Ultra-sharp lateral junctions in modulation-doped graphene
We demonstrate ultra-sharp () lateral junctions in graphene using electronic transport, scanning tunneling microscopy, and first principles calculations. The junction lies at the boundary between differentially-doped regions of a graphene sheet, where one side is intrinsic and the other is charge-doped by proximity to a flake of -RuCl across a thin insulating barrier. We extract the junction contribution to the device resistance to place bounds on the junction width. We achieve an ultra-sharp junction when the boundary between the intrinsic and doped regions is defined by a cleaved crystalline edge of -RuCl located 2 nm from the graphene. Scanning tunneling spectroscopy in heterostructures of graphene, hexagonal boron nitride, and -RuCl shows potential variations on a sub-10 nm length scale. First principles calculations reveal the charge-doping of graphene decays sharply over just nanometers from the edge of the -RuCl flake.