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Researcher profile

Mathieu Luisier

Mathieu Luisier contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.comp-phcond-mat.dis-nnDistributed, Parallel, and Cluster ComputingEmerging TechnologiesPerformancephysics.app-ph

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Published work

9 published item(s)

preprint2026arXiv

Parallel Quadratic Selected Inversion in Quantum Transport Simulation

Driven by Moore's Law, the dimensions of transistors have been pushed down to the nanometer scale. Advanced quantum transport (QT) solvers are required to accurately simulate such nano-devices. The non-equilibrium Green's function (NEGF) formalism lends itself optimally to these tasks, but it is computationally very intensive, involving the selected inversion (SI) of matrices and the selected solution of quadratic matrix (SQ) equations. Existing algorithms to tackle these numerical problems are ideally suited to GPU acceleration, e.g., the so-called recursive Green's function (RGF) technique, but they are typically sequential, require block-tridiagonal (BT) matrices as inputs, and their implementation has been so far restricted to shared memory parallelism, thus limiting the achievable device sizes. To address these shortcomings, we introduce distributed methods that build on RGF and enable parallel selected inversion and selected solution of the quadratic matrix equation. We further extend them to handle BT matrices with arrowhead, which allows for the investigation of multi-terminal transistor structures. We evaluate the performance of our approach on a real dataset from the QT simulation of a nano-ribbon transistor and compare it with the sparse direct package PARDISO. When scaling to 16 GPUs, our fused SI and SQ solver is 5.2x faster than the SI module of PARDISO applied to a device 16x shorter. These results highlight the potential of our method to accelerate NEGF-based nano-device simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

An Atomistic Model of Field-Induced Resistive Switching in Valence Change Memory

In Valence Change Memory (VCM) cells, the conductance of an insulating switching layer is reversibly modulated by creating and redistributing point defects under an external field. Accurate simulations of the switching dynamics of these devices can be difficult due to their typically disordered atomic structures and inhomogeneous arrangements of defects. To address this, we introduce an atomistic framework for modelling VCM cells. It combines a stochastic Kinetic Monte Carlo approach for atomic rearrangement with a quantum transport scheme, both parameterized at the ab-initio level by using inputs from Density Functional Theory (DFT). Each of these steps operates directly on the underlying atomic structure. The model thus directly relates the energy landscape and electronic structure of the device to its switching characteristics. We apply this model to simulate non-volatile switching between high- and low-resistance states in an TiN/HfO2/Ti/TiN stack, and analyze both the kinetics and stochasticity of the conductance transitions. We also resolve the atomic nature of current flow resulting from the valence change mechanism, finding that conductive paths are formed between the undercoordinated Hf atoms neighboring oxygen vacancies. The model developed here can be applied to different material systems to evaluate their resistive switching potential, both for use as conventional memory cells and as neuromorphic computing primitives.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

2-D materials for ultra-scaled field-effect transistors: hundred candidates under the ab initio microscope

Thanks to their unique properties single-layer 2-D materials appear as excellent candidates to extend Moore's scaling law beyond the currently manufactured silicon FinFETs. However, the known 2-D semiconducting components, essentially transition metal dichalcogenides, are still far from delivering the expected performance. Based on a recent theoretical study that predicts the existence of more than 1,800 exfoliable 2-D materials, we investigate here the 100 most promising contenders for logic applications. Their "current vs. voltage" characteristics are simulated from first-principles, combining density-functional theory and advanced quantum transport calculations. Both n- and p-type configurations are considered, with gate lengths ranging from 15 down to 5 nm. From this unprecedented collection of electronic materials, we identify 13 compounds with electron and hole currents potentially much higher than in future Si FinFETs. The resulting database widely expands the design space of 2-D transistors and provides original guidelines to the materials and device engineering community.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A back-end, CMOS compatible ferroelectric Field Effect Transistor for synaptic weights

Neuromorphic computing architectures enable the dense co-location of memory and processing elements within a single circuit. This co-location removes the communication bottleneck of transferring data between separate memory and computing units as in standard von Neuman architectures for data-critical applications including machine learning. The essential building blocks of neuromorphic systems are non-volatile synaptic elements such as memristors. Key memristor properties include a suitable non-volatile resistance range, continuous linear resistance modulation and symmetric switching. In this work, we demonstrate voltage-controlled, symmetric and analog potentiation and depression of a ferroelectric Hf$_{57}$Zr$_{43}$O$_{2}$ (HZO) field effect transistor (FeFET) with good linearity. Our FeFET operates with a low writing energy (fJ) and fast programming time (40 ns). Retention measurements have been done over 4-bits depth with low noise (1%) in the tungsten oxide (WO$_{x}$) read out channel. By adjusting the channel thickness from 15nm to 8nm, the on/off ratio of the FeFET can be engineered from 1% to 200% with an on-resistance ideally >100 kOhm, depending on the channel geometry. The device concept is using earth-abundant materials, and is compatible with a back end of line (BEOL) integration into complementary metal-oxidesemiconductor (CMOS) processes. It has therefore a great potential for the fabrication of high density, large-scale integrated arrays of artificial analog synapses.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Charge Transport in Semiconductors Assembled from Nanocrystals

