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Günter Reiss

Günter Reiss appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.othercond-mat.str-el

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Published work

50 published item(s)

preprint2019arXiv

Resistive contribution in electrical switching experiments with antiferromagnets

Recent research demonstrated the electrical switching of antiferromagnets via intrinsic spin-orbit torque or the spin Hall effect of an adjacent heavy metal layer. The electrical readout is typically realized by measuring the transverse anisotropic magnetoresistance at planar cross- or star-shaped devices with four or eight arms, respectively. Depending on the material, the current density necessary to switch the magnetic state can be large, often close to the destruction threshold of the device. We demonstrate that the resulting electrical stress changes the film resistivity locally and thereby breaks the fourfold rotational symmetry of the conductor. This symmetry breaking due to film inhomogeneity produces signals, that resemble the anisotropic magnetoresistance and is experimentally seen as a "saw-tooth"-shaped transverse resistivity. This artifact can persist over many repeats of the switching experiment and is not easily separable from the magnetic contribution. We discuss the origin of the artifact, elucidate the role of the film crystallinity, and propose approaches how to separate the resistive contribution from the magnetic contribution.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Comparison of laser induced and intrinsic tunnel magneto-Seebeck effect in CoFeB/MgAl$_2$O$_4$ and CoFeB/MgO magnetic tunnel junctions

We present a comparison of the tunnel magneto-Seebeck effect for laser induced and intrinsic heating. Therefore, Co$_{40}$Fe$_{40}$B$_{20}$/MgAl$_2$O$_4$ and Co$_{25}$Fe$_{55}$B$_{20}$/MgO magnetic tunnel junctions have been prepared. The TMS ratio of 3\,\% in case of the MAO MTJ agrees well with ratios found for other barrier materials, while the TMS ratio of 23\,\% of the MgO MTJ emphasizes the influence of the CoFe composition. We find results using the intrinsic method that differ in sign and magnitude in comparison to the results of the laser heating. The intrinsic contributions can alternatively be explained by the Brinkman model and the given junction properties. Especially, we are able to demonstrate that the symmetric contribution is solely influenced by the barrier asymmetry. Thus, we conclude that the symmetry analysis used for the intrinsic method is not suitable to unambiguously identify an intrinsic tunnel magneto-Seebeck effect.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Detection of DC currents and resistance measurements in longitudinal spin Seebeck effect experiments on Pt/YIG and Pt/NFO

In this work we investigated thin films of the ferrimagnetic insulators YIG and NFO capped with thin Pt layers in terms of the longitudinal spin Seebeck effect (LSSE). The electric response detected in the Pt layer under an out-of-plane temperature gradient can be interpreted as a pure spin current converted into a charge current via the inverse spin Hall effect. Typically, the transverse voltage is the quantity investigated in LSSE measurements (in the range of μV). Here, we present the directly detected DC current (in the range of nA) as an alternative quantity. Furthermore, we investigate the resistance of the Pt layer in the LSSE configuration. We found an influence of the test current on the resistance. The typical shape of the LSSE curve varies for increasing test currents.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Grain size correlated rotatable magnetic anisotropy in polycrystalline exchange bias systems

Angular resolved measurements of the exchange bias field and the coercive field are a powerful tool to distinguish between different competing magnetic anisotropies in polycrystalline exchange bias layer systems. No simple analytical model is as yet available, which considers time dependent effects like enhanced coercivity arising from the grain size distribution of the antiferromagnet. In this work we expand an existing model class describing polycrystalline exchange bias systems by a rotatable magnetic anisotropy term to describe grain size correlated effects. Additionally, we performed angular resolved magnetization curve measurements using vectorial magnetooptic Kerr magnetometry. Comparison of the experimental data with the proposed model shows excellent agreement and reveals the ferromagnetic anisotropy and properties connected to the grain size distribution of the antiferromagnet. Therefore, a distinction between the different influences on coercivity and anisotropy becomes available.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Low Gilbert damping in Co2FeSi and Fe2CoSi films

Thin highly textured Fe$_{\mathrm{1+x}}$Co$_{\mathrm{2-x}}$Si ($0 \leq$ x $\leq 1$) films were prepared on MgO (001) substrates by magnetron co-sputtering. The magneto-optic Kerr effect (MOKE) and ferromagnetic resonance (FMR) measurements were used to investigate the composition dependence of the magnetization, the magnetic anisotropy, the gyromagnetic ratio and the relaxation of the films. The effective magnetization for the thin Fe$_{\mathrm{1+x}}$Co$_{\mathrm{2-x}}$Si films, determined by FMR measurements, are consistent with the Slater Pauling prediction. Both MOKE and FMR measurements reveal a pronounced fourfold anisotropy distribution for all films. In addition we found a strong influence of the stoichiometry on the anisotropy as the cubic anisotropy strongly increases with increasing Fe concentration. The gyromagnetic ratio is only weakly dependent on the composition. We find low Gilbert damping parameters for all films with values down to $0.0012\pm0.00012$ for Fe$_{1.75}$Co$_{1.25}$Si. The effective damping parameter for Co$_2$FeSi is found to be $0.0018\pm 0.0004$. We also find a pronounced anisotropic relaxation, which indicates significant contributions of two-magnon scattering processes that is strongest along the easy axes of the films. This makes thin Fe$_{\mathrm{1+x}}$Co$_{\mathrm{2-x}}$Si films ideal materials for the application in STT-MRAM devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Static Magnetic Proximity Effect in Pt Layers on Sputter-Deposited NiFe2O4 and on Fe of Various Thicknesses Investigated by XRMR

