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Mark S. Hybertsen

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Published work

19 published item(s)

preprint2021arXiv

Data-driven Approach to Parameterize SCAN+U for an Accurate Description of 3d Transition Metal Oxide Thermochemistry

Semi-local DFT methods exhibit significant errors for the phase diagrams of transition-metal oxides that are caused by an incorrect description of molecular oxygen and the large self-interaction error in materials with strongly localized electronic orbitals. Empirical and semiempirical corrections based on the DFT+U method can reduce these errors, but the parameterization and validation of the correction terms remains an on-going challenge. We develop a systematic methodology to determine the parameters and to statistically assess the results by considering thermochemical data across a set of transition metal compounds. We consider three interconnected levels of correction terms: (1) a constant oxygen binding correction, (2) Hubbard-U correction, and (3) DFT/DFT+U compatibility correction. The parameterization is expressed as a unified optimization problem. We demonstrate this approach for 3d transition metal oxides, considering a target set of binary and ternary oxides. With a total of 37 measured formation enthalpies taken from the literature, the dataset is augmented by the reaction energies of 1,710 unique reactions that were derived from the formation energies by systematic enumeration. To ensure a balanced dataset across the available data, the reactions were grouped by their similarity using clustering and suitably weighted. The parameterization is validated using leave-one-out cross-validation (CV), a standard technique for the validation of statistical models. We apply the methodology to the SCAN density functional. Based on the CV score, the error of binary (ternary) oxide formation energies is reduced by 40% (75%) to 0.10 (0.03) eV/atom. The method and tools demonstrated here can be applied to other classes of materials or to parameterize the corrections to optimize DFT+U performance for other target physical properties.

preprint2020arXiv

Microscopic Relaxation Channels in Materials for Superconducting Qubits

Despite mounting evidence that materials imperfections are a major obstacle to practical applications of superconducting qubits, connections between microscopic material properties and qubit coherence are poorly understood. Here, we perform measurements of transmon qubit relaxation times $T_1$ in parallel with spectroscopy and microscopy of the thin polycrystalline niobium films used in qubit fabrication. By comparing results for films deposited using three techniques, we reveal correlations between $T_1$ and grain size, enhanced oxygen diffusion along grain boundaries, and the concentration of suboxides near the surface. Physical mechanisms connect these microscopic properties to residual surface resistance and $T_1$ through losses arising from the grain boundaries and from defects in the suboxides. Further, experiments show that the residual resistance ratio can be used as a figure of merit for qubit lifetime. This comprehensive approach to understanding qubit decoherence charts a pathway for materials-driven improvements of superconducting qubit performance.

preprint2016arXiv

Description of quasiparticle and satellite properties via cumulant expansions of the retarded one-particle Green's function

A new cumulant-based $GW$ approximation for the retarded one-particle Green's function is proposed, motivated by an exact relation between the improper Dyson self-energy and the cumulant generating function. Qualitative aspects of this method are explored within a simple one-electron independent phonon model, where it is seen that the method preserves the energy moment of the spectral weight while also reproducing the exact Green's function in the weak coupling limit. For the three-dimensional electron gas, this method predicts multiple satellites at the bottom of the band, albeit with inaccurate peak spacing. However, its quasiparticle properties and correlation energies are more accurate than both previous cumulant methods and standard $G_0W_0$. Our results point to new features that may be exploited within the framework of cumulant-based methods and suggest promising directions for future exploration and improvement of cumulant-based $GW$ approaches.

preprint2015arXiv

Binding energies and spatial structures of small carrier complexes in monolayer transition metal dichalcogenides via diffusion Monte Carlo

Ground state diffusion Monte Carlo is used to investigate the binding energies and carrier probability distributions of excitons, trions, and biexcitons in a variety of two-dimensional transition metal dichalcogenide materials. We compare these results to approximate variational calculations, as well as to analogous Monte Carlo calculations performed with simplified carrier interaction potentials. Our results highlight the successes and failures of approximate approaches as well as the physical features that determine the stability of small carrier complexes in monolayer transition metal dichalcogenide materials. Lastly, we discuss points of agreement and disagreement with recent experiments.

preprint2015arXiv

Bright and dark singlet excitons via linear and two-photon spectroscopy in monolayer transition-metal dichalcogenides

We discuss the linear and two-photon spectroscopic selection rules for spin-singlet excitons in monolayer transition-metal dichalcogenides. Our microscopic formalism combines a fully $k$-dependent few-orbital band structure with a many-body Bethe-Salpeter equation treatment of the electron-hole interaction, using a model dielectric function. We show analytically and numerically that the single-particle, valley-dependent selection rules are preserved in the presence of excitonic effects. Furthermore, we definitively demonstrate that the bright (one-photon allowed) excitons have $s$-type azimuthal symmetry and that dark $p$-type excitons can be probed via two-photon spectroscopy. The screened Coulomb interaction in these materials substantially deviates from the $1/\varepsilon_0 r$ form; this breaks the "accidental" angular momentum degeneracy in the exciton spectrum, such that the 2$p$ exciton has a lower energy than the 2$s$ exciton by at least 50 meV. We compare our calculated two-photon absorption spectra to recent experimental measurements.

preprint2014arXiv

Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2

We have experimentally determined the energies of the ground and first four excited excitonic states of the fundamental optical transition in monolayer WS2, a model system for the growing class of atomically thin two-dimensional semiconductor crystals. From the spectra, we establish a large exciton binding energy of 0.32 eV and a pronounced deviation from the usual hydrogenic Rydberg series of energy levels of the excitonic states. We explain both of these results using a microscopic theory in which the non-local nature of the effective dielectric screening modifies the functional form of the Coulomb interaction. These strong but unconventional electron-hole interactions are expected to be ubiquitous in atomically thin materials.