The potential of semiconductors assembled from nanocrystals (NC semiconductors) has been demonstrated for a broad array of electronic and optoelectronic devices, including transistors, light emitting diodes, solar cells, photodetectors, thermoelectrics, and phase charge memory cells. Despite the commercial success of nanocrystals as optical absorbers and emitters, applications involving charge transport through NC semiconductors have eluded exploitation due to the inability for predictive control of their electronic properties. Here, we perform large-scale, ab-initio simulations to understand carrier transport, generation, and trapping in NC-based semiconductors from first principles. We use these findings to build the first predictive model for charge transport in NC semiconductors, which we validate experimentally. Our work reveals that we have been thinking about transport in NC semiconductors incorrectly. Our new insights provide a path for systematic engineering of NC semiconductors, which in fact offer previously unexplored opportunities for tunability not achievable in other semiconductor systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Efficient partitioning of surface Green's function: toward ab initio contact resistance study

In this work, we propose an efficient computational scheme for first-principle quantum transport simulations to evaluate the open-boundary conditions. Its partitioning differentiates from conventional methods in that the contact self-energy matrices are constructed on smaller building blocks, principal layers (PL), while conventionally it was restricted to have the same lateral dimensions of the adjoining atoms in a channel region. Here, we obtain the properties of bulk electrodes through non-equilibrium Green's function (NEGF) approach with significant improvements in the computational efficiency without sacrificing the accuracy of results. To exemplify the merits of the proposed method we investigate the carrier density dependency of contact resistances in silicon nanowire devices connected to bulk metallic contacts.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

First-principles calculations for ferroelectrics at constant polarization using generalized Wannier functions

Localized Wannier functions provide an efficient and intuitive framework to compute electric polarization from first-principles. They can also be used to represent the electronic systems at fixed electric field and to determine dielectric properties of insulating materials. Here we develop a Wannier-function-based formalism to perform first-principles calculations at fixed polarization. Such an approach allows to extract the polarization-energy landscape of a crystal and thus supports the theoretical investigation of polar materials. To facilitate the calculations, we implement a quasi-Newton method that simultaneously relaxes the internal coordinates and adjusts the electric field in crystals at fixed polarization. The method is applied to study the ferroelectric behavior of $\mathrm{BaTiO_3}$ and $\mathrm{PbTiO_3}$ in tetragonal phases. The physical processes driving the ferroelectricity of both compounds are examined thanks to the localized orbital picture offered by Wannier functions. Hence, changes in chemical bonding under ferroelectric distortion can be accurately visualized. The difference in the ferroelectric properties of $\mathrm{BaTiO_3}$ and $\mathrm{PbTiO_3}$ is highlighted. It can be traced back to the peculiarities of their electronic structures.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Winterface: An Interface from Wannier90 to Quantum Transport

In this work a framework for quantum transport simulation from first principles is introduced, focusing on the coherent case. The model is based on the non-equilibrium Green's function (NEGF) formalism and maximally localized Wannier functions (MLWFs). Any device simulation, here based on two-dimensional (2-D) materials, starts by identifying a representative unit cell, computing its electronic structure with density functional theory (DFT), and converting the plane-wave results into a set of MLWFs. From this localized representation of the original unit cell, the device Hamiltonian can be constructed with the help of properly designed upscaling techniques. Here, a powerful tool called Winterface is presented to automatize the whole process and interface the initial MLWF representation with a quantum transport solver. Its concepts, algorithms, and general functionality are discussed on the basis of a molybdenum disulfide (2-D) monolayer structure, as well as its combination with tungsten disulfide. The developed approach can be considered as completely general, restricted only by the capability of the user to perform the required DFT calculations and to "wannierize" its plane-wave results.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Lithiation-delithiation cycles of amorphous Si nanowires investigated by molecular dynamics simulations

The atomistic mechanisms during lithiation and delithiation of amorphous Si nanowires ($a$-SiNW) have been investigated over cycles by molecular dynamics simulations. First, the Modified Embedded Atom Method (MEAM) potential from Cui et al. [J. Power Sources. 2012, (207) 150] has been further optimized on static (Li$_x$Si alloy phases and point defect energies) and on dynamic properties (Li diffusion) to reproduce the lithiation of small crystalline Si nanowires calculated at the {\it ab initio} level. The lithiation of $a$-SiNW reveals a two-phase process of lithiation with a larger diffusion interface compared to crystalline Si lithiation. Compressive axial stresses are observed in the amorphous Si$_x$Li alloy outer shell. They are easily released thanks to the soft glassy behavior of the amorphous alloy. Conversely, in crystalline SiNW, the larger stress in the narrow crystalline lithiated interface is hardly released and requires a phase transformation to amorphous to operate, which delays the lithiation. The history of the charge-discharge cycles as well as the temperature appear as driving forces for phase transformation from amorphous Li$_x$Si alloy to the more stable crystalline phase counterpart. Our work suggest that a full delithiation could heal the SiNWs to improve the life cycles of Li-ion batteries with Si anode.

0 citations0 reviewsNo code linkedOpen access