The longitudinal spin Seebeck effect is detected in sputter-deposited NiFe2O4 films using Pt as a spin detector and compared to previously investigated NiFe2O4 films prepared by chemical vapor deposition. Anomalous Nernst effects induced by the magnetic proximity effect in Pt can be excluded for the sputter-deposited NiFe2O4 films down to a certain limit, since x-ray resonant magnetic reflectivity measurements show no magnetic response down to a limit of 0.04 μB per Pt atom comparable to the case of the chemicallydeposited NiFe2O4 films. These differently prepared films have various thicknesses. Therefore, we further studied Pt/Fe reference samples with various Fe thicknesses and could confirm that the magnetic proximity effect is only induced by the interface properties of the magnetic material.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Structural, magnetic and electrical properties of sputter deposited Mn-Fe-Ga thin films

We investigated structural, magnetic and electrical properties of sputter deposited Mn-Fe-Ga compounds. The crystallinity of the Mn-Fe-Ga thin films was confirmed using x-ray diffraction. X-ray reflection and atomic force microscopy measurements were utilized to investigate the surface properties, roughness, thickness and density of the deposited Mn-Fe-Ga. Depending on the stoichiometry, as well as the used substrates (SrTiO3 (001) and MgO (001)) or buffer layer (TiN) the Mn-Fe-Ga crystallizes in the cubic or the tetragonally distorted phase. Anomalous Hall effect and alternating gradient magnetometry measurements confirmed strong perpendicular magnetocrystalline anisotropy. Low saturation magnetization and hard magnetic behavior was reached by tuning the composition. Temperature dependent anomalous Hall effect measurements in a closed cycle He-cryostat showed a slight increase in coercivity with decreasing temperature (300K to 2K). TiN buffered Mn2.7Fe0.3Ga revealed sharper switching of the magnetization compared to the unbuffered layers.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Temperature dependence of the spin Hall angle and switching current in the nc-W(O)/CoFeB/MgO system with perpendicular magnetic anisotropy

We investigated the temperature dependence of the switching current for a perpendicularly magnetized CoFeB film deposited on a nanocrystalline tungsten film with large oxygen content: nc-W(O). The spin Hall angle $|Θ_\mathrm{SH}| \approx 0.22$ is independent of temperature, whereas the switching current increases strongly at low temperature. We show that the nc-W(O) is insensitive to annealing. It thus can be a good choice for the integration of spin Hall driven writing of information in magnetic memory or logic devices that require a high-temperature annealing process during fabrication.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Titanium Nitride as a Seed Layer for Heusler Compounds

Titanium nitride (TiN) shows low resistivity at room temperature, high thermal stability and thus has the potential to serve as seed layer in magnetic tunnel junctions. High quality TiN thin films with regard to the crystallographic and electrical properties were grown and characterized by X-ray diffraction and 4-terminal transport measurements. Element specific X-ray absorption spectroscopy revealed pure TiN in the bulk. To investigate the influence of a TiN seed layer on a ferro(i)magnetic bottom electrode, an out-of-plane magnetized Mn2.45Ga as well as in- and out-of-plane magnetized Co2FeAl thin films were deposited on a TiN buffer, respectively. The magnetic properties were investigated using a superconducting quantum interference device (SQUID) and anomalous Hall effect (AHE) for Mn2.45Ga. Magneto optical Kerr effect (MOKE) measurements were carried out to investigate the magnetic properties of Co2FeAl. TiN buffered Mn2.45Ga thin films showed higher coercivity and squareness ratio compared to unbuffered samples. The Heusler compound Co2FeAl showed already good crystallinity when grown at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Room temperature exchange bias in BiFeO3 / Co-Fe bilayers

Thin highly epitaxial BiFeO$_3$ films were prepared on SrTiO$_3$ (100) substrates by reactive magnetron co-sputtering. Detailed MOKE measurements on BiFeO$_3$/Co-Fe bilayers were performed to investigate the exchange bias as a function of the films thicknesses and Co-Fe stoichiometries. We found a maximum exchange bias of H$_{\mathrm{eb}}$=92 Oe and a coercive field of H$_{\mathrm{c}}$=89 Oe for a 12.5 nm thick BiFeO$_3$ film with a 2 nm thick Co layer. The unidirectional anisotropy is clearly visible in in-plane rotational MOKE measurements. AMR measurements reveal a strongly increasing coercivity with decreasing temperature, but no significant change in the exchange bias field.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Sign change in the tunnel magnetoresistance of Fe3O4/MgO/Co-Fe-B magnetic tunnel junctions depending on the annealing temperature and the interface treatment

Magnetite (Fe3O4) is an eligible candidate for magnetic tunnel junctions (MTJs) since it shows a high spin polarization at the Fermi level as well as a high Curie temperature of 585°C. In this study, Fe3O4/MgO/Co-Fe-B MTJs were manufactured. A sign change in the TMR is observed after annealing the MTJs at temperatures between 200°C and 280°C. Our findings suggest an Mg interdiffusion from the MgO barrier into the Fe3O4 as the reason for the change of the TMR. Additionally, different treatments of the magnetite interface (argon bombardment, annealing at 200°C in oxygen atmosphere) during the preparation of the MTJs have been studied regarding their effect on the performance of the MTJs. A maximum TMR of up to -12% could be observed using both argon bombardment and annealing in oxygen atmosphere, despite exposing the magnetite surface to atmospheric conditions before the deposition of the MgO barrier.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Static magnetic proximity effect in Pt/Ni$_{1-x}$Fe$_x$ bilayers investigated by x-ray resonant magnetic reflectivity

