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Markus Münzenberg

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Published work

21 published item(s)

preprint2022arXiv

Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions

Delocalized carbon-based radical species with unpaired spin, such as phenalenyl (PLY) radical, opened avenues for developing multifunctional organic spintronic devices. Here we develop a novel technique based on a three-dimensional shadow mask and the in-situ deposition to fabricate PLY-, Cu-PLY-, and Zn-PLY-based organic magnetic tunnel junctions (OMTJs) with area 3x8 μm2 and improved morphology. The nonlinear and weakly temperature-dependent current-voltage (I-V) characteristics in combination with the low organic barrier height suggest tunneling as the dominant transport mechanism in the structurally and dimensionally optimized OMTJs. Cu-PLY-based OMTJs, show a significant magnetoresistance up to 14 percent at room temperature due to the formation of hybrid states at the metal-molecule interfaces called spinterface, which reveals the importance of spin-dependent interfacial modification in OMTJs design. In particular, Cu-PLY OMTJs shows a stable voltage-driven resistive switching response that suggests their use as a new viable and scalable platform for building molecular scale quantum memristors and processors.

preprint2021arXiv

Frequency-independent terahertz anomalous Hall effect in DyCo$_{5}$, Co$_{32}$Fe$_{68}$ and Gd$_{27}$Fe$_{73}$ thin films from DC to 40 THz

The anomalous Hall effect (AHE) is a fundamental spintronic charge-to-charge-current conversion phenomenon and closely related to spin-to-charge-current conversion by the spin Hall effect. Future high-speed spintronic devices will crucially rely on such conversion effects at terahertz (THz) frequencies. Here, we reveal that the AHE remains operative from DC up to 40 THz with a flat frequency response in thin films of three technologically relevant magnetic materials: DyCo$_{5}$, Co$_{32}$Fe$_{68}$ and Gd$_{27}$Fe$_{73}$. We measure the frequency-dependent conductivity-tensor elements $σ_{xx}$ and $σ_{yx}$ and find good agreement with DC measurements. Our experimental findings are fully consistent with ab-initio calculations of $σ_{yx}$ for CoFe and highlight the role of the large Drude scattering rate (~100 THz) of metal thin films, which smears out any sharp spectral features of the THz AHE. Finally, we find that the intrinsic contribution to the THz AHE dominates over the extrinsic mechanisms for the Co$_{32}$Fe$_{68}$ sample. The results imply that the AHE and related effects such as the spin Hall effect are highly promising ingredients of future THz spintronic devices reliably operating from DC to 40 THz and beyond.

preprint2021arXiv

Observation of multi-skyrmion objects created by size and density control in Ta/CoFeB/MgO films

Magnetic skyrmions are chiral spin textures with a nontrivial topology that offer a potential for future magnetic memory and storage devices. The controlled formation and adjustment of size and density of magnetic skyrmions in Ta/CoFeB/MgO trilayers is demonstrated. It is the ideal candidate for the use as a bottom electrode integration into CoFeB/MgO/CoFeB magnetic tunnel junctions. Varying the CoFeB thickness close to the out-of-plane to in-plane magnetic phase transition, we find that subtle energy contributions enable the skyrmion formation in a narrow thickness window, corresponding to only around 10 pm variation in CoFeB thickness. Using magneto-optical imaging with quantitative image processing, variations in skyrmion diameter and distribution below the Abbe limit can be analyzed. We demonstrate a high degree of diameter and density control. Zero-field stable skyrmions can be set with proper magnetic field initialization. This demonstrated tunability and degree of comprehension of skyrmion formation, paves the way for future skyrmion based magnetic memory. Moreover, we demonstrate a controlled merging of individual skyrmions to complex topological objects. We compare our results with the baby-Skyrme model, developed to describe the soliton nature, for any topological charge n, and demonstrate the ability to form multi-skyrmion objects. These objects will be interesting for fundamental mathematical studies of the topological behavior of solitons in the future.

