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Masato Hagihala

Masato Hagihala contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2022arXiv

Contrasting Magnetic Structures in SrLaCuSbO$_{6}$ and SrLaCuNbO$_{6}$: Spin-1/2 Quasi-Square-Lattice $J_1 {-} J_2$ Heisenberg Antiferromagnets

We report the magnetic properties of the double perovskites SrLaCuSbO$_6$ (SLCSO) and SrLaCuNbO$_6$ (SLCNO). The temperature dependence of the magnetic susceptibilities of both compounds shows a broad maximum characteristic of an $S\,=\,1/2$ square lattice Heisenberg antiferromagnet. Magnetic ordering occurs at $T_{\rm N}\,{=}\,13.6$ and 15.7 K for SLCSO and SLCNO, respectively. Neutron powder diffraction measurements reveal contrasting spin structures in both compounds. The spin structures of SLCSO and SLCNO below $T_{\rm N}$ are Néel antiferromagnetic and collinear antiferromagnetic, respectively. This result demonstrates that the nearest-neighbor interaction is dominant in SLCSO, whereas the next-nearest-neighbor interaction is dominant in SLCNO. The magnitude of the ordered moment was evaluated at 3.5 K to be $m\,{=}\,0.39(3)\,μ_{\rm B}$ for SLCSO and $0.37(1)\,μ_{\rm B}$ for SLCNO, which are significantly smaller than those calculated using linear spin wave theory. We infer that the small ordered moment is caused by the effect of exchange bond randomness arising from the site disorder of Sr and La ions.

preprint2022arXiv

Regulate the direct-indirect electronic band gap transition by electron-phonon interaction in BaSnO3

The neutron powder diffraction, specific heat, thermal conductivity, and Raman scattering measurements were presented to study the interplays of lattice, phonons and electrons of the Sr-doping Ba1-xSrxSnO3 (x was less than or equal to 0.1). Although Ba1-xSrxSnO3 kept the cubic lattice, the Raman spectra suggested a dynamic distortion at low temperature. The density functional theory was applied to analyze the electronic structures and phonon dispersions of Ba1-xSrxSnO3(x = 0, 0.0125), and the behaviors of electron bands around Fermi levels were discussed. According to the experimental and theoretical results, the Sr-doping played a significant role in tuning the indirect band gap of BaSnO3 and influenced the electron-phonon interaction.

preprint2021arXiv

Magnetism of Kitaev spin-liquid candidate material RuBr$_3$

The ruthenium halide $α$-RuCl$_{3}$ is a promising candidate for a Kitaev spin liquid. However, the microscopic model describing $α$-RuCl$_{3}$ is still debated partly because of a lack of analogue materials for $α$-RuCl$_{3}$, which prevents tracking of electronic properties as functions of controlled interaction parameters. Here, we report a successful synthesis of RuBr$_{3}$. The material RuBr$_{3}$~possesses BiI$_3$-type structure (space group: $R\overline{3}$) where Ru$^{3+}$ form an ideal honeycomb lattice. Although RuBr$_{3}$ has a negative Weiss temperature, it undergoes a zigzag antiferromagnetic transition at $T_\mathrm{N}=34$ K, as does $α$-RuCl$_{3}$. Our analyses indicate that the Kitaev and non-Kitaev interactions can be modified in ruthenium trihalides by changing the ligand sites, which provides a new platform for exploring Kitaev spin liquids.

preprint2020arXiv

Emergent spin-$1$ Haldane gap and ferroelectricity in a frustrated spin-$1/2$ ladder

We report experimental and theoretical evidence that Rb$_2$Cu$_2$Mo$_3$O$_{12}$ has a nonmagnetic tetramer ground state of a two-leg ladder comprising antiferromagnetically coupled frustrated spin-$1/2$ chains and exhibits a Haldane spin gap of emergent spin-1 pairs. Three spin excitations split from the spin-1 triplet by a Dzyaloshinskii-Moriya interaction are identified in inelastic neutron-scattering and electron spin resonance spectra. A tiny magnetic field generates ferroelectricity without closing the spin gap, indicating a novel class of ferroelectricity induced by a vector spin chirality order.

preprint2020arXiv

Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials

Chemical doping is one of the most important strategies for tuning electrical properties of semiconductors, particularly thermoelectric materials. Generally, the main role of chemical doping lies in optimizing the carrier concentration, but there can potentially be other important effects. Here, we show that chemical doping plays multiple roles for both electron and phonon transport properties in half-Heusler thermoelectric materials. With ZrNiSn-based half-Heusler materials as an example, we use high-quality single and polycrystalline crystals, various probes, including electrical transport measurements, inelastic neutron scattering measurement, and first-principles calculations, to investigate the underlying electron-phonon interaction. We find that chemical doping brings strong screening effects to ionized impurities, grain boundary, and polar optical phonon scattering, but has negligible influence on lattice thermal conductivity. Furthermore, it is possible to establish a carrier scattering phase diagram, which can be used to select reasonable strategies for optimization of the thermoelectric performance.