We present x-ray resonant magnetic reflectivity (XRMR) as a very sensitive tool to detect proximity induced interface spin polarization in Pt/Fe, Pt/Ni$_{33}$Fe$_{67}$, Pt/Ni$_{81}$Fe$_{19}$ (permalloy), and Pt/Ni bilayers. We demonstrate that a detailed analysis of the reflected x-ray intensity gives insight in the spatial distribution of the spin polarization of a non-magnetic metal across the interface to a ferromagnetic layer. The evaluation of the experimental results with simulations based on optical data from ab initio calculations provides the induced magnetic moment per Pt atom in the spin polarized volume adjacent to the ferromagnet. We find the largest spin polarization in Pt/Fe and a much smaller magnetic proximity effect in Pt/Ni. Additional XRMR experiments with varying photon energy are in good agreement with the theoretical predictions for the energy dependence of the magnetooptic parameters and allow identifying the optical dispersion $δ$ and absorption $β$ across the Pt L3-absorption edge.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Static magnetic proximity effect in Pt/NiFe2O4 and Pt/Fe bilayers investigated by x-ray resonant magnetic reflectivity

The spin polarization of Pt in Pt/NiFe2O4 and Pt/Fe bilayers is studied by interface-sensitive x-ray resonant magnetic reflectivity to investigate static magnetic proximity effects. The asymmetry ratio of the reflectivity was measured at the Pt L3 absorption edge using circular polarized x-rays for opposite directions of the magnetization at room temperature. The results of the 2% asymmetry ratio for Pt/Fe bilayers are independent of the Pt thickness between 1.8 and 20 nm. By comparison with ab initio calculations, the maximum magnetic moment per spin polarized Pt atom at the interface is determined to be $(0.6\pm0.1)\,μ_{B}$ for Pt/Fe. For Pt/NiFe2O4 the asymmetry ratio drops below the sensitivity limit of $0.02\,μ_{B}$ per Pt atom. Therefore, we conclude, that the longitudinal spin Seebeck effect recently observed in Pt/NiFe2O4 is not influenced by a proximity induced anomalous Nernst effect.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Longitudinal spin Seebeck effect contribution in transverse spin Seebeck effect experiments in Pt/YIG and Pt/NFO

We investigate the inverse spin Hall voltage of a 10nm thin Pt strip deposited on the magnetic insulators Y3Fe5O12 (YIG) and NiFe2O4 (NFO) with a temperature gradient in the film plane. We observe characteristics typical of the spin Seebeck effect, although we do not observe a change of sign of the voltage at the Pt strip when it is moved from hot to cold side, which is believed to be the most striking feature of the transverse spin Seebeck effect. Therefore, we relate the observed voltages to the longitudinal spin Seebeck effect generated by a parasitic out-of-plane temperature gradient, which can be simulated by contact tips of different material and heat conductivities and by tip heating. This work gives new insights into the interpretation of transverse spin Seebeck effect experiments, which are still under discussion.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Multiple phases in sputtered Cr2CoGa films

By magnetron co-sputtering, thin films of a nominal Cr2CoGa compound were deposited on MgO and MgAl2O4. To achieve crystallisation in the inverse Heusler structure, different heat treatments were tested. Instead of the inverse Heusler structure, we observed phase separation and precipitate formation in dependence on the heat treatment. The main precipitate is Cr3Ga in A15 structure. The remainder forms Co-rich CoGa in the B2 structure and possibly Cr-rich CoCr in the sigma-phase.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect

Thermoelectric effects in magnetic tunnel junctions are currently an attractive research topic. Here, we demonstrate that the tunnel magneto-Seebeck effect (TMS) in CoFeB/MgO/CoFeB tunnel junctions can be switched on to a logic 1 state and off to 0 by simply changing the magnetic state of the CoFeB electrodes. We enable this new functionality of magnetic tunnel junctions by combining a thermal gradient and an electric field. This new technique unveils the bias-enhanced tunnel magneto-Seebeck effect, which can serve as the basis for logic devices or memories in a green information technology with a pure thermal write and read process. Furthermore, the thermally generated voltages that are referred to as the Seebeck effect are well known to sensitively depend on the electronic structure and therefore have been valued in solid-state physics for nearly one hundred years. Here, we lift Seebeck's historic discovery from 1821 to a new level of current spintronics. Our results show that the signal crosses zero and can be adjusted by tuning a bias voltage that is applied between the electrodes of the junction; hence, the name of the effect is bias-enhanced tunnel magneto-Seebeck effect (bTMS). Via the spin- and energy-dependent transmission of electrons in the junction, the bTMS effect can be configured using the bias voltage with much higher control than the tunnel magnetoresistance (TMR) and even completely suppressed for only one magnetic configuration, which is either parallel (P) or anti-parallel (AP). This option allows a readout contrast for the magnetic information of -3000% at room temperature while maintaining a large signal for one magnetic orientation. This contrast is much larger than the value that can be obtained using the TMR effect. Moreover, our measurements are a step towards the experimental realization of high TMS ratios, which are predicted for specific Co-Fe compositions.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Phase separation in Fe2CrSi thin films

Thin films of a nominal Fe2CrSi alloy have been deposited by magnetron co-sputtering with various heat treatments on MgO and MgAl2O4 substrates. After heat treatment, the films were found to decompose into a nearly epitaxial Fe3Si film with the D0$_3$ structure and Cr3Si precipitates with the A15 structure. We explain the experimental results on the basis of ab initio calculations, which reveal that this decomposition is energetically highly favorable.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Tunneling magnetoresistance devices based on topological insulators: Ferromagnet/insulator/topological-insulator junctions employing Bi$_{2}$Se$_{3}$

