Researcher profile

Mark W. Harrington

Mark W. Harrington contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2026arXiv

Sub-Doppler rubidium atom cooling using a programmable agile integrated PZT-on-SiN resonator

Programmability and precise control of laser frequency are essential for quantum experiments and applications such as atomic clocks, quantum computers, and cold-atom sensors. Current systems use bulky, power-hungry modulators and frequency shifters which are difficult to integrate and limit portability and scalability. We report an electrically controllable, agile optical frequency source based on a semiconductor laser stabilized to a photonic-integrated, lead zirconate titanate (PZT)-actuated resonator cavity. We demonstrate this approach with precision programmable frequency control of a 780-nm laser that can periodically reference to rubidium spectroscopy followed by fast, programmable, arbitrary frequency tuning sequences for quantum control. We use this approach to demonstrate sub-Doppler cooling of rubidium-87 without any external modulators, achieving atom-cloud temperatures as low as 16 $μ$K. The device achieves a tuning strength up to 1 GHz/V with 11 MHz modulation bandwidth while consuming only 10 nW of electrical power. This work establishes a route toward compact, low-power, and chip-scale laser systems for next-generation quantum and atomic sensing technologies.

preprint2025arXiv

Octave Spanning Visible to SWIR Integrated Coil-Stabilized Brillouin Lasers

Narrow linewidth stabilized lasers are central to precision applications that operate across the visible to short-wave infrared wavelengths, including optical clocks, quantum sensing and computing, ultra-low noise microwave generation, and fiber sensing. Today, these spectrally pure sources are realized using multiple external cavity tabletop lasers locked to bulk-optic free-space reference cavities. Integration of this technology will enable portable precision applications with improved reliability and robustness. Here, we report wavelength-flexible design and operation, over more than an octave span, of an integrated coil-resonator-stabilized Brillouin laser architecture. Leveraging a versatile two-stage noise reduction approach, we achieve low linewidths and high stability with chip-scale laser designs based on the ultra-low-loss, CMOS-compatible silicon nitride platform. We report operation at 674 and 698 nm for applications to strontium neutral and trapped-ion clocks, quantum sensing and computing, and at 1550 nm for applications to fiber sensing and ultra-low phase noise microwave generation. Over this range we demonstrate frequency noise reduction from 1 Hz to 10 MHz resulting in 1.0 Hz -17 Hz fundamental and 181 Hz - 630 Hz integral linewidths and an Allan deviation of 6.5 x 10-13 at 1 ms for 674 nm, 6.0 x 10-13 at 15 ms for 698 nm, and 2.6 x10-13 at 15 ms for 1550 nm. This represents the lowest achieved linewidths and highest stability for integrated stabilized Brillouin lasers over an order of magnitude improvement in operating wavelength range. These results unlock the potential of integrated, ultra-low-phase-noise stabilized lasers for precision applications and further integration in systems-on-chip solutions.

preprint2022arXiv

Silicon nitride stress-optic microresonator modulator for optical control applications

The silicon nitride integration platform has been successful at realizing extremely low waveguide losses across the visible to infrared and components including high performance lasers, filters, resonators, stabilization cavities, and optical frequency combs. Yet, progress towards implementing low loss, low power modulators in the silicon nitride platform, while maintaining the planar, wafer-scale process compatibility has been limited. Here we report a significant advance in integration of a piezo-electric (PZT) actuated micro-ring modulation in a fully-planar, wafer-scale silicon nitride platform, that maintains low optical loss (0.03 dB/cm in a 625 um resonator) at 1550 nm, with an order of magnitude increase in bandwidth (DC to 20 MHz 3-dB) and order of magnitude lower power consumption of 20 nW improvement over prior PZT modulators. The modulator provides a >14 dB ER and 7.1 million Q over the entire 4 GHz tuning range, a tuning efficiency of 200 MHz/V, and delivers the linearity required for control applications with 65.1 dBHz2/3 and 73.8 dBHz2/3 IMD3 SFDR at 1 MHz and 10 MHz respectively. We demonstrate two control applications, laser stabilization in a PDH lock loop, reducing laser frequency noise by 40 dB, and as a laser carrier tracking filter. This PZT modulator design can be extended to the visible in the ultra-low loss silicon nitride platform with minor waveguide design changes. This integration of PZT modulation in the ultra-low loss silicon nitride waveguide platform enables modulator control functions in a wide range of visible to IR applications such as atomic and molecular transition locking for cooling, controllable optical frequency combs, low-power external cavity tunable lasers, atomic clocks, and tunable ultra-low linewidth lasers and ultra-low phase noise microwave synthesizers.