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Mathieu Luisier

Mathieu Luisier appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.comp-phcond-mat.dis-nnDistributed, Parallel, and Cluster ComputingEmerging TechnologiesPerformancephysics.app-phquant-ph

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Published work

24 published item(s)

preprint2026arXiv

Parallel Quadratic Selected Inversion in Quantum Transport Simulation

Driven by Moore's Law, the dimensions of transistors have been pushed down to the nanometer scale. Advanced quantum transport (QT) solvers are required to accurately simulate such nano-devices. The non-equilibrium Green's function (NEGF) formalism lends itself optimally to these tasks, but it is computationally very intensive, involving the selected inversion (SI) of matrices and the selected solution of quadratic matrix (SQ) equations. Existing algorithms to tackle these numerical problems are ideally suited to GPU acceleration, e.g., the so-called recursive Green's function (RGF) technique, but they are typically sequential, require block-tridiagonal (BT) matrices as inputs, and their implementation has been so far restricted to shared memory parallelism, thus limiting the achievable device sizes. To address these shortcomings, we introduce distributed methods that build on RGF and enable parallel selected inversion and selected solution of the quadratic matrix equation. We further extend them to handle BT matrices with arrowhead, which allows for the investigation of multi-terminal transistor structures. We evaluate the performance of our approach on a real dataset from the QT simulation of a nano-ribbon transistor and compare it with the sparse direct package PARDISO. When scaling to 16 GPUs, our fused SI and SQ solver is 5.2x faster than the SI module of PARDISO applied to a device 16x shorter. These results highlight the potential of our method to accelerate NEGF-based nano-device simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

An Atomistic Model of Field-Induced Resistive Switching in Valence Change Memory

In Valence Change Memory (VCM) cells, the conductance of an insulating switching layer is reversibly modulated by creating and redistributing point defects under an external field. Accurate simulations of the switching dynamics of these devices can be difficult due to their typically disordered atomic structures and inhomogeneous arrangements of defects. To address this, we introduce an atomistic framework for modelling VCM cells. It combines a stochastic Kinetic Monte Carlo approach for atomic rearrangement with a quantum transport scheme, both parameterized at the ab-initio level by using inputs from Density Functional Theory (DFT). Each of these steps operates directly on the underlying atomic structure. The model thus directly relates the energy landscape and electronic structure of the device to its switching characteristics. We apply this model to simulate non-volatile switching between high- and low-resistance states in an TiN/HfO2/Ti/TiN stack, and analyze both the kinetics and stochasticity of the conductance transitions. We also resolve the atomic nature of current flow resulting from the valence change mechanism, finding that conductive paths are formed between the undercoordinated Hf atoms neighboring oxygen vacancies. The model developed here can be applied to different material systems to evaluate their resistive switching potential, both for use as conventional memory cells and as neuromorphic computing primitives.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

2-D materials for ultra-scaled field-effect transistors: hundred candidates under the ab initio microscope

Thanks to their unique properties single-layer 2-D materials appear as excellent candidates to extend Moore's scaling law beyond the currently manufactured silicon FinFETs. However, the known 2-D semiconducting components, essentially transition metal dichalcogenides, are still far from delivering the expected performance. Based on a recent theoretical study that predicts the existence of more than 1,800 exfoliable 2-D materials, we investigate here the 100 most promising contenders for logic applications. Their "current vs. voltage" characteristics are simulated from first-principles, combining density-functional theory and advanced quantum transport calculations. Both n- and p-type configurations are considered, with gate lengths ranging from 15 down to 5 nm. From this unprecedented collection of electronic materials, we identify 13 compounds with electron and hole currents potentially much higher than in future Si FinFETs. The resulting database widely expands the design space of 2-D transistors and provides original guidelines to the materials and device engineering community.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A back-end, CMOS compatible ferroelectric Field Effect Transistor for synaptic weights