preprint2021arXiv

Spintronic emitters for super-resolution in THz-spectral imaging

THz-spectroscopy is an attractive imaging tool for scientific research, especially in life science, offering non-destructive interaction with matter due to its low photon energies. However, wavelengths above $100μm$ principally limit its spatial resolution in the far-field by diffraction to this regime, making it not sufficient to image biological cells in the micrometer scale. Therefore, super-resolution imaging techniques are required to overcome this restriction. Near-field-imaging using spintronic emitters offers the most feasible approach because of its simplicity and potential for wide-ranging applications. In our study, we investigate THz-radiation generated by fs-laser-pulses in CoFeB/Pt heterostructures, based on spin currents, detected by commercial LT-GaAs Auston switches. The spatial resolution is evaluated applying a 2D scanning technique with motorized stages allowing scanning steps in the sub-micrometer range. By applying near-field imaging we can increase the spatial resolution to the dimensions of the laser spot size in the micrometer scale. For this purpose, the spintronic emitter is directly evaporated on a gold test pattern separated by a 300 nm spacer layer. Moving these structures with respect to the femtosecond laser spot which generates the THz radiation allows for resolution determination using the knife-edge method. We observe a full-width half-maximum THz beam diameter of $4.9(4)μ$m at 1 THz. The possibility to deposit spintronic emitter heterostructures on simple glass substrates makes them an interesting candidate for near-field imaging for a large number of applications.

preprint2021arXiv

The impact of metallic contacts on spin-polarized photocurrents in topological insulator $\text{Bi}_2\text{Se}_3$ nanowires

Recently, a new quantum phase, the topological insulator, has been vividly investigated in a variety of materials. Its unique bandstructure allows for optical generation and control of spin-polarized currents based on the circular photogalvanic effect. In this paper, we generate and distinguish the different photocurrent contributions via the the polarization of the driving light wave. We discuss the helicity-dependent spin-polarized current and the polarization independent thermoelectric current as spatially resolved maps, focusing on the influence of the topological insulator/metallic contact interface. We observe for both current contributions a significant enhancement of the current values at the topological insulator/metallic contact interface and moreover a dipole-like distribution of the spin-polarized current close to the contacts. We discuss the general behavior of the thermovoltage as a three-material Seebeck effect and explain the enhanced values by the acceleration of the photoelectrons generated in the space charge region of the topological insulator/metallic contact interface. Furthermore, we interpret the temperature gradient together with the spin Nernst effect as a possible origin for the enhancement and dipole-like distribution of the spin-polarized current.

preprint2016arXiv

Comparison of laser induced and intrinsic tunnel magneto-Seebeck effect in CoFeB/MgAl$_2$O$_4$ and CoFeB/MgO magnetic tunnel junctions

We present a comparison of the tunnel magneto-Seebeck effect for laser induced and intrinsic heating. Therefore, Co$_{40}$Fe$_{40}$B$_{20}$/MgAl$_2$O$_4$ and Co$_{25}$Fe$_{55}$B$_{20}$/MgO magnetic tunnel junctions have been prepared. The TMS ratio of 3\,\% in case of the MAO MTJ agrees well with ratios found for other barrier materials, while the TMS ratio of 23\,\% of the MgO MTJ emphasizes the influence of the CoFe composition. We find results using the intrinsic method that differ in sign and magnitude in comparison to the results of the laser heating. The intrinsic contributions can alternatively be explained by the Brinkman model and the given junction properties. Especially, we are able to demonstrate that the symmetric contribution is solely influenced by the barrier asymmetry. Thus, we conclude that the symmetry analysis used for the intrinsic method is not suitable to unambiguously identify an intrinsic tunnel magneto-Seebeck effect.

preprint2015arXiv

Ultrafast photocurrents at the surface of the three-dimensional topological insulator $\mathrm{Bi}_2\mathrm{Se}_3$

Topological insulators constitute a new and fascinating class of matter with insulating bulk yet metallic surfaces that host highly mobile charge carriers with spin-momentum locking. Remarkably, the direction and magnitude of surface currents can be controlled with tailored light beams, but the underlying mechanisms are not yet well understood. To directly resolve the "birth" of such photocurrents we need to boost the time resolution to the scale of elementary scattering events ($\sim$ 10 fs). Here, we excite and measure photocurrents in the three-dimensional model topological insulator $\mathrm{Bi}_2\mathrm{Se}_3$ with a time resolution as short as 20 fs by sampling the concomitantly emitted broadband THz electromagnetic field from 1 to 40 THz. Remarkably, the ultrafast surface current response is dominated by a charge transfer along the Se-Bi bonds. In contrast, photon-helicity-dependent photocurrents are found to have orders of magnitude smaller magnitude than expected from generation scenarios based on asymmetric depopulation of the Dirac cone. Our findings are also of direct relevance for optoelectronic devices based on topological-insulator surface currents.

