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Researcher profile

Masayuki Ochi

Masayuki Ochi contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elcond-mat.supr-con

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Published work

7 published item(s)

preprint2022arXiv

First-principles study of defect formation energies in LaO$X$S$_2$ ($X=$ Sb, Bi)

We theoretically investigate defect formation energies in LaO$X$S$_2$ ($X=$Sb, Bi) using first-principles calculation. We find that the oxygen vacancy is relatively stable, where its formation energy is higher in $X=$ Sb than in $X=$ Bi. An interesting feature of $X=$ Sb is that the vacancy of the in-plane sulfur atom becomes more stable than in $X=$ Bi, caused by the formation of an Sb$_2$ dimer and the electron occupation of the impurity energy levels. The formation energies of cation defects and anion-cation antisite defects are positive for the chemical equilibrium condition used in this study. Fluorine likely replaces oxygen, and its defect formation energy is negative for both $X=$ Sb and Bi, while that for $X=$ Sb is much higher than $X=$ Bi. Our study clarifies the stability of several point defects and suggests that the in-plane structural instability is enhanced in $X=$ Sb, which seems to affect a structural change caused by some in-plane point defects.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

First-principles study on the electrical resistivity in zirconium dichalcogenides with multi-valley bands: mode-resolved analysis of electron-phonon scattering

Based on the first-principles calculations, we study the electron-phonon scattering effect on the resistivity in the zirconium dichalcogenides, $\text{Zr}_{}\text{S}_{2}$ and $\text{Zr}_{}\text{Se}_{2}$, whose electronic band structures possess multiple valleys at conduction band minimum. The computed resistivity exhibits non-linear temperature dependence, especially for $\text{Zr}_{}\text{S}_{2}$, which is also experimentally observed on some TMDCs such as $\text{Ti}_{}\text{S}_{2}$ and $\text{Zr}_{}\text{Se}_{2}$. By performing the decomposition of the contributions of scattering processes, we find that the intra-valley scattering by acoustic phonons mainly contributes to the resistivity around 50 K. Moreover, the contribution of the intra-valley scattering by optical phonons becomes dominant even above 80 K, which is a sufficiently low temperature compared with their frequencies. By contrast, the effect of the inter-valley scattering is found to be not significant. Our study identifies the characteristic scattering channels in the resistivity of the zirconium dichalcogenides, which provides critical knowledge to microscopically understand electron transport in systems with multi-valley band structure.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Material design with the van der Waals stacking of bismuth-halide chains realizing a higher-order topological insulator

The van der Waals (vdW) materials with low dimensions have been extensively studied as a platform to generate exotic quantum properties. Advancing this view, a great deal of attention is currently paid to topological quantum materials with vdW structures. Here, we provide a new concept of designing topological materials by the vdW stacking of quantum spin Hall insulators (QSHIs). Most interestingly, a slight shift of inversion center in the unit cell caused by a modification of stacking is found to induce the topological variation from a trivial insulator to a higher-order topological insulator (HOTI). Based on that, we present the first experimental realization of a HOTI by investigating a bismuth bromide Bi4Br4 with angle-resolved photoemission spectroscopy (ARPES). The unique feature in bismuth halides capable of selecting various topology only by differently stacking chains, combined with the great advantage of the vdW structure, offers a fascinating playground for engineering topologically non-trivial edge-states toward future spintronics applications.

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preprint2021arXiv

Possibility of n-type doping in CaAl$_2$Si$_2$-type Zintl phase compound CaZn$_2X_2$ ($X$ = As, P)