We theoretically investigate tunneling magnetoresistance (TMR) devices, which are probing the spin-momentum coupled nature of surface states of the three-dimensional topological insulator Bi$_{2}$Se$_{3}$. Theoretical calculations are performed based on a realistic tight-binding model for Bi$_{2}$Se$_{3}$. We study both three dimensional devices, which exploit the surface states of Bi$_{2}$Se$_{3}$, as well as two-dimensional devices, which exploit the edge states of thin Bi$_{2}$Se$_{3}$ strips. We demonstrate that the material properties of Bi$_{2}$Se$_{3}$ allow a TMR ratio at room temperature of the order of 1000%. Analytical formulas are derived that allow a quick estimate of the achievable TMR ratio in these devices. The devices can be used to measure the spin polarization of the topological surface states as an alternative to spin-ARPES. Unlike TMR devices based on magnetic tunnel junctions the present devices avoid the use of a second ferromagnetic electrode whose magnetization needs to be pinned.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Backhopping effect in magnetic tunnel junctions: comparison between theory and experiment

We report on the magnetic switching and backhopping effects due to spin-transfer-torque in magnetic tunnel junctions. Experimental data on the current-induced switching in junctions with MgO tunnel barrier reveal a random back-and-forth switching between the magnetization states, which appears when the current direction favors the parallel magnetic configuration. The effect depends on the barrier thickness $t_b$, and is not observed in tunnel junctions with very thin MgO tunnel barriers, $t_b$ $<$ 0.95 nm. Switching dependence on the bias voltage and barrier thickness is explained in terms of the macrospin model, with the magnetization dynamics described by the modified Landau-Lifshitz-Gilbert equation. Numerical simulations indicate that the competition between in-plane and out-of-plane torque components can result at high bias voltages in a non-deterministic switching behavior, in agreement with experimental observations. When the barrier thickness is reduced, the overall coupling between the magnetic layers across the barrier becomes ferromagnetic, which suppresses the backhopping effect.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electronic structure and optical band gap determination of NiFe2O4

In a theoretical study we investigate the electronic structure and the band gap of the inverse spinel ferrite NiFe2O4. The experimental optical absorption spectrum is accurately reproduced by fitting the Tran-Blaha parameter in the modified Becke-Johnson potential. The accuracy of the commonly applied Tauc plot to find the optical gap is assessed based on the computed spectra and we find that this approach can lead to a misinterpretation of the experimental data. The minimum gap of NiFe2O4 is found to be a 1.53eV wide indirect gap, which is located in the minority spin channel.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

High TMR ratio in Co2FeSi and Fe2CoSi based magnetic tunnel junctions

Magnetic tunnel junctions with Fe1+xCo2-xSi (0 < x < 1) electrodes and MgO barrier were prepared on MgO substrates by magnetron co-sputtering. Maximum tunnel magnetoresistance (TMR) ratios of 262 % at 15 K and 159 % at room temperature were observed for x=0.75. Correlations of the annealing temperature dependent atomic ordering and TMR amplitude are discussed. The high TMR for an intermediate stoichiometry is ascribed to the adjustment of the Fermi energy within a minority spin pseudo gap.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Influence of heat flow directions on Nernst effects in Py/Pt bilayers

We investigated the voltages obtained in a thin Pt strip on a Permalloy film which was subject to in-plane temperature gradients and magnetic fields. The voltages detected by thin W-tips or bond wires showed a purely symmetric effect with respect to the external magnetic field which can be fully explained by the planar Nernst effect (PNE). To verify the influence of the contacts measurements in vacuum and atmosphere were compared and gave similar results. We explain that a slightly in-plane tilted temperature gradient only shifts the field direction dependence but does not cancel out the observed effects. Additionally, the anomalous Nernst effect (ANE) could be induced by using thick Au-tips which generated a heat current perpendicular to the sample plane. The effect can be manipulated by varying the temperature of the Au-tips. These measurements are discussed concerning their relevance in transverse spin Seebeck effect measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Influence of MgO tunnel barrier thickness on spin-transfer ferromagnetic resonance and torque in magnetic tunnel junctions

Spin-transfer ferromagnetic resonance (ST-FMR) in symmetric magnetic tunnel junctions (MTJs) with a varied thickness of the MgO tunnel barrier (0.75 nm < $t_{MgO}$ < 1.05 nm) is studied using the spin-torque diode effect. The application of an RF current into nanosized MTJs generates a DC mixing voltage across the device when the frequency is in resonance with the resistance oscillations arising from the spin transfer torque. Magnetization precession in the free and reference layers of the MTJs is analyzed by comparing ST-FMR signals with macrospin and micromagnetic simulations. From ST-FMR spectra at different DC bias voltage, the in-plane and perpendicular torkances are derived. The experiments and free-electron model calculations show that the absolute torque values are independent of tunnel barrier thickness. The influence of coupling between the free and reference layer of the MTJs on the ST-FMR signals and the derived torkances are discussed.

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preprint2013arXiv

Parameter space for thermal spin-transfer torque

Thermal spin-transfer torque describes the manipulation of the magnetization by the application of a heat flow. The effect has been calculated theoretically by Jia et al. in 2011. It is found to require large temperature gradients in the order of Kelvins across an ultra thin MgO barrier. In this paper, we present results on the fabrication and the characterization of magnetic tunnel junctions with 3 monolayer thin MgO barriers. The quality of the interfaces at different growth conditions is studied quantitatively via high-resolution transmission electron microscopy imaging. We demonstrate tunneling magneto resistance ratios of up to 55% to 64% for 3 to 4 monolayer barrier thickness. Magnetic tunnel junctions with perpendicular magnetization anisotropy show spin-transfer torque switching with a critical current of 0.2 MA/cm$^2$. The thermally generated torque is calculated ab initio using the Korringa-Kohn-Rostoker and non-equilibrium Green's function method. Temperature gradients generated from femtosecond laser pulses were simulated using COMSOL, revealing gradients of 20 K enabling thermal spin-transfer-torque switching.

