thickness. At least two electron species contribute to conduction in bulk with substantially differing relaxation times. The different electron species are affected differently by the confinement because they have different mean free paths.

preprint2016arXiv

Probing the Charge Separation Process on In2S3/Pt-TiO2 Nanocomposites for Boosted Visible-light Photocatalytic Hydrogen Production

A simple refluxing wet-chemical approach is employed for fabricating In2S3/Pt-TiO2 heterogeneous catalysts for hydrogen generation under visible light irradiation. When the mass ratio between Pt-TiO2 and cubic-phased In2S3 (denoted as In2S3/Pt-TiO2) is two, the composite catalyst shows the highest hydrogen production, which exhibits an 82-fold enhancement over in-situ deposited Pt-In2S3. UV-vis diffuse reflectance and valence band X-ray photoelectron spectra elucidate that the conduction band of In2S3 is 0.3 eV more negative compared to that of TiO2, favoring charge separation in the nanocomposites. Photoelectrochemical transient photo-current measurements and optical pump - terahertz probe spectroscopic studies further corroborate the charge separation in In2S3/Pt-TiO2. The migration of photo-induced electrons from the In2S3 conduction band to the TiO2 conduction band and subsequently into the Pt nanoparticles is found to occur within 5 picoseconds. Based on the experimental evidence, a charge separation process is proposed which accounts for the enhanced activity exhibited by the In2S3/Pt-TiO2 composite catalysts.

preprint2014arXiv

Competing Ultrafast Energy Relaxation Pathways in Photoexcited Graphene

For most optoelectronic applications of graphene a thorough understanding of the processes that govern energy relaxation of photoexcited carriers is essential. The ultrafast energy relaxation in graphene occurs through two competing pathways: carrier-carrier scattering -- creating an elevated carrier temperature -- and optical phonon emission. At present, it is not clear what determines the dominating relaxation pathway. Here we reach a unifying picture of the ultrafast energy relaxation by investigating the terahertz photoconductivity, while varying the Fermi energy, photon energy, and fluence over a wide range. We find that sufficiently low fluence ($\lesssim$ 4 $μ$J/cm$^2$) in conjunction with sufficiently high Fermi energy ($\gtrsim$ 0.1 eV) gives rise to energy relaxation that is dominated by carrier-carrier scattering, which leads to efficient carrier heating. Upon increasing the fluence or decreasing the Fermi energy, the carrier heating efficiency decreases, presumably due to energy relaxation that becomes increasingly dominated by phonon emission. Carrier heating through carrier-carrier scattering accounts for the negative photoconductivity for doped graphene observed at terahertz frequencies. We present a simple model that reproduces the data for a wide range of Fermi levels and excitation energies, and allows us to qualitatively assess how the branching ratio between the two distinct relaxation pathways depends on excitation fluence and Fermi energy.

preprint2012arXiv

Self-phase modulation of a single-cycle terahertz pulse by nonlinear free-carrier response in a semiconductor

We demonstrate the self-phase modulation (SPM) of a single-cycle THz pulse in a semiconductor, using bulk n-GaAs as a model system. The SPM arises from the heating of free electrons in the electric field of the THz pulse, leading to an ultrafast reduction of the plasma frequency, and hence to a strong modification of the THz-range dielectric function of the material. THz SPM is observed directly in the time domain. In the frequency domain it corresponds to a strong frequency-dependent refractive index nonlinearity of n-GaAs, found to be both positive and negative within the broad THz pulse spectrum, with the zero-crossing point defined by the electron momentum relaxation rate. We also observed the nonlinear spectral broadening and compression of the THz pulse.

preprint2010arXiv

Semiconductor saturable absorbers for ultrafast THz signals

We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP and Ge in THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of semiconductors at high electron momentum states, due to conduction band nonparabolicity and scattering into satellite valleys in strong THz fields. Saturable absorber parameters, such as linear and non-saturable transmission, and saturation fluence, are extracted by fits to a classic saturable absorber model. Further, we observe THz pulse shortening, and an increase of the group refractive index of the samples at higher THz pulse peak fields.