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Researcher profile

Martin Héritier

Martin Héritier contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.app-ph

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Published work

3 published item(s)

preprint2022arXiv

Soft-clamped silicon nitride string resonators at millikelvin temperatures

We demonstrate that soft-clamped silicon nitride strings with large aspect ratio can be operated at \si{\milli\kelvin} temperatures. The quality factors ($Q$) of two measured devices show consistent dependency on the cryostat temperature, with soft-clamped mechanical modes reaching $Q > 10^9$ at $46~\mathrm{mK}$. For low optical readout power, $Q$ is found to saturate, indicating good thermalization between the sample and the stage it is mounted on. Our best device exhibits a force sensitivity of $9.6~\mathrm{zN}/\sqrt{\mathrm{Hz}}$ and a thermal decoherence time of $0.38~\mathrm{s}$ which bode well for future applications such as nanomechanical force sensing and beyond.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Spatially resolved surface dissipation over metal and dielectric substrates

We report spatially resolved measurements of static and fluctuating electric fields over conductive (Au) and non-conductive (SiO2) surfaces. Using an ultrasensitive `nanoladder' cantilever probe to scan over these surfaces at distances of a few tens of nanometers, we record changes in the probe resonance frequency and damping that we associate with static and fluctuating fields, respectively. We find that the two quantities are spatially correlated and of similar magnitude for the two materials. We quantitatively describe the observed effects on the basis of trapped surface charges and dielectric fluctuations in an adsorbate layer. Our results provide direct, spatial evidence for surface dissipation in adsorbates that affects nanomechanical sensors, trapped ions, superconducting resonators, and color centers in diamond.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Membrane-based scanning force microscopy

We report the development of a scanning force microscope based on an ultra-sensitive silicon nitride membrane transducer. Our development is made possible by inverting the standard microscope geometry - in our instrument, the substrate is vibrating and the scanning tip is at rest. We present first topography images of samples placed on the membrane surface. Our measurements demonstrate that the membrane retains an excellent force sensitivity when loaded with samples and in the presence of a scanning tip. We discuss the prospects and limitations of our instrument as a quantum-limited force sensor and imaging tool.

0 citations0 reviewsNo code linkedOpen access