Neuromorphic computing architectures enable the dense co-location of memory and processing elements within a single circuit. This co-location removes the communication bottleneck of transferring data between separate memory and computing units as in standard von Neuman architectures for data-critical applications including machine learning. The essential building blocks of neuromorphic systems are non-volatile synaptic elements such as memristors. Key memristor properties include a suitable non-volatile resistance range, continuous linear resistance modulation and symmetric switching. In this work, we demonstrate voltage-controlled, symmetric and analog potentiation and depression of a ferroelectric Hf$_{57}$Zr$_{43}$O$_{2}$ (HZO) field effect transistor (FeFET) with good linearity. Our FeFET operates with a low writing energy (fJ) and fast programming time (40 ns). Retention measurements have been done over 4-bits depth with low noise (1%) in the tungsten oxide (WO$_{x}$) read out channel. By adjusting the channel thickness from 15nm to 8nm, the on/off ratio of the FeFET can be engineered from 1% to 200% with an on-resistance ideally >100 kOhm, depending on the channel geometry. The device concept is using earth-abundant materials, and is compatible with a back end of line (BEOL) integration into complementary metal-oxidesemiconductor (CMOS) processes. It has therefore a great potential for the fabrication of high density, large-scale integrated arrays of artificial analog synapses.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Charge Transport in Semiconductors Assembled from Nanocrystals

The potential of semiconductors assembled from nanocrystals (NC semiconductors) has been demonstrated for a broad array of electronic and optoelectronic devices, including transistors, light emitting diodes, solar cells, photodetectors, thermoelectrics, and phase charge memory cells. Despite the commercial success of nanocrystals as optical absorbers and emitters, applications involving charge transport through NC semiconductors have eluded exploitation due to the inability for predictive control of their electronic properties. Here, we perform large-scale, ab-initio simulations to understand carrier transport, generation, and trapping in NC-based semiconductors from first principles. We use these findings to build the first predictive model for charge transport in NC semiconductors, which we validate experimentally. Our work reveals that we have been thinking about transport in NC semiconductors incorrectly. Our new insights provide a path for systematic engineering of NC semiconductors, which in fact offer previously unexplored opportunities for tunability not achievable in other semiconductor systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Efficient partitioning of surface Green's function: toward ab initio contact resistance study

In this work, we propose an efficient computational scheme for first-principle quantum transport simulations to evaluate the open-boundary conditions. Its partitioning differentiates from conventional methods in that the contact self-energy matrices are constructed on smaller building blocks, principal layers (PL), while conventionally it was restricted to have the same lateral dimensions of the adjoining atoms in a channel region. Here, we obtain the properties of bulk electrodes through non-equilibrium Green's function (NEGF) approach with significant improvements in the computational efficiency without sacrificing the accuracy of results. To exemplify the merits of the proposed method we investigate the carrier density dependency of contact resistances in silicon nanowire devices connected to bulk metallic contacts.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

First-principles calculations for ferroelectrics at constant polarization using generalized Wannier functions

Localized Wannier functions provide an efficient and intuitive framework to compute electric polarization from first-principles. They can also be used to represent the electronic systems at fixed electric field and to determine dielectric properties of insulating materials. Here we develop a Wannier-function-based formalism to perform first-principles calculations at fixed polarization. Such an approach allows to extract the polarization-energy landscape of a crystal and thus supports the theoretical investigation of polar materials. To facilitate the calculations, we implement a quasi-Newton method that simultaneously relaxes the internal coordinates and adjusts the electric field in crystals at fixed polarization. The method is applied to study the ferroelectric behavior of $\mathrm{BaTiO_3}$ and $\mathrm{PbTiO_3}$ in tetragonal phases. The physical processes driving the ferroelectricity of both compounds are examined thanks to the localized orbital picture offered by Wannier functions. Hence, changes in chemical bonding under ferroelectric distortion can be accurately visualized. The difference in the ferroelectric properties of $\mathrm{BaTiO_3}$ and $\mathrm{PbTiO_3}$ is highlighted. It can be traced back to the peculiarities of their electronic structures.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Winterface: An Interface from Wannier90 to Quantum Transport