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preprint2013arXiv

Quantitative study of the spin Hall magnetoresistance in ferromagnetic insulator/normal metal hybrids

We experimentally investigate and quantitatively analyze the spin Hall magnetoresistance effect in ferromagnetic insulator/platinum and ferromagnetic insulator/nonferromagnetic metal/platinum hybrid structures. For the ferromagnetic insulator we use either yttrium iron garnet, nickel ferrite or magnetite and for the nonferromagnet copper or gold. The spin Hall magnetoresistance effect is theoretically ascribed to the combined action of spin Hall and inverse spin Hall effect in the platinum metal top layer. It therefore should characteristically depend upon the orientation of the magnetization in the adjacent ferromagnet, and prevail even if an additional, nonferromagnetic metal layer is inserted between Pt and the ferromagnet. Our experimental data corroborate these theoretical conjectures. Using the spin Hall magnetoresistance theory to analyze our data, we extract the spin Hall angle and the spin diffusion length in platinum. For a spin mixing conductance of $4\times10^{14}\;\mathrm{Ω^{-1}m^{-2}}$ we obtain a spin Hall angle of $0.11\pm0.08$ and a spin diffusion length of $(1.5\pm0.5)\;\mathrm{nm}$ for Pt in our thin film samples.

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preprint2013arXiv

Thermally driven spin and charge currents in thin NiFe2O4/Pt films

We present results on the longitudinal spin Seebeck effect (LSSE) shown by semiconducting ferrimagnetic NiFe2O4/Pt films from room temperature down to 50K base temperature. To the best of our knowledge, this is the first observation of spin caloric effect in NiFe2O4 thin films. The temperature dependence of the conductivity has been studied in parallel to obtain information about the origin of the electric potentials detected at the Pt coverage of the ferrimagnet in order to distinguish the LSSE from the anomalous Nernst effect. Furthermore, the dependence of the LSSE on temperature gradients as well as the influence of an external magnetic field direction is investigated.

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preprint2013arXiv

Time-resolved measurement of the tunnel magneto-Seebeck effect in a single magnetic tunnel junction

Recently, several groups have reported spin-dependent thermoelectric effects in magnetic tunnel junctions. In this paper, we present a setup for time-resolved measurements of thermovoltages and thermocurrents of a single micro- to nanometer-scaled tunnel junction. An electrically modulated diode laser is used to create a temperature gradient across the tunnel junction layer stack. This laser modulation technique enables the recording of time-dependent thermovoltage signals with a temporal resolution only limited by the preamplifier for the thermovoltage. So far, time-dependent thermovoltage could not be interpreted. Now, with the setup presented in this paper, it is possible to distinguish different Seebeck voltage contributions to the overall measured voltage signal in the μs time regime. A model circuit is developed that explains those voltage contributions on different sample types. Further, it will be shown that a voltage signal arising from the magnetic tunnel junction can only be observed when the laser spot is directly centered on top of the magnetic tunnel junction, which allows a lateral separation of the effects.

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preprint2013arXiv

Tunneling magneto thermocurrent in CoFeB/MgO/CoFeB based magnetic tunnel junctions

We study the tunneling magneto thermopower and tunneling magneto thermocurrent of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJ). The devices show a clear change of the thermoelectric properties upon reversal of the magnetisation of the CoFeB layers from parallel to the antiparallel orientation. When switching from parallel to antiparallel the thermopower increases by up to 55% where as the thermocurrent drops by 45%. These observations can be well explained by the Onsager relations taking into account the tunneling magneto resistance of the MTJ. These findings contrast previous studies on AlO based MTJ systems, revealing tunneling magneto thermo power but no tunneling magneto thermocurrent.

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preprint2013arXiv

Unusual angular dependence of tunneling magneto-Seebeck effect

We find an unusual angular dependence of the tunneling magneto-Seebeck effect (TMS). The conductance shows normally a cosine-dependence with the angle between the magnetizations of the two ferromagnetic leads. In contrast, the angular dependence of the TMS depends strongly on the tunneling magneto resistance (TMR) ratio. For small TMR ratios we obtain also a cosine-dependence whereas for very large TMR ratios the angular dependence approaches a step-like function.

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preprint2013arXiv

X-ray absorption spectroscopy and magnetic circular dichroism studies of L1_0-Mn-Ga thin films

Tetragonally distorted \(\rm{Mn}_{3-x}\rm{Ga}_x\) thin films with \(0.1< x < 2\) show a strong perpendicular magnetic anisotropy and low magnetization and thus have the potential to serve as electrodes in spin transfer torque magnetic random access memory. Because a direct capping of these films with MgO is problematic due to oxide formation, we examined the influence of a CoFeB interlayer, and of two different deposition methods for the MgO barrier on the formation of interfacial MnO for \(\rm{Mn}_{62}\rm{Ga}_{38}\) by element specific X-ray absorption spectroscopy (XAS) and magnetic circular dichroism (XMCD). A highly textured L1\(_0\) crystal structure of the Mn-Ga films was verified by X-ray diffraction (XRD) measurements. For samples with e-beam evaporated MgO barrier no evidence for MnO was found, whereas in samples with magnetron sputtered MgO MnO was detected, even for the thickest interlayer thickness. Both XAS and XMCD measurements showed an increasing interfacial MnO amount with decreasing CoFeB interlayer thickness. Additional element specific full hysteresis loops determined an out-of-plane magnetization axis for the Mn and Co, respectively.