preprint2014arXiv

Controlling boron redistribution in CoFeB/MgO magnetic tunnel junctions during annealing by variation of cap layer materials and MgO deposition methods

Magnetic tunnel junctions with crystalline MgO tunnel barrier and amorphous CoFeB electrodes received much attention due to their high tunnel magneto resistance ratio at room temperature. One important parameter for achieving high tunnel magneto resistance ratios is to control the boron diffusion from the electrodes especially during post growth annealing. By high resolution transmission electron microscopy and electron energy loss spectroscopy techniques we show that the cap layer material adjacent to the electrodes and the MgO deposition method are crucial to control boron redistribution. It is pointed out, that Ta cap layers acts as sinks for boron during annealing in contrast to Ru layers. Furthermore, radio frequency sputtered MgO tunneling barriers contain a rather high concentraion of boron in trigonal [BO$_3$]$^{3-}$ - environment after annealing in contrast to electron beam evaporated MgO which is virtually free from any boron. Our data further indicate that neither boron nor oxygen-vacancy-related gap states in the bulk of MgO barriers affect spin polarized transport for tunnel magneto resistance ratios at the level of 200%.

preprint2014arXiv

Generation of magnonic spin wave traps

Spatially resolved measurements of the magnetization dynamics induced by an intense laser pump-pulse reveal that the frequencies of resulting spin wave modes depend strongly on the distance to the pump center. This can be attributed to a laser generated temperature profile. On a CoFeB thin film magnonic crystal, Damon-Eshbach modes are expected to propagate away from the point of excitation. The experiments show that this propagation is frustrated by the strong temperature gradient

preprint2014arXiv

On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect

Thermoelectric effects in magnetic tunnel junctions are currently an attractive research topic. Here, we demonstrate that the tunnel magneto-Seebeck effect (TMS) in CoFeB/MgO/CoFeB tunnel junctions can be switched on to a logic 1 state and off to 0 by simply changing the magnetic state of the CoFeB electrodes. We enable this new functionality of magnetic tunnel junctions by combining a thermal gradient and an electric field. This new technique unveils the bias-enhanced tunnel magneto-Seebeck effect, which can serve as the basis for logic devices or memories in a green information technology with a pure thermal write and read process. Furthermore, the thermally generated voltages that are referred to as the Seebeck effect are well known to sensitively depend on the electronic structure and therefore have been valued in solid-state physics for nearly one hundred years. Here, we lift Seebeck's historic discovery from 1821 to a new level of current spintronics. Our results show that the signal crosses zero and can be adjusted by tuning a bias voltage that is applied between the electrodes of the junction; hence, the name of the effect is bias-enhanced tunnel magneto-Seebeck effect (bTMS). Via the spin- and energy-dependent transmission of electrons in the junction, the bTMS effect can be configured using the bias voltage with much higher control than the tunnel magnetoresistance (TMR) and even completely suppressed for only one magnetic configuration, which is either parallel (P) or anti-parallel (AP). This option allows a readout contrast for the magnetic information of -3000% at room temperature while maintaining a large signal for one magnetic orientation. This contrast is much larger than the value that can be obtained using the TMR effect. Moreover, our measurements are a step towards the experimental realization of high TMS ratios, which are predicted for specific Co-Fe compositions.

preprint2013arXiv

Parameter space for thermal spin-transfer torque

Thermal spin-transfer torque describes the manipulation of the magnetization by the application of a heat flow. The effect has been calculated theoretically by Jia et al. in 2011. It is found to require large temperature gradients in the order of Kelvins across an ultra thin MgO barrier. In this paper, we present results on the fabrication and the characterization of magnetic tunnel junctions with 3 monolayer thin MgO barriers. The quality of the interfaces at different growth conditions is studied quantitatively via high-resolution transmission electron microscopy imaging. We demonstrate tunneling magneto resistance ratios of up to 55% to 64% for 3 to 4 monolayer barrier thickness. Magnetic tunnel junctions with perpendicular magnetization anisotropy show spin-transfer torque switching with a critical current of 0.2 MA/cm$^2$. The thermally generated torque is calculated ab initio using the Korringa-Kohn-Rostoker and non-equilibrium Green's function method. Temperature gradients generated from femtosecond laser pulses were simulated using COMSOL, revealing gradients of 20 K enabling thermal spin-transfer-torque switching.