In this work a framework for quantum transport simulation from first principles is introduced, focusing on the coherent case. The model is based on the non-equilibrium Green's function (NEGF) formalism and maximally localized Wannier functions (MLWFs). Any device simulation, here based on two-dimensional (2-D) materials, starts by identifying a representative unit cell, computing its electronic structure with density functional theory (DFT), and converting the plane-wave results into a set of MLWFs. From this localized representation of the original unit cell, the device Hamiltonian can be constructed with the help of properly designed upscaling techniques. Here, a powerful tool called Winterface is presented to automatize the whole process and interface the initial MLWF representation with a quantum transport solver. Its concepts, algorithms, and general functionality are discussed on the basis of a molybdenum disulfide (2-D) monolayer structure, as well as its combination with tungsten disulfide. The developed approach can be considered as completely general, restricted only by the capability of the user to perform the required DFT calculations and to "wannierize" its plane-wave results.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Lithiation-delithiation cycles of amorphous Si nanowires investigated by molecular dynamics simulations

The atomistic mechanisms during lithiation and delithiation of amorphous Si nanowires ($a$-SiNW) have been investigated over cycles by molecular dynamics simulations. First, the Modified Embedded Atom Method (MEAM) potential from Cui et al. [J. Power Sources. 2012, (207) 150] has been further optimized on static (Li$_x$Si alloy phases and point defect energies) and on dynamic properties (Li diffusion) to reproduce the lithiation of small crystalline Si nanowires calculated at the {\it ab initio} level. The lithiation of $a$-SiNW reveals a two-phase process of lithiation with a larger diffusion interface compared to crystalline Si lithiation. Compressive axial stresses are observed in the amorphous Si$_x$Li alloy outer shell. They are easily released thanks to the soft glassy behavior of the amorphous alloy. Conversely, in crystalline SiNW, the larger stress in the narrow crystalline lithiated interface is hardly released and requires a phase transformation to amorphous to operate, which delays the lithiation. The history of the charge-discharge cycles as well as the temperature appear as driving forces for phase transformation from amorphous Li$_x$Si alloy to the more stable crystalline phase counterpart. Our work suggest that a full delithiation could heal the SiNWs to improve the life cycles of Li-ion batteries with Si anode.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Compositional bowing of band energies and their deformation potentials in strained InGaAs ternary alloys: a first-principles study

Using first-principles calculations, we show that the conduction and valence band energies and their deformation potentials exhibit a non-negligible compositional bowing in strained ternary semiconductor alloys such as InGaAs. The electronic structure of these compounds has been calculated within the framework of local density approximation and hybrid functional approach for large cubic supercells and special quasi-random structures, which represent two kinds of model structures for random alloys. We find that the predicted bowing effect for the band energy deformation potentials is rather insensitive to the choice of the functional and alloy structural model. The direction of bowing is determined by In cations that give a stronger contribution to the formation of the In$_{x}$Ga$_{1-x}$As valence band states with $x\gtrsim 0.5$, compared to Ga cations.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Diffusion Mechanisms in Li$_{0.5}$CoO$_2$ -- A Computational Study

An atomistic study of the order-effect occurring in Li$_{x}$CoO$_{2}$ at $x=0.5$ is presented and an explanation for the computationally and experimentally observed dip in the Li diffusivity is proposed. Configurations where a single half-filled Li layer arranged in either a linear or a zig-zag pattern are simulated. It is found that the lowest energy phase is the zig-zag pattern rather than the linear arrangement that currently is considered to be of lowest energy. Atomic interactions are modeled at the DFT level of accuracy and energy barriers for Li-ion diffusion are determined from searches for first order saddle points on the resulting potential energy surface. The determined saddle points reveal that the barriers for diffusion parallel and perpendicular to the zig-zag phase differ significantly and explain the observed dip in diffusivity.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Lithiation of Tin Oxide: A Computational Study

