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Masaya Notomi

Masaya Notomi contributes to research discovery and scholarly infrastructure.

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Published work

10 published item(s)

preprint2026arXiv

Silicon photonic optical-electrical-optical converters based on load-resistor and current-injection operation

Optical-electrical-optical (OEO) converters are key primitives for low-latency, energy-efficient photonic computing because they enable nonlinear activation and optical signal regeneration on chip. We report two monolithically integrated silicon-photonic OEO converters-load-resistor (high-speed variant) and current-injection (high-gain variant) types-fabricated at a silicon photonics foundry. Each device combines a germanium photodetector with a micro-ring modulator (MRM). The converters exhibit reconfigurable nonlinear transfer functions and measurable on-chip RF OEO gain. The RF OEO gain scales linearly with the MRM bias power, with slopes of 0.10 mW^-1 (load-resistor of 10 kΩ) and 1.4 mW^-1 (current-injection), enabling a gain > 1 region at practical bias powers (~10 mW and ~1 mW, respectively). Eye diagrams confirm clear openings up to 4 Gb/s for a high-speed load-resistor variant with a 500-Ω load. To the best of our knowledge, this is the first experimental demonstration of a monolithically integrated, foundry-fabricated silicon-photonic load-resistor type OEO converter exhibiting reconfigurable nonlinear transfer and on-chip RF OEO gain. In the carrier-injection device, the activation slope exceeds unity, yielding 3.9 dB extinction-ratio regeneration. Short-pulse measurements yield 3-dB bandwidths of 1.49 GHz, 160 MHz (load-resistor of 500 Ω and 10 kΩ), and 76 MHz (current-injection), consistent with the RF data. Energy analysis shows an energy-bandwidth trade-off (RC-limited for load-resistor vs. lifetime-limited for injection) and outline routes to sub-pJ/bit operation via reduced capacitance and improved EO efficiency. These results establish silicon-photonic OEO converters as compact, foundry-compatible building blocks for scalable optoelectronic computing and optical neural networks.

preprint2022arXiv

Imaginary couplings in non-Hermitian coupled-mode theory: Effects on exceptional points of optical resonators

Exceptional point (EP) degeneracies in coupled cavities with gain and loss provide on-chip photonic devices with unconventional features and performance. However, such systems with realistic structures often miss the exact EPs even in simulation, and the mechanism of this EP disruption has yet to be thoroughly identified. Here, we extend the coupled-mode theory of one-dimensional non-Hermitian resonator arrays to study the effects of the imaginary part of the inter-cavity coupling, which is a second-order term and attributed to material amplification, absorption, and radiation. By taking an appropriate gauge for the model, we clarify that the imaginary coupling components have a symmetric form in the effective Hamiltonian and hence represent non-Hermiticity. These additional factors can lift the gain- and loss-based EP degeneracies. However, they are proportional to the sum of the imaginary permittivities for involved cavity pairs. Thus, when the amplification and absorption of adjacent cavities are balanced, their contribution to the imaginary coupling is canceled, and the EP singularity can be restored. Radiation-induced imaginary couplings measure the change in net radiation loss by the interference between cavity modes. Their impact on the EP can also be counteracted by small cavity resonance detuning even in loss-biased cases. We show and analyze eligible simulation examples based on photonic crystal nanocavities, and highlight design of an ideal EP degeneracy that is protected by generalized PT symmetry and induced by radiation.

preprint2022arXiv

Probing the Ginzburg-Landau Potential for Lasers Using Higher-order Photon Correlations

Lasing transition is known to be analogous to the second-order phase transition. Furthermore, for some cases, it is possible to define the Ginzburg-Landau (GL) potential, and the GL theory predicts the photon statistical properties of lasers. However, the GL potential for lasers is surprising, because lasers are operating far from equilibrium. In this paper, we theoretically examine the validity of the GL theory for lasers in terms of various parameters, particularly, the ratio between photon and carrier lifetimes. For this purpose, we use stochastic rate equations and higher-order photon correlation functions. With higher-order photon correlation measurements, we can check whether or not laser dynamics are described by the GL theory. We demonstrate that, for low-$β$ lasers, the GL theory is applicable even when the photon lifetime is comparable to the carrier lifetime and that photon-carrier relaxation oscillation is the fundamental origin of the breakdown of the GL theory, which can be understood in the framework of center manifold reduction.

preprint2021arXiv

Low- and high-$β$ lasers in Class-A limit: photon statistics, linewidth, and the laser-phase transition analogy

Nanocavity lasers are commonly characterized by the spontaneous coupling coefficient $β$ that represents the fraction of photons emitted into the lasing mode. While $β$ is conventionally discussed in semiconductor lasers where the photon lifetime is much shorter than the carrier lifetime (class-B lasers), little is known about $β$ in atomic lasers where the photon lifetime is much longer than the other lifetimes and only the photon degree of freedom exists (class-A lasers). We investigate the impact of the spontaneous coupling coefficient $β$ on lasing properties in the class-A limit by extending the well-known Scully-Lamb master equation. We demonstrate that, in the class-A limit, all the photon statistics are uniquely characterized by $β$ and that the laser phase transition-like analogy becomes transparent. In fact, $β$ perfectly represents the "system size" in phase transition. Finally, we investigate the laser-phase transition analogy from the standpoint of a quantum dissipative system. Calculating a Liouvillian gap, we clarify the relation between $β$ and the continuous phase symmetry breaking.

preprint2020arXiv

Designs toward synchronization of optical limit cycles with coupled silicon photonic crystal microcavities