preprint2013arXiv

Spin-transfer torque switching below 20 kA/cm$^2$ in perpendicular magnetic tunnel junctions

We demonstrate the reduction of critical spin-transfer torque (STT) switching currents in Co-Fe-B/MgO based magnetic tunnel junctions (MTJ) with perpendicular magnetization anisotropy (PMA). The junctions yield tunnel magnetoresistance (TMR) ratios of up to 64% at 4 monolayer (ML) tunnel barrier thickness. In this paper, the reduction of the critical switching current density is studied. By optimizing the applied bias field during DC-STT measurements, ultra low critical switching current densities of less than 20 kA/cm$^2$, even down to 9 kA/cm$^2$, are found. With the reduced switching currents, our samples are ideal candidates for further experimental studies such as the theoretical predicted thermally driven spin-transfer torque effect.

preprint2013arXiv

Time-resolved measurement of the tunnel magneto-Seebeck effect in a single magnetic tunnel junction

Recently, several groups have reported spin-dependent thermoelectric effects in magnetic tunnel junctions. In this paper, we present a setup for time-resolved measurements of thermovoltages and thermocurrents of a single micro- to nanometer-scaled tunnel junction. An electrically modulated diode laser is used to create a temperature gradient across the tunnel junction layer stack. This laser modulation technique enables the recording of time-dependent thermovoltage signals with a temporal resolution only limited by the preamplifier for the thermovoltage. So far, time-dependent thermovoltage could not be interpreted. Now, with the setup presented in this paper, it is possible to distinguish different Seebeck voltage contributions to the overall measured voltage signal in the μs time regime. A model circuit is developed that explains those voltage contributions on different sample types. Further, it will be shown that a voltage signal arising from the magnetic tunnel junction can only be observed when the laser spot is directly centered on top of the magnetic tunnel junction, which allows a lateral separation of the effects.

preprint2012arXiv

Insights into ultrafast demagnetization in pseudo-gap half metals

Interest in femtosecond demagnetization experiments was sparked by Bigot's discovery in 1995. These experiments unveil the elementary mechanisms coupling the electrons' temperature to their spin order. Even though first quantitative models describing ultrafast demagnetization have just been published within the past year, new calculations also suggest alternative mechanisms. Simultaneously, the application of fast demagnetization experiments has been demonstrated to provide key insight into technologically important systems such as high spin polarization metals, and consequently there is broad interest in further understanding the physics of these phenomena. To gain new and relevant insights, we perform ultrafast optical pump-probe experiments to characterize the demagnetization processes of highly spin-polarized magnetic thin films on a femtosecond time scale. Previous studies have suggested shifting the Fermi energy into the center of the gap by tuning the number of electrons and thereby to study its influence on spin-flip processes. Here we show that choosing isoelectronic Heusler compounds (Co2MnSi, Co2MnGe and Co2FeAl) allows us to vary the degree of spin polarization between 60% and 86%. We explain this behavior by considering the robustness of the gap against structural disorder. Moreover, we observe that Co-Fe-based pseudo gap materials, such as partially ordered Co-Fe-Ge alloys and also the well-known Co-Fe-B alloys, can reach similar values of the spin polarization. By using the unique features of these metals we vary the number of possible spin-flip channels, which allows us to pinpoint and control the half metals electronic structure and its influence onto the elementary mechanisms of ultrafast demagnetization.

preprint2012arXiv

Photo-magnonics

In the framework of magnonics all-optical femtosecond laser experiments are used to study spin waves and their relaxation paths. Magnonic crystal structures based on antidots allow the control over the spin-wave modes. In these two-dimensional magnetic metamaterials with periodicities in the wave-length range of dipolar spin waves the spin-wave bands and dispersion are modified. Hence, a specific selection of spin-wave modes excited by laser pulses is possible. Different to photonics, the modes depend strongly on the strength of the magneto-static potential at around each antidot site - the dipolar field. While this may lead to a mode localization, also for filling fractions around or below 10%, Bloch states are found in low damping ferromagnetic metals. In this chapter, an overview of these mechanisms is given and the connection to spin-wave band spectra calculated from an analytical model is established. Namely, the plane-wave method yields flattened bands as well as band gaps at the antidot lattice Brillouin zone boundary.