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preprint2012arXiv

Anomalous Hall Effect in perpendicularly magnetized Mn(_{3-x})Ga thin films

Mn$_{3-x}$Ga (x = 0.1, 0.4, 0.7) thin films on MgO and SrTiO$_3$ substrates were investigated with magnetic anisotropy perpendicular to the film plane. An anomalous Hall-effect was observed for the tetragonal distorted lattice in the crystallographic D0$_{22}$ phase. The Hall resistivity $\varrho_{xy}$ was measured in a temperature range from 20 to 330 K. The determined skew scattering and side jump coefficients are discussed with regard to the film composition and used substrate and compared to the crystallographic and magnetic properties.

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preprint2012arXiv

GW study of the half-metallic Heusler compounds Co2MnSi and Co2FeSi

Quasiparticle spectra of potentially half-metallic Co2MnSi and Co2FeSi Heusler compounds have been calculated within the one-shot GW approximation in an all-electron framework without adjustable parameters. For Co2FeSi the many-body corrections are crucial: a pseudogap opens and good agreement of the magnetic moment with experiment is obtained. Otherwise, however, the changes with respect to the density-functional-theory starting point are moderate. For both cases we find that photoemission and x-ray absorption spectra are well described by the calculations. By comparison with the GW density of states, we conclude that the Kohn-Sham eigenvalue spectrum provides a reasonable approximation for the quasiparticle spectrum of the Heusler compounds considered in this work.

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preprint2012arXiv

Insights into the electronic structure of Co2FeSi from x-ray magnetic linear dichroism

Experimental evidence both for and against a half-metallic ground-state of the Heusler compound Co2FeSi has been published. Density functional theory based calculations suggest a non half-metallic ground state. It has been argued, that on-site Coulomb interaction of the d electrons has to be taken into account via the LDA+U method, which predicts a half-metallic ground-state for U = 2.5...4.5 eV. X-ray magnetic linear dichroism (XMLD) can be used as a tool to assess the appropriateness of the LDA+U approach: the calculated spectra within the LDA+U or GGA+U schemes are different from those within the LDA or GGA. Due to its ability to separate different orbital symmetries, XMLD allows us to distinguish between different models of the electronic structure of Co2FeSi. In this article we discuss experimental XMLD spectra and compare them with detailed first principles calculations. Our findings give evidence for the inadequacy of the LDA+U or GGA+U band structures, whereas constrained calculations with the GGA and a fixed spin moment of 6 μ_B give better overall agreement between experiment and theory.

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preprint2012arXiv

Insights into ultrafast demagnetization in pseudo-gap half metals

Interest in femtosecond demagnetization experiments was sparked by Bigot's discovery in 1995. These experiments unveil the elementary mechanisms coupling the electrons' temperature to their spin order. Even though first quantitative models describing ultrafast demagnetization have just been published within the past year, new calculations also suggest alternative mechanisms. Simultaneously, the application of fast demagnetization experiments has been demonstrated to provide key insight into technologically important systems such as high spin polarization metals, and consequently there is broad interest in further understanding the physics of these phenomena. To gain new and relevant insights, we perform ultrafast optical pump-probe experiments to characterize the demagnetization processes of highly spin-polarized magnetic thin films on a femtosecond time scale. Previous studies have suggested shifting the Fermi energy into the center of the gap by tuning the number of electrons and thereby to study its influence on spin-flip processes. Here we show that choosing isoelectronic Heusler compounds (Co2MnSi, Co2MnGe and Co2FeAl) allows us to vary the degree of spin polarization between 60% and 86%. We explain this behavior by considering the robustness of the gap against structural disorder. Moreover, we observe that Co-Fe-based pseudo gap materials, such as partially ordered Co-Fe-Ge alloys and also the well-known Co-Fe-B alloys, can reach similar values of the spin polarization. By using the unique features of these metals we vary the number of possible spin-flip channels, which allows us to pinpoint and control the half metals electronic structure and its influence onto the elementary mechanisms of ultrafast demagnetization.

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preprint2012arXiv

Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance

The ferrimagnetic Heusler compound Mn2VGa is predicted to have a pseudogap in the majority spin channel, which should lead to a negative tunnel magnetoresistance. We synthesized epitaxial Mn2VGa thin films on MgO(001) substrates by dc and rf magnetron co-sputtering, resulting in nearly stoichiometric films. XRD analysis revealed a mostly B2-ordered structure for the films deposited at substrate temperatures of 350°C, 450°C, and 550°C. Magnetic tunnel junctions with MgO barrier and CoFe counter-electrodes were fabricated. After post-annealing at up to T_a=425°C negative TMR was obtained around zero bias, providing evidence for the inverted spin-polarization. Band structures of both electrodes were computed within the coherent potential approximation and used to calculate the TMR(V) characteristics, which are in good agreement with our experimental findings.

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preprint2011arXiv

Ferrimagnetism and disorder in epitaxial Mn(2-x)Co(x)VAl thin films

The quaternary full Heusler compound Mn(2-x)Co(x)VAl with x = 1 is predicted to be a half-metallic antiferromagnet. Thin films of the quaternary compounds with x = 0...2 were prepared by DC and RF magnetron co-sputtering on heated MgO (001) substrates. The magnetic structure was examined by x-ray magnetic circular dichroism and the chemical disorder was characterized by x-ray diffraction. Ferrimagnetic coupling of V to Mn was observed for Mn2VAl (x = 0). For x = 0.5, we also found ferrimagnetic order with V and Co antiparallel to Mn. The observed reduced magnetic moments are interpreted with the help of band structure calculations in the coherent potential approximation. Mn2VAl is very sensitive to disorder involving Mn, because nearest-neighbor Mn atoms couple anti-ferromagnetically. Co2VAl has B2 order and has reduced magnetization. In the cases with x >= 0.9 conventional ferromagnetism was observed, closely related to the atomic disorder in these compounds.

