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Source author record

Masayoshi Tonouchi

Masayoshi Tonouchi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.supr-concond-mat.mes-hallcond-mat.str-elphysics.app-phphysics.optics

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Published work

7 published item(s)

preprint2020arXiv

Simplified formulas for the generation of terahertz waves from semiconductor surfaces excited with a femtosecond laser

We derive simple formulas to explain terahertz (THz) emission from semiconductor surfaces excited by a femtosecond (fs) laser. Femtosecond optical pulses with energies larger than the bandgap create photocarriers which travel and generate THz radiation, according to the time derivative of the photocurrent. By assuming that only electrons traveling in an ultrafast time scale, less than a few hundred fs, contribute to THz radiation, one can obtain simple expressions for the emission originating from the photocarrier drift accelerated with a built-in field or from the photocarrier diffusion. The emission amplitude of the former is in proportion with electron mobility, the Schottky-Barrier height, and the laser intensity and one of the latter with the laser intensity and diffusion coefficient squared. We also discuss the formula for emission from metal-insulator-semiconductor structures. The derived expressions are useful in understanding the THz emission properties observed by a laser THz emission microscope (LTEM), bringing LTEM into real applications in the field of semiconductor research and development.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Terahertz Excitonics in Carbon Nanotubes: Exciton Autoionization and Multiplication

Excitons play major roles in optical processes in modern semiconductors, such as single-wall carbon nanotubes (SWCNTs), transition metal dichalcogenides, and 2D perovskite quantum wells. They possess extremely large binding energies (>100~meV), dominating absorption and emission spectra even at high temperatures. The large binding energies imply that they are stable, that is, hard to ionize, rendering them seemingly unsuited for optoelectronic devices that require mobile charge carriers, especially terahertz emitters and solar cells. Here, we have conducted terahertz emission and photocurrent studies on films of aligned single-chirality semiconducting SWCNTs and find that excitons autoionize, i.e., spontaneously dissociate into electrons and holes. This process naturally occurs ultrafast (<1~ps) while conserving energy and momentum. The created carriers can then be accelerated to emit a burst of terahertz radiation when a dc bias is applied, with promising efficiency in comparison to standard GaAs-based emitters. Furthermore, at high bias, the accelerated carriers acquire high enough kinetic energy to create secondary excitons through impact exciton generation, again in a fully energy and momentum conserving fashion. This exciton multiplication process leads to a nonlinear photocurrent increase as a function of bias. Our theoretical simulations based on nonequilibrium Boltzmann transport equations, taking into account all possible scattering pathways and a realistic band structure, reproduce all our experimental data semi-quantitatively. These results not only elucidate the momentum-dependent ultrafast dynamics of excitons and carriers in SWCNTs but also suggest promising routes toward terahertz excitonics despite the orders-of-magnitude mismatch between the exciton binding energies and the terahertz photon energies.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Cooper Pair Breakup in YBCO under Strong Terahertz Fields

We show that strong electric fields of ~ 30 kV cm^(-1) at terahertz frequencies can significantly weaken the superconducting characteristics of cuprate superconductors. High-power terahertz time-domain spectroscopy (THz-TDS) was used to investigate the in-plane conductivity of YBa2Cu3O7-delta (YBCO) with highly intense single-cycle terahertz pulses. Even though the terahertz photon energy (~ 1.5 meV) was significantly smaller than the energy gap in YBCO (~ 20-30 meV), the optical conductivity was highly sensitive to the field strength of the applied terahertz transients. Possibly, this is due to an ultrafast, field-induced modification of the superconductor's effective coupling function, leading to a massive Cooper pair breakup. The effect was evident for several YBCO thin films on MgO and LSAT substrates.

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preprint2012arXiv

Reflective terahertz time-domain spectroscopy measurement on the stripe-ordered superconductor La$_{1.84-y}$Nd$_y$Sr$_{0.16}$CuO$_4$

We measured reflectivity on static stripe-ordered La$_{1.84-y}$Nd$_y$Sr$_{0.16}$CuO$_4$ (LNSCO) $y$\,=\,0.1, 0.2, 0.3, and 0.4 by means of reflective terahertz time-domain spectroscopy (THz-TDS) with electric field polarized along c-axis, in which one can obtain lower frequency information than the conventional Fourier transform type spectrometer. Recently, two-dimensional superconducting (2DSC) property \cite{tajima,schafgans,li}, intra-layer perfect conductivity not accompanied with inter-layer superconducting behavior, was reported on LNSCO ($x$\,=0.15\,,\,$y$\,$\geq$\,0.2). We observed the existence of Josephson plasma edge, which suggests that 2DSC is not realized in these compounds.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Terahertz and Infrared Spectroscopy of Gated Large-Area Graphene

We have fabricated a centimeter-size single-layer graphene device, with a gate electrode, which can modulate the transmission of terahertz and infrared waves. Using time-domain terahertz spectroscopy and Fourier-transform infrared spectroscopy in a wide frequency range (10-10000 cm^{-1}), we measured the dynamic conductivity change induced by electrical gating and thermal annealing. Both methods were able to effectively tune the Fermi energy, E_F, which in turn modified the Drude-like intraband absorption in the terahertz as well as the '2E_F onset' for interband absorption in the mid-infrared. These results not only provide fundamental insight into the electromagnetic response of Dirac fermions in graphene but also demonstrate the key functionalities of large-area graphene devices that are desired for components in terahertz and infrared optoelectronics.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Sub-diffraction thin-film sensing with planar terahertz metamaterials

Planar metamaterials have been recently proposed for thin dielectric film sensing in the terahertz frequency range. Although the thickness of the dielectric film can be very small compared with the wavelength, the required area of sensed material is still determined by the diffraction-limited spot size of the terahertz beam excitation. In this article, terahertz near-field sensing is utilized to reduce the spot size. By positioning the metamaterial sensing platform close to the sub-diffraction terahertz source, the number of excited resonators, and hence minimal film area, are significantly reduced. As an additional advantage, a reduction in the number of excited resonators decreases the inter-cell coupling strength, and consequently the resonance Q factor is remarkably increased. The experimental results show that the resonance Q factor is improved by 113%. Moreover, for a film with a thickness of λ/375 the minimal area can be as small as 0.2λby 0.2λ. The success of this work provides a platform for future metamaterial-based sensors for biomolecular detection.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Terahertz radiation by ultrafast spontaneous polarization modulation in multiferroic BiFeO$_3$ thin films

Terahertz (THz) radiation has been observed from multiferroic BiFeO$_3$ thin films via ultrafast modulation of spontaneous polarization upon carrier excitation with illumination of femtosecond laser pulses. The radiated THz pulses from BiFeO$_3$ thin films were clarified to directly reflect the spontaneous polarization state, giving rise to a memory effect in a unique style and enabling THz radiation even at zero-bias electric field. On the basis of our findings, we demonstrate potential approaches to ferroelectric nonvolatile random access memory with nondestructive readability and ferroelectric domain imaging microscopy using THz radiation as a sensitive probe.

0 citations0 reviewsNo code linkedOpen access