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Researcher profile

Masataka Imura

Masataka Imura contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallHuman-Computer Interactioncond-mat.mtrl-sciEmerging Technologiesphysics.app-ph

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Published work

5 published item(s)

preprint2022arXiv

Edge-Of-Chaos Learning Achieved by Ion-Electron Coupled Dynamics in an Ion-Gating Reservoir

Physical reservoir computing has recently been attracting attention for its ability to significantly reduce the computational resources required to process time-series data. However, the physical reservoirs that have been reported to date have had insufficient expression power, and most of them have a large volume, which makes their practical application difficult. Herein we describe the development of a Li+-electrolyte based ion-gating reservoir (IGR), with ion-electron coupled dynamics, for use in high performance physical reservoir computing. A variety of synaptic responses were obtained in response to past experience, which responses were stored as transient charge density patterns in an electric double layer, at the Li+-electrolyte/diamond interface. Performance, which was tested using a nonlinear autoregressive moving-average (NARMA) task, was found to be excellent, with a NMSE of 0.023 for NARMA2, which is the highest for any physical reservoir reported to date. The maximum Lyapunov exponent of the IGR was 0.0083: the edge of chaos state enabling the best computational capacity. The IGR described herein opens the way for high-performance and integrated neural network devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures

Field-effect transistors made of wide-bandgap semiconductors can operate at high voltages, temperatures and frequencies with low energy losses, and have been of increasing importance in power and high-frequency electronics. However, the poor performance of p-channel transistors compared with that of n-channel transistors has constrained the production of energy-efficient complimentary circuits with integrated n- and p-channel transistors. The p-type surface conductivity of hydrogen-terminated diamond offers great potential for solving this problem, but surface transfer doping, which is commonly believed to be essential for generating the conductivity, limits the performance of transistors made of hydrogen-terminated diamond because it requires the presence of ionized surface acceptors, which cause hole scattering. Here, we report on fabrication of a p-channel wide-bandgap heterojunction field-effect transistor consisting of a hydrogen-terminated diamond channel and hexagonal boron nitride ($h$-BN) gate insulator, without relying on surface transfer doping. Despite its reduced density of surface acceptors, the transistor has the lowest sheet resistance ($1.4$ k$Ω$) and largest on-current ($1600$ $μ$m mA mm$^{-1}$) among p-channel wide-bandgap transistors, owing to the highest hole mobility (room-temperature Hall mobility: $680$ cm$^2$V$^{-1}$s$^{-1}$). Importantly, the transistor also shows normally-off behavior, with a high on/off ratio exceeding $10^8$. These characteristics are suited for low-loss switching and can be explained on the basis of standard transport and transistor models. This new approach to making diamond transistors paves the way to future wide-bandgap semiconductor electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors

Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mobility is desirable for a reduced loss and high-speed operation. We have recently fabricated diamond FETs with a hexagonal-boron-nitride gate dielectric and observed a high mobility above 300 cm$^{2}$V$^{-1}$s$^{-1}$. In this study, we examine which scattering mechanism limits the mobility of our FETs through theoretical calculations. Our calculations reveal that the dominant carrier scattering is caused by surface charged impurities with the density of $\approx$1$\times10^{12}$ cm$^{-2}$, and suggest a possible increase in mobility over 1000 cm$^{2}$V$^{-1}$s$^{-1}$ by reducing the impurities.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Function + Action = Interaction

This article presents the mathematical background of general interactive systems. The first principle of designing a large system is to _divide and conquer_, which implies that we could possibly reduce human error if we divided a large system in smaller subsystems. Interactive systems are, however, often composed of many subsystems that are _organically_ connected to one another and thus difficult to divide. In other words, we cannot apply a framework of set theory to the programming of interactive systems. We can overcome this difficulty by applying a framework of category theory (Kleisli category) to the programming, but this requires highly abstract mathematics, which is not very popular. In this article we introduce the fundamental idea of category theory using only lambda calculus, and then demonstrate how it can be used in the practical design of an interactive system. Finally, we mention how this discussion relates to category theory.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Interactive Art To Go

Traditional artworks like paintings, photographs, or films can be reproduced by conventional media like printing or video. This makes visitors of museums possible to purchase postcards, posters, books, and DVDs of pictures and/or movies shown at the exhibition. However, newly developing arts so called interactive art, or new media art, has not been able to be reproduced due to limitation of functionalities of the conventional media. In this article, the authors report a novel approach of sharing such interactive art outside the exhibition, so that the visitors of the museum can take a copy to home, and even share it with non-visitors. The authors build up their new projector-and-camera (ProCam) based interactive artwork for exhibition at Museum of Contemporary Art Tokyo (MOT) by using Apple's iPhone. The exactly same software driving this artwork was downloadable from Apple's App Store -- thus all visitors or even non-visitors could enjoy the same experience at home or wherever they like.

0 citations0 reviewsNo code linkedOpen access