We suggest that the lithiation of pristine SnO forms a layered Li$_\text{X}$O structure while the expelled tin atoms agglomerate into 'surface' planes separating the Li$_\text{X}$O layers. The proposed lithiation model widely differs from the common assumption that tin segregates into nano-clusters embedded in the lithia matrix. With this model we are able to account for the various tin bonds that are seen experimentally and explain the three volume expansion phases that occur when SnO undergoes lithiation: (i) at low concentrations Li behaves as an intercalated species inducing small volume increases; (ii) for intermediate concentrations SnO transforms into lithia causing a large expansion; (iii) finally, as the Li concentration further increases a saturation of the lithia takes place until a layered Li$_2$O is formed. A moderate volume expansion results from this last process. We also report a 'zipper' nucleation mechanism that could provide the seed for the transformation from tin oxide to lithium oxide.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

The reversible lithiation of SnO: a three-phase process

A high reversible capacity is a key feature for any rechargeable battery. In the lithium-ion battery technology, tin-oxide anodes do fulfill this requirement, but a fast loss of capacity hinders a full commercialization. Using first-principles calculations, we propose a microscopic model that sheds light on the reversible lithiation/delithiation of SnO and reveals that a sintering of Sn causes a strong degradation of SnO-based anodes. When the initial irreversible transformation ends, active anode grains consist of Li-oxide layers separated by Sn bilayers. During the following reversible lithiation, the Li-oxide undergoes two phase transformations that give rise to a Li-enrichment of the oxide and the formation of a layered SnLi composite. We find that the model-predicted anode volume expansion and voltage profile agree well with experiment, and a layered anode grain is highly-conductive and has a theoretical reversible capacity of 4.5 Li atoms per a SnO host unit. The model suggests that the grain structure has to remain layered to sustain its reversible capacity and a thin-film design of battery anodes could be a remedy for the capacity loss.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Giant Quasiparticle Bandgap Modulation in Graphene Nanoribbons Supported on Weakly Interacting Surfaces

In general, there are two major factors affecting bandgaps in nanostructures: (i) the enhanced electron-electron interactions due to confinement and (ii) the modified self-energy of electrons due to the dielectric screening. While recent theoretical studies on graphene nanoribbons (GNRs) report on the first effect, the effect of dielectric screening from the surrounding materials such as substrates has not been thoroughly investigated. Using large-scale electronic structure calculations based on the GW approach, we show that when GNRs are deposited on substrates, bandgaps get strongly suppressed (by as much as 1 eV) even though the GNR-substrate interaction is weak.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Accurate six-band nearest-neighbor tight-binding model for the pi-bands of bulk graphene and graphene nanoribbons

Accurate modeling of the pi-bands of armchair graphene nanoribbons (AGNRs) requires correctly reproducing asymmetries in the bulk graphene bands as well as providing a realistic model for hydrogen passivation of the edge atoms. The commonly used single-pz orbital approach fails on both these counts. To overcome these failures we introduce a nearest-neighbor, three orbital per atom p/d tight-binding model for graphene. The parameters of the model are fit to first-principles density-functional theory (DFT) - based calculations as well as to those based on the many-body Green's function and screened-exchange (GW) formalism, giving excellent agreement with the ab initio AGNR bands. We employ this model to calculate the current-voltage characteristics of an AGNR MOSFET and the conductance of rough-edge AGNRs, finding significant differences versus the single-pz model. These results show that an accurate bandstructure model is essential for predicting the performance of graphene-based nanodevices.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Distributed NEGF Algorithms for the Simulation of Nanoelectronic Devices with Scattering