A driven high-Q Si microcavity is known to exhibit limit cycle oscillation originating from carrier-induced and thermo-optic nonlinearities. We propose a novel nanophotonic device to realize synchronized optical limit cycle oscillations with coupled silicon (Si) photonic crystal (PhC) microcavities. Here, coupled limit cycle oscillators are realized by using coherently coupled Si PhC microcavities. By simulating coupled-mode equations, we theoretically demonstrate mutual synchronization (entrainment) of two limit cycles induced by coherent coupling. Furthermore, we interpret the numerically simulated synchronization in the framework of phase description. Since our proposed design is perfectly compatible with current silicon photonics fabrication processes, the synchronization of optical limit cycle oscillations will be implemented in future silicon photonic circuits.

preprint2020arXiv

Generation and Annihilation of Topologically-Protected Bound States in the Continuum and Circularly-Polarized States by Symmetry Breaking

We demonstrate by breaking the $C_{6}$ symmetry for higher-order at-$Γ$ bound states in the continuum (BICs) with topological charge $-2$ in photonic crystals, (i) deterministic generation of off-$Γ$ BICs from the at-$Γ$ BIC, and (ii) a variety of pair-creation and annihilation processes of circularly-polarized states with opposite topological charge and same handedness. These processes are well explained by the conservation of handedness-wise topological charges, showing topologically robustness of these phenomena. The results indicate a new control of topological aspect of far-field polarization vectors.

preprint2020arXiv

Observing exceptional point degeneracy of radiation with electrically pumped photonic crystal coupled-nanocavity lasers

Controlling gain and loss of coupled optical cavities can induce non-Hermitian degeneracies of eigenstates, called exceptional points (EPs). Various unconventional phenomena around EPs have been reported, and expected to incorporate extra functionalities into photonic devices. The eigenmode exactly under the EP degeneracy is also predicted to exhibit enhanced radiation. However, such responses have yet to be observed in on-chip lasers, because of both the limited controllability of their gain and loss and the lifting of degeneracy by pump-induced cavity detuning. Here, we report the first non-Hermitian nanophotonic platform based on two electrically pumped photonic crystal lasers and its spontaneous emission at an EP degeneracy. Systematically tuned and independent current injection to our wavelength-scale active heterostructure cavities enables us to demonstrate the clear EP phase transition of their spontaneous emission, accompanied with the spectral coalescence of coupled modes and reversed pump dependence of the intensity. Furthermore, we find experimentally and confirm theoretically the peculiar squared Lorentzian emission spectrum very near the exact EP, which indicates the four-fold enhancement of the photonic local density of states induced purely by the degeneracy. Our results open a new pathway to engineer the light-matter interaction by non-Hermiticity and explore larger reconfigurable laser arrays for further non-Hermitian features and physics.

preprint2019arXiv

Active topological photonics

Topological photonics has emerged as a novel route to engineer the flow of light. Topologically-protected photonic edge modes, which are supported at the perimeters of topologically-nontrivial insulating bulk structures, have been of particular interest as they may enable low-loss optical waveguides immune to structural disorder. Very recently, there is a sharp rise of interest in introducing gain materials into such topological photonic structures, primarily aiming at revolu-tionizing semiconductor lasers with the aid of physical mechanisms existing in topological physics. Examples of re-markable realizations are topological lasers with unidirectional light output under time-reversal symmetry breaking and topologically-protected polariton and micro/nano-cavity lasers. Moreover, the introduction of gain and loss provides a fascinating playground to explore novel topological phases, which are in close relevance to non-Hermitian and parity-time symmetric quantum physics and are in general difficult to access using fermionic condensed matter systems. Here, we review the cutting-edge research on active topological photonics, in which optical gain plays a pivotal role. We discuss recent realizations of topological lasers of various kinds, together with the underlying physics explaining the emergence of topological edge modes. In such demonstrations, the optical modes of the topological lasers are deter-mined by the dielectric structures and support lasing oscillation with the help of optical gain. We also address recent researches on topological photonic systems in which gain and loss themselves essentially influence on topological prop-erties of the bulk systems. We believe that active topological photonics provides powerful means to advance mi-cro/nanophotonics systems for diverse applications and topological physics itself as well.

preprint2019arXiv

Ultrafast and energy-efficient all-optical switching with graphene-loaded deep-subwavelength plasmonic waveguides

All-optical switches have attracted attention because they can potentially overcome the speed limitation of electric switches. However, ultrafast, energy-efficient all-optical switches have been challenging to realize due to the intrinsically small optical nonlinearity in existing materials. As a solution, we propose graphene-loaded deep-subwavelength plasmonic waveguides (30 nm x 20 nm). Thanks to extreme light confinement, we have significantly enhanced optical nonlinear absorption in graphene, and achieved ultrafast all-optical switching with a switching energy of 35 fJ and a switching time of 260 fs. The switching energy is four orders of magnitudes smaller than that in previous graphene-based devices and is the smallest value ever reported for any all-optical switch operating at a few picoseconds or less. This device can be efficiently connected to conventional Si waveguides and employed in Si photonic integrated circuits. We believe that this graphene-based device will pave the way towards on-chip ultrafast and energy-efficient photonic processing.

preprint2010arXiv

All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip

We demonstrate channel selective 0.1-Gb/s photo-receiver operation at telecom wavelength using a silicon high-Q photonic crystal nanocavity with a laterally integrated p-i-n diode. Due to the good crystal property of silicon the measured dark current is only 15 pA. The linear and nonlinear characteristics are investigated in detail, in which we found that the photo-current is enhanced of more than 100,000 due to the ultrahigh-Q (>100,000). With the help of two-photon absorption, which is visible at a surprisingly low input power of 10 nW, the quantum efficiency of this device reaches about 10%.