preprint2012arXiv

Spin-wave modes and band structure of rectangular CoFeB antidot lattices

We present an investigation of rectangular antidot lattices in a CoFeB film. Magnonic band structures are numerically calculated, and band gaps are predicted which shift in frequency by 0.9 GHz when rotating the external field from the long to the short axis of the unit cell. We demonstrate by time-resolved experiments that magnonic dipolar surface modes are split in frequency by 0.6 GHz which agrees well with the theoretical prediction. These findings provide the basis for directional spin-wave filtering with magnonic devices.

preprint2011arXiv

Seebeck Effect in Magnetic Tunnel Junctions

Creating temperature gradients in magnetic nanostructures has resulted in a new research direction, i.e., the combination of magneto- and thermoelectric effects. Here, we demonstrate the observation of one important effect of this class: the magneto-Seebeck effect. It is observed when a magnetic configuration changes the charge based Seebeck coefficient. In particular, the Seebeck coefficient changes during the transition from a parallel to an antiparallel magnetic configuration in a tunnel junction. In that respect, it is the analog to the tunneling magnetoresistance. The Seebeck coefficients in parallel and antiparallel configuration are in the order of the voltages known from the charge-Seebeck effect. The size and sign of the effect can be controlled by the composition of the electrodes' atomic layers adjacent to the barrier and the temperature. Experimentally, we realized 8.8 % magneto-Seebeck effect, which results from a voltage change of about -8.7 μV/K from the antiparallel to the parallel direction close to the predicted value of -12.1 μV/K.

preprint2011arXiv

The building blocks of magnonics

Novel material properties can be realized by designing waves' dispersion relations in artificial crystals. The crystal's structural length scales may range from nano- (light) up to centimeters (sound waves). Because of their emergent properties these materials are called metamaterials. Different to photonics, where the dielectric constant dominantly determines the index of refraction, in a ferromagnet the spin-wave index of refraction can be dramatically changed already by the magnetization direction. This allows a different flexibility in realizing dynamic wave guides or spin-wave switches. The present review will give an introduction into the novel functionalities of spin-wave devices, concepts for spin-wave based computing and magnonic crystals. The parameters of the magnetic metamaterials are adjusted to the spin-wave k-vector such that the magnonic band structure is designed. However, already the elementary building block of an antidot lattice, the singular hole, owns a strongly varying internal potential determined by its magnetic dipole field and a localization of spin-wave modes. Photo-magnonics reveal a way to investigate the control over the interplay between localization and delocalization of the spin-wave modes using femtosecond lasers, which is a major focus of this review. We will discuss the crucial parameters to realize free Bloch states and how, by contrast, a controlled localization might allow to gradually turn on and manipulate spin-wave interactions in spin-wave based devices in the future.

preprint2010arXiv

Magnonic spin-wave modes in CoFeB antidot lattices

In this manuscript time-resolved magneto-optical Kerr effect experiments on structured CoFeB films are presented. The geometries considered are two dimensional square lattices of micrometer-sized antidots, fabricated by a focused ion beam. The spin-wave spectra of these magnonic crystals show a novel precessional mode, which can be related to a Bloch state at the zone boundary. Additionally, another magnetic mode of different nature appears, whose frequency displays no dependence on the externally applied magnetic field. These findings are interpreted as delocalized and localized modes, respectively.

preprint2010arXiv

Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions

Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia, and magnesia-alumina bilayer systems. The highest tunnel magnetoresistance ratios we found were 73% for alumina and 323% for magnesia-based tunnel junctions. Additionally, tunnel junctions with a unified layer stack were prepared for the three different barriers. In these systems, the tunnel magnetoresistance ratios at optimum annealing temperatures were found to be 65% for alumina, 173% for magnesia, and 78% for the composite tunnel barriers. The similar tunnel magnetoresistance ratios of the tunnel junctions containing alumina provide evidence that coherent tunneling is suppressed by the alumina layer in the composite tunnel barrier.

preprint2010arXiv

Unusual spin-wave population in nickel after femtosecond laser pulse excitation

The spin-wave relaxation mechanisms after intense laser excitation in ferromagnetic nickel films are investigated with all-optical pump-probe experiments. Uniform precession (Kittel mode), Damon-Eshbach surface modes and perpendicular standing spin waves can be identified by their dispersion f(H). However, different to other ferromagnets f(H) deviates from the expected behavior. Namely, a mode discontinuity is observed, that can be attributed to a non-linear process. Above a critical field the power spectrum reveals a redistribution of the energy within the spin-wave spectrum populated.