Through the Non-Equilibrium Green's Function (NEGF) formalism, quantum-scale device simulation can be performed with the inclusion of electron-phonon scattering. However, the simulation of realistically sized devices under the NEGF formalism typically requires prohibitive amounts of memory and computation time. Two of the most demanding computational problems for NEGF simulation involve mathematical operations with structured matrices called semiseparable matrices. In this work, we present parallel approaches for these computational problems which allow for efficient distribution of both memory and computation based upon the underlying device structure. This is critical when simulating realistically sized devices due to the aforementioned computational burdens. First, we consider determining a distributed compact representation for the retarded Green's function matrix $G^{R}$. This compact representation is exact and allows for any entry in the matrix to be generated through the inherent semiseparable structure. The second parallel operation allows for the computation of electron density and current characteristics for the device. Specifically, matrix products between the distributed representation for the semiseparable matrix $G^{R}$ and the self-energy scattering terms in $Σ^{<}$ produce the less-than Green's function $G^{<}$. As an illustration of the computational efficiency of our approach, we stably generate the mobility for nanowires with cross-sectional sizes of up to 4.5nm, assuming an atomistic model with scattering.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Effects of Interface Roughness Scattering on Radio Frequency Performance of Silicon Nanowire Transistors

The effects of an atomistic interface roughness in n-type silicon nanowire transistors (SiNWT) on the radio frequency performance are analyzed. Interface roughness scattering (IRS) is statistically investigated through a three dimensional full-band quantum transport simulation based on the sp3d5s?* tight-binding model. As the diameter of the SiNWT is scaled down below 3 nm, IRS causes a significant reduction of the cut-off frequency. The fluctuations of the conduction band edge due to the rough surface lead to a reflection of electrons through mode-mismatch. This effect reduces the velocity of electrons and hence the transconductance considerably causing a cut-off frequency reduction.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Full 3D Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs

The influence of interface roughness scattering (IRS) on the performances of silicon nanowire field-effect transistors (NWFETs) is numerically investigated using a full 3D quantum transport simulator based on the atomistic sp3d5s* tight-binding model. The interface between the silicon and the silicon dioxide layers is generated in a real-space atomistic representation using an experimentally derived autocovariance function (ACVF). The oxide layer is modeled in the virtual crystal approximation (VCA) using fictitious SiO2 atoms. <110>-oriented nanowires with different diameters and randomly generated surface configurations are studied. The experimentally observed ON-current and the threshold voltage is quantitatively captured by the simulation model. The mobility reduction due to IRS is studied through a qualitative comparison of the simulation results with the experimental results.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Influence of cross-section geometry and wire orientation on the phonon shifts in ultra-scaled Si nanowires

Engineering of the cross-section shape and size of ultra-scaled Si nanowires (SiNWs) provides an attractive way for tuning their structural properties. The acoustic and optical phonon shifts of the free-standing circular, hexagonal, square and triangular SiNWs are calculated using a Modified Valence Force Field (MVFF) model. The acoustic phonon blue shift (acoustic hardening) and the optical phonon red shift (optical softening) show a strong dependence on the cross-section shape and size of the SiNWs. The triangular SiNWs have the least structural symmetry as revealed by the splitting of the degenerate flexural phonon modes and The show the minimum acoustic hardening and the maximum optical hardening. The acoustic hardening, in all SiNWs, is attributed to the decreasing difference in the vibrational energy distribution between the inner and the surface atoms with decreasing cross-section size. The optical softening is attributed to the reduced phonon group velocity and the localization of the vibrational energy density on the inner atoms. While the acoustic phonon shift shows a strong wire orientation dependence, the optical phonon softening is independent of wire orientation.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Shape and orientation effects on the ballistic phonon thermal properties of ultra-scaled Si nanowires

