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Masayuki Hosoda

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Published work

4 published item(s)

preprint2022arXiv

Josephson junctions of Weyl semimetal $\text{WTe}_2$ induced by spontaneous nucleation of $\text{PdTe}$ superconductor

We report on the fabrication of Josephson junction devices with weak links utilizing the Weyl and higher-order topological semimetal $\text{WTe}_2$. We show that $\text{WTe}_2\text{/Pd}$ contact annealed at a low temperature of 80°C did not exhibit superconducting properties because neither $\text{WTe}_2$ nor Pd are superconductors in the ground state. Upon 180°C annealing, spontaneous formation of superconducting $\text{PdTe}$ due to Pd diffusion enabled us to obtain the interface between $\text{WTe}_2$ and superconductor suitable for the Josephson junction. This result is a facile technique to make a Josephson junction and induce Cooper pairs into topological telluride semimetals.

preprint2013arXiv

Locally enhanced conductivity due to the tetragonal domain structure in LaAlO$_{3}$/SrTiO$_{3}$ heterointerfaces

The ability to control materials properties through interface engineering is demonstrated by the appearance of conductivity at the interface of certain insulators, most famously the {001} interface of the band insulators LaAlO$_{3}$ and TiO$_{2}$-terminated SrTiO$_{3}$ (STO). Transport and other measurements in this system show a plethora of diverse physical phenomena. To better understand the interface conductivity, we used scanning superconducting quantum interference device microscopy to image the magnetic field locally generated by current in an interface. At low temperature, we found that the current flowed in conductive narrow paths oriented along the crystallographic axes, embedded in a less conductive background. The configuration of these paths changed on thermal cycling above the STO cubic-to-tetragonal structural transition temperature, implying that the local conductivity is strongly modified by the STO tetragonal domain structure. The interplay between substrate domains and the interface provides an additional mechanism for understanding and controlling the behaviour of heterostructures.

preprint2012arXiv

Critical thickness for ferromagnetism in LaAlO3/SrTiO3 heterostructures

In heterostructures of LaAlO3 (LAO) and SrTiO3 (STO), two nonmagnetic insulators, various forms of magnetism have been observed [1-7], which may [8, 9] or may not [10] arise from interface charge carriers that migrate from the LAO to the interface in an electronic reconstruction [11]. We image the magnetic landscape [5] in a series of n-type samples of varying LAO thickness. We find ferromagnetic patches that appear only above a critical thickness, similar to that for conductivity [12]. Consequently we conclude that an interface reconstruction is necessary for the formation of magnetism. We observe no change in ferromagnetism with gate voltage, and detect ferromagnetism in a non-conducting p-type sample, indicating that the carriers at the interface do not need to be itinerant to generate magnetism. The fact that the ferromagnetism appears in isolated patches whose density varies greatly between samples strongly suggests that disorder or local strain induce magnetism in a population of the interface carriers.

preprint2012arXiv

Measurements of the gate tuned superfluid density in superconducting LaAlO3/SrTiO3

The interface between the insulating oxides LaAlO3 and SrTiO3 exhibits a superconducting two-dimensional electron system that can be modulated by a gate voltage. While gating of the conductivity has been probed extensively and gating of the superconducting critical temperature has been demonstrated, the question whether, and if so how, the gate tunes the superfluid density and superconducting order parameter is unanswered. We present local magnetic susceptibility, related to the superfluid density, as a function of temperature, gate voltage and location. We show that the temperature dependence of the superfluid density at different gate voltages collapse to a single curve characteristic of a full superconducting gap. Further, we show that the dipole moments observed in this system are not modulated by the gate voltage.