Motivated by a recent theoretical suggestion that doping electrons into various CaAl$_2$Si$_2$-type Zintl phase compounds may give rise to high thermoelectric performance, we explore the possibility of n-type (electron carrier) doping of CaZn$_2X_2$ ($X$ = As, P) using first principles calculation. We consider n-type doping of CaZn$_2X_2$ with the following two situations: interstitial-site doping of alkaline earth metals $AE$ (= Mg, Ca, Sr, Ba) and group 3 elements $G3$ (= Sc, Y, La), and $G3$ substitutional doping for the Ca site. The evaluation of the formation energy of these defects in various charged states reveals that the interstitial-site doping of $AE$ = Ca/Mg or $G3$ = Sc/Y, and $G3$ = La/Y substitutional doping for the Ca site are relatively favorable among the possibilities considered. In particular, the formation energy of the La substitutional doping for the Ca site is the lowest among the considered cases both for CaZn$_2X_2$ ($X$ = As, P) and is negative, which implies that La is expected to be substituted for the Ca site and provide electron carriers spontaneously. We also find that for each doping case considered, the formation energy of the defects is smaller for $X$ = As than for $X$ = P, which suggests that former is relatively easier to realize n-type doping than the latter.

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preprint2021arXiv

Simplification of the local full vertex in the impurity problem in DMFT and its applications for the nonlocal correlation

The two-particle vertex function is crucial for the diagrammatic extensions beyond DMFT for the nonlocal fluctuation. However, estimating the two-particle quantities is still a challenging task. In this study, we propose a simplification of the local two-particle full vertex and, using the simplified full vertex, we develop two methods to take into account the nonlocal fluctuation. We apply these methods to several models and confirm that our methods can capture important behaviors such as the pseudo gap in the DMFT + nonlocal calculation. In addition, the numerical costs are largely reduced compared to the conventional methods.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Superconducting mechanism for the cuprate Ba$_2$CuO$_{3+δ}$ based on a multiorbital Lieb lattice model

For the recently discovered cuprate superconductor $\mathrm{Ba_{2}CuO_{3+δ}}$, we propose a lattice structure which resembles the model considered by Lieb to represent the vastly oxygen-deficient material. We first investigate the stability of the Lieb-lattice structure, and then construct a multiorbital Hubbard model based on first-principles calculation. By applying the fluctuation-exchange approximation to the model and solving the linearized Eliashberg equation, we show that $s$-wave and $d$-wave pairings closely compete with each other, and, more interestingly, that the intra-orbital and inter-orbital pairings coexist. We further show that, if the energy of the $d_{3z^2-r^2}$ band is raised to make it "incipient" with the lower edge of the band close to the Fermi level within a realistic band filling regime, $s\pm$-wave superconductivity is strongly enhanced. We reveal an intriguing relation between the Lieb model and the two-orbital model for the usual K$_2$NiF$_4$ structure where a close competition between $s-$ and $d-$wave pairings is known to occur. The enhanced superconductivity in the present model is further shown to be related to an enhancement found previously in the bilayer Hubbard model with an incipient band.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

First-principles study of LaOPbBiS$_3$ and its analogous compounds as thermoelectric materials

LaOBiPbS$_3$ is a kind of pnictogen-dichalcogenide layered compounds, which have recently been experimentally investigated as thermoelectric materials owing to their low thermal conductivity and high controllability of constituent elements. However, thermoelectric performance of LaOBiPbS$_3$ is at present not very high and that of its analogous compounds remains to be unknown. In this study, we theoretically investigate thermoelectric properties of 24 possible variations of the constituent elements in LaOBiPbS$_3$ from the viewpoint of the electronic structure. We find that some compounds can have much better thermoelectric performance than LaOBiPbS$_3$; in particular, LaOSbPbSe$_3$ is predicted to have a power factor five times as large as that of LaOBiPbS$_3$. Here, the choice of the pnictogen atom (As, Sb, and Bi), of which the low-energy conduction bands mainly consist, correlates with the calculated power factor and the dimensionless figure of merit, $ZT$. Such correlation comes from the fact that the low-dimensionality of the electronic structure, which enhances the density of states near the band edge, strongly depends on the pnictogen atom through, e.g., the strength of the spin-orbit coupling. Moreover, hybridization of the wave functions in the pnictogen-dichalcogenide layer and those in the rock-salt layer plays a key role in gap opening, and thus is important for achieving high thermoelectric performance. In LaOSbPbSe$_3$, such hybridization also pushes up the conduction band bottom, which enhances the density of states near the band edge and thus the power factor.

0 citations0 reviewsNo code linkedOpen access