The effect of geometrical confinement, atomic position and orientation of Silicon nanowires (SiNWs) on their thermal properties are investigated using the phonon dispersion obtained using a Modified Valence Force Field (MVFF) model. The specific heat ($C_{v}$) and the ballistic thermal conductance ($κ^{bal}_{l}$) shows anisotropic variation with changing cross-section shape and size of the SiNWs. The $C_{v}$ increases with decreasing cross-section size for all the wires. The triangular wires show the largest $C_{v}$ due to their highest surface-to-volume ratio. The square wires with [110] orientation show the maximum $κ^{bal}_{l}$ since they have the highest number of conducting phonon modes. At the nano-scale a universal scaling law for both $C_{v}$ and $κ^{bal}_{l}$ are obtained with respect to the number of atoms in the unit cell. This scaling is independent of the shape, size and orientation of the SiNWs revealing a direct correlation of the lattice thermal properties to the atomistic properties of the nanowires. Thus, engineering the SiNW cross-section shape, size and orientation open up new ways of tuning the thermal properties at the nanometer regime.

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preprint2010arXiv

Atomistic modeling of the phonon dispersion and lattice properties of free-standing <100> Si nanowires

Phonon dispersions in <100> silicon nanowires (SiNW) are modeled using a Modified Valence Force Field (MVFF) method based on atomistic force constants. The model replicates the bulk Si phonon dispersion very well. In SiNWs, apart from four acoustic like branches, a lot of flat branches appear indicating strong phonon confinement in these nanowires and strongly affecting their lattice properties. The sound velocity (Vsnd) and the lattice thermal conductance (kl) decrease as the wire cross-section size is reduced whereas the specific heat (Cv) increases due to increased phonon confinement and surface-to-volume ratio (SVR).

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preprint2010arXiv

Modified valence force field approach for phonon dispersion: from zinc-blende bulk to nanowires

he correct estimation of thermal properties of ultra-scaled CMOS and thermoelectric semiconductor devices demands for accurate phonon modeling in such structures. This work provides a detailed description of the modified valence force field (MVFF) method to obtain the phonon dispersion in zinc-blende semiconductors. The model is extended from bulk to nanowires after incorporating proper boundary conditions. The computational demands by the phonon calculation increase rapidly as the wire cross-section size increases. It is shown that the nanowire phonon spectrum differ considerably from the bulk dispersions. This manifests itself in the form of different physical and thermal properties in these wires. We believe that this model and approach will prove beneficial in the understanding of the lattice dynamics in the next generation ultra-scaled semiconductor devices.

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preprint2010arXiv

Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs

A simulation methodology for ultra-scaled InAs quantum well field effect transistors (QWFETs) is presented and used to provide design guidelines and a path to improve device performance. A multiscale modeling approach is adopted, where strain is computed in an atomistic valence-force-field method, an atomistic sp3d5s* tight-binding model is used to compute channel effective masses, and a 2-D real-space effective mass based ballistic quantum transport model is employed to simulate three terminal current-voltage characteristics including gate leakage. The simulation methodology is first benchmarked against experimental I-V data obtained from devices with gate lengths ranging from 30 to 50 nm. A good quantitative match is obtained. The calibrated simulation methodology is subsequently applied to optimize the design of a 20 nm gate length device. Two critical parameters have been identified to control the gate leakage magnitude of the QWFETs, (i) the geometry of the gate contact (curved or square) and (ii) the gate metal work function. In addition to pushing the threshold voltage towards an enhancement mode operation, a higher gate metal work function can help suppress the gate leakage and allow for much aggressive insulator scaling.

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preprint2009arXiv

On Landauer vs. Boltzmann and Full Band vs. Effective Mass Evaluation of Thermoelectric Transport Coefficients

The Landauer approach to diffusive transport is mathematically related to the solution of the Boltzmann transport equation, and expressions for the thermoelectric parameters in both formalisms are presented. Quantum mechanical and semiclassical techniques to obtain from a full description of the bandstructure, E(k), the number of conducting channels in the Landauer approach or the transport distribution in the Boltzmann solution are developed and compared. Thermoelectric transport coefficients are evaluated from an atomistic level, full band description of a crystal. Several example calculations for representative bulk materials are presented, and the full band results are related to the more common effective mass formalism. Finally, given a full E(k) for a crystal, a procedure to extract an accurate, effective mass level description is presented.

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