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preprint2011arXiv

Inductive determination of the optimum tunnel barrier thickness in magnetic tunnelling junction stacks for spin torque memory applications

We use pulsed inductive microwave magnetometry to study the precessional magnetization dynamics of the free layer in CoFeB/MgO/CoFeB based magnetic tunnelling junction stacks with varying MgO barrier thickness. From the field dependence of the precession frequency we are able to derive the uniaxial anisotropy energy and the exchange coupling between the free and the pinned layer. Furthermore the field dependence of the effective damping parameter is derived. Below a certain threshold barrier thickness we observe an increased effective damping for antiparallel orientation of free and pinned layer which would inhibit reversible low current density spin torque magnetization reversal. Such inductive measurements, in combination with wafer probe station based magneto transport experiments, allow a fast determination of the optimum tunnel barrier thickness range for spin torque memory applications in a lithography free process.

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preprint2011arXiv

Itinerant and local magnetic moments in ferrimagnetic Mn2CoGa thin films probed by x-ray magnetic linear dichroism: experiment and ab initio theory

Epitaxial thin films of the half-metallic Xa-compound Mn2CoGa (Hg2CuTi prototype) were prepared by dc magnetron co-sputtering with different heat treatments on MgO (001) substrates. High-quality films with a bulk magnetization of 1.95(5)μ_B per unit cell were obtained. The L3,2 x-ray magnetic circular dichroism spectra agree with calculations based on density functional theory (DFT) and reveal the antiparallel alignment of the two inequivalent Mn moments. X-ray magnetic linear dichroism, in good agreement with theory as well, allows to distinguish between itinerant and local Mn moments. Based on non-collinear spin DFT it is shown that one of the two Mn moments has local character, whereas the other Mn moment and the Co moment are itinerant.

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preprint2011arXiv

Local charge and spin currents in magnetothermal landscapes

A scannable laser beam is used to generate local thermal gradients in metallic (Co2FeAl) or insulating (Y3Fe5O12) ferromagnetic thin films. We study the resulting local charge and spin currents that arise due to the anomalous Nernst effect (ANE) and the spin Seebeck effect (SSE), respectively. In the local ANE experiments, we detect the voltage in the Co2FeAl thin film plane as a function of the laser spot position and external magnetic field magnitude and orientation. The local SSE effect is detected in a similar fashion by exploiting the inverse spin Hall effect in a Pt layer deposited on top of the Y3Fe5O12. Our findings establish local thermal spin and charge current generation as well as spin caloritronic domain imaging.

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preprint2011arXiv

Seebeck Effect in Magnetic Tunnel Junctions

Creating temperature gradients in magnetic nanostructures has resulted in a new research direction, i.e., the combination of magneto- and thermoelectric effects. Here, we demonstrate the observation of one important effect of this class: the magneto-Seebeck effect. It is observed when a magnetic configuration changes the charge based Seebeck coefficient. In particular, the Seebeck coefficient changes during the transition from a parallel to an antiparallel magnetic configuration in a tunnel junction. In that respect, it is the analog to the tunneling magnetoresistance. The Seebeck coefficients in parallel and antiparallel configuration are in the order of the voltages known from the charge-Seebeck effect. The size and sign of the effect can be controlled by the composition of the electrodes' atomic layers adjacent to the barrier and the temperature. Experimentally, we realized 8.8 % magneto-Seebeck effect, which results from a voltage change of about -8.7 μV/K from the antiparallel to the parallel direction close to the predicted value of -12.1 μV/K.

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preprint2011arXiv

Spin transfer torque oscillator based on asymmetric magnetic tunnel junctions

We present a study of the spin transfer torque oscillator based on CoFeB/MgO/CoFeB asymmetric magnetic tunnel junctions. We observe microwave precession in junctions with different thickness of the free magnetization layer. Taking advantage of the ferromagnetic interlayer exchange coupling between the free and reference layer in the MTJ and perpendicular interface anisotropy in thin CoFeB electrode we demonstrate the nanometer scale device that can generate high frequency signal without external magnetic field applied. The amplitude of the oscillation exceeds 10 nV/Hz^0.5 at 1.5 GHz.

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preprint2010arXiv

Ab initio prediction of ferrimagnetism, exchange interactions and Curie temperatures in Mn2TiZ Heusler compounds

The Heusler compounds Mn$_2$TiZ (Z = Al, Ga, In, Si, Ge, Sn, P, As, Sb) are of large interest due to their potential ferrimagnetic properties and high spin polarization. Here, we present calculations of the structural and magnetic properties of these materials. Their magnetic moment follows the Slater-Pauling rule $m = N_V - 24$. None of them is actually a perfect half-metallic ferrimagnet, but some exhibit more than 90% spin polarization and Curie temperatures well above room temperature. The exchange interactions are complex, direct and indirect exchange contributions are identified. The Curie temperature scales with the total magnetic moment, and it has a positive pressure dependence. The role of the Z element is investigated: it influences the properties of the compounds mainly via its valence electron number and its atomic radius, which determines the lattice parameter. Based on these results, Mn$_2$TiSi, Mn$_2$TiGe, and Mn$_2$TiSn are proposed as candidates for spintronic applications.

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preprint2010arXiv

Electronic structure of fully epitaxial Co2TiSn thin films

In this article we report on the properties of thin films of the full Heusler compound Co2TiSn prepared by DC magnetron co-sputtering. Fully epitaxial, stoichiometric films were obtained by deposition on MgO (001) substrates at substrate temperatures above 600°C. The films are well ordered in the L21 structure, and the Curie temperature exceeds slightly the bulk value. They show a significant, isotropic magnetoresistance and the resistivity becomes strongly anomalous in the paramagnetic state. The films are weakly ferrimagnetic, with nearly 1 μ_B on the Co atoms, and a small antiparallel Ti moment, in agreement with theoretical expectations. From comparison of x-ray absorption spectra on the Co L3/L2 edges, including circular and linear magnetic dichroism, with ab initio calculations of the x-ray absorption and circular dichroism spectra we infer that the electronic structure of Co2TiSn has essentially non-localized character. Spectral features that have not been explained in detail before, are explained here in terms of the final state band structure.

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preprint2010arXiv

Exchange interactions and Curie temperatures in Mn2CoZ compounds

The generalized Heusler compounds Mn2CoZ (Z = Al, Ga, In, Si, Ge, Sn, Sb) with the Hg2CuTi structure are of large interest due to their half-metallic ferrimagnetism. The complex magnetic interactions between the constituents are studied by first principles calculations of the Heisenberg exchange coupling parameters, and Curie temperatures are calculated from those. Due to the direct Mn-Mn exchange interaction in Mn2CoZ, the Curie temperature decreases, while the total moment increases when changing Z from one group to another. The exchange interactions are dominated by a strong direct exchange between Co and its nearest neighbor Mn on the B site, which is nearly constant. The coupling between the nearest-neighbor Mn atoms scales with the magnetic moment of the Mn atom on the C site. Calculations with different lattice parameters suggest a negative pressure dependence of the Curie temperature, which follows from decreasing magnetic moments. Curie temperatures of more than 800 K are predicted for Mn2CoAl (890 K), Mn2CoGa (886 K), and Mn2CoIn (845 K).

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preprint2010arXiv

Influence of tetragonal distortion on the magnetic and electronic properties of the Heusler compound Co2TiSn from first principles

Using the full potential linearized augmented plane wave plus local orbitals method we determine ab-initio the lattice parameters of tetragonally distorted Co2TiSn in the L21 structure. The tetragonal lattice parameter c is determined as a function of the lattice parameter a by energy minimization. The change in total energy is found to be only a few $k_B T$ with respect to room temperature. The spin polarizations as well as the magnetizations are stable against small lattice distortions. It is shown, that the volume is not constant upon distortion and that the volume change is related with significant changes in the magnetization and the gap energy.

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preprint2010arXiv

Magnetic microstructure and magnetotransport in Co2FeAl Heusler compound thin films

We correlate simultaneously recorded magnetotransport and spatially resolved magneto optical Kerr effect (MOKE) data in Co2FeAl Heusler compound thin films micropatterned into Hall bars. Room temperature MOKE images reveal the nucleation and propagation of domains in an externally applied magnetic field and are used to extract a macrospin corresponding to the mean magnetization direction in the Hall bar. The anisotropic magnetoresistance calculated using this macrospin is in excellent agreement with magnetoresistance measurements. This suggests that the magnetotransport in Heusler compounds can be adequately simulated using simple macrospin models, while the magnetoresistance contribution due to domain walls is of negligible importance.

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preprint2010arXiv

Structural and magnetic properties of Co-Mn-Sb thin films

Thin Co-Mn-Sb films of different compositions were investigated and utilized as electrodes in alumina based magnetic tunnel junctions with CoFe counter electrode. The preparation conditions were optimized with respect to magnetic and structural properties. The Co-Mn-Sb/Al-O interface was analyzed by X-ray absorption spectroscopy and magnetic circular dichroism with particular focus on the element-specific magnetic moments. Co-Mn-Sb crystallizes in different complex cubic structures depending on its composition. The magnetic moments of Co and Mn are ferromagnetically coupled in all cases. A tunnel magneto resistance ratio of up to 24 % at 13K was found and indicates that Co-Mn-Sb is not a ferromagnetic half-metal. These results are compared to recent works on the structure and predictions of the electronic properties.

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preprint2010arXiv

Temperature and bias voltage dependence of Co/Pd multilayer-based magnetic tunnel junctions with perpendicular magnetic anisotropy

Temperature- and bias voltage-dependent transport measurements of magnetic tunnel junctions (MTJs) with perpendicularly magnetized Co/Pd electrodes are presented. Magnetization measurements of the Co/Pd multilayers are performed to characterize the electrodes. The effects of the Co layer thickness in the Co/Pd bilayers, the annealing temperature, the Co thickness at the MgO barrier interface, and the number of bilayers on the tunneling magneto resistance (TMR) effect are investigated. TMR-ratios of about 11 % at room temperature and 18.5 % at 13 K are measured and two well-defined switching fields are observed. The results are compared to measurements of MTJs with Co-Fe-B electrodes and in-plane anisotropy.

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preprint2010arXiv

Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions

Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia, and magnesia-alumina bilayer systems. The highest tunnel magnetoresistance ratios we found were 73% for alumina and 323% for magnesia-based tunnel junctions. Additionally, tunnel junctions with a unified layer stack were prepared for the three different barriers. In these systems, the tunnel magnetoresistance ratios at optimum annealing temperatures were found to be 65% for alumina, 173% for magnesia, and 78% for the composite tunnel barriers. The similar tunnel magnetoresistance ratios of the tunnel junctions containing alumina provide evidence that coherent tunneling is suppressed by the alumina layer in the composite tunnel barrier.

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preprint2010arXiv

Tunneling spectroscopy probing magnetic and nonmagnetic electrodes in tunnel junctions

Tunneling spectroscopy is applied to tunnel junctions with only one or no ferromagnetic electrode to study the excitation of quasi particles in magnetic tunnel junctions. The bias dependence is investigated with high accuracy by inelastic electron tunneling spectroscopy. Both types of junctions show a zero bias anomaly that is different in size and sign compared to magnetic tunnel junctions, i.e. junctions with two ferromagnetic electrodes. A pronounced difference is also found depending on the material that is probed by the tunneling electrons, which might be attributed to the excitation of magnons.

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