preprint2014arXiv

First-Principles Approach for Energy Level Alignment at Aqueous Semiconductor Interfaces

A first-principles approach is demonstrated to calculate the relationship between aqueous semiconductor interface structure and energy level alignment. The physical interface structure is sampled using density functional theory based molecular dynamics, yielding the interface electrostatic dipole. The $GW$ approach is used to place the electronic band edge energies of the semiconductor relative to the occupied $1b_1$ energy level in water. Application to the specific cases of non-polar $(10\bar{1}0)$ facets of GaN and ZnO reveals a significant role for the structural motifs at the interface, including the degree of interface water dissociation and the dynamical fluctuations in the interface Zn-O and O-H bond orientations. These effects contribute up to 0.5 eV.

preprint2013arXiv

Microscopic theory to quantify the competing kinetic processes in photoexcited surface-coupled quantum dots

We present a self-contained theoretical and computational framework for dynamics following photoexcitation in quantum dots near planar interfaces. A microscopic Hamiltonian parameterized by first principles calculations is merged with a reduced density matrix formalism that allows for the prediction of time-dependent charge and energy transfer processes between the quantum dot and the electrode. While treating charge and energy transfer processes on an equal footing, the non-perturbative effects of sudden charge transitions on the Fermi sea of the electrode are included. We illustrate the formalism with calculations of an InAs quantum dot coupled to the Shockley state on an Au[111] surface, and use it to concretely discuss the wide range of kinetics possible in these systems and their implications for photovoltaic systems and tunnel junction devices. We discuss the utility of this framework for the analysis of recent experiments.

preprint2013arXiv

Theory of Neutral and Charged Excitons in Monolayer Transition Metal Dichalcogenides

We present a microscopic theory of neutral excitons and charged excitons (trions) in monolayers of transition metal dichalcogenides, including molybdenum disulfide. Our theory is based on an effective mass model of excitons and trions, parametrized by ab initio calculations and incorporating a proper treatment of screening in two dimensions. The calculated exciton binding energies are in good agreement with high-level many-body computations based on the Bethe-Salpeter equation. Furthermore, our calculations for the more complex trion species compare very favorably with recent experimental measurements, and provide atomistic insight into the microscopic features which determine the trion binding energy.

preprint2012arXiv

Effects of the interfacial polarization on tunneling in surface coupled quantum dots

Polarization effects are included exactly in a model for a quantum dot in close proximity to a planar interface. Efficient incorporation of this potential into the Schrödinger equation is utilized to map out the influence of the image potential effects on carrier tunneling in such heterostructures. In particular, the interplay between carrier mass and the dielectric constants of a quantum dot, its surrounding matrix, and the electrode is studied. We find that the polarizability of the planar electrode structure can significantly increase the tunneling rates for heavier carriers, potentially resulting in a qualitative change in the dependence of tunneling rate on mass. Our method for treating polarization can be generalized to the screening of two particle interactions, and can thus be applied to calculations such as exciton dissociation and the Coulomb blockade. In contrast to tunneling via intermediate surface localized states of the quantum dot, our work identifies the parameter space over which volume states undergo significant modification in their tunneling characteristics.

preprint2012arXiv

Microscopic theory of singlet exciton fission. I. General formulation

Singlet fission, a spin-allowed energy transfer process generating two triplet excitons from one singlet exciton, has the potential to dramatically increase the efficiency of organic solar cells. However, the dynamical mechanism of this phenomenon is not fully understood and a complete, microscopic theory of singlet fission is lacking. In this work, we assemble the components of a comprehensive microscopic theory of singlet fission that connects excited state quantum chemistry calculations with finite-temperature quantum relaxation theory. We elaborate on the distinction between localized diabatic and delocalized adiabatic bases for the interpretation of singlet fission experiments in both the time and frequency domains. We discuss various approximations to the exact density matrix dynamics and propose Redfield theory as an ideal compromise between speed and accuracy for the detailed investigation of singlet fission in dimers, clusters, and crystals. Investigations of small model systems based on parameters typical of singlet fission demonstrate the numerical accuracy and practical utility of this approach.

preprint2012arXiv

Microscopic theory of singlet exciton fission. II. Application to pentacene dimers and the role of superexchange

In the preceding paper, we assembled the theoretical components necessary for a unified framework of singlet fission, a type of multiexciton generation producing two triplet excitons from one singlet exciton. In this paper, we apply our methodology to molecular dimers of pentacene, a widely studied material that exhibits singlet fission. We address a longstanding theoretical issue, namely whether singlet fission proceeds via two sequential electron transfer steps mediated by a charge-transfer state or via a direct two-electron transfer process. We find evidence for a superexchange mediated mechanism, whereby the fission process proceeds through virtual charge-transfer states which may be very high in energy. In particular, this mechanism predicts efficient singlet fission on the sub-picosecond timescale, in reasonable agreement with experiment. We investigate the role played by molecular vibrations in mediating relaxation and decoherence, finding that different physically reasonable forms for the bath relaxation function give similar results. We also examine the competing direct coupling mechanism and find it to yield fission rates slower in comparison with the superexchange mechanism for the dimer. We discuss implications for crystalline pentacene, including the limitations of the dimer model.

preprint2011arXiv

Highly Conducting pi-Conjugated Molecular Junctions Covalently Bonded to Gold Electrodes

We measure electronic conductance through single conjugated molecules bonded to Au metal electrodes with direct Au-C covalent bonds using the scanning tunneling microscope based break-junction technique. We start with molecules terminated with trimethyltin end groups that cleave off in situ resulting in formation of a direct covalent sigma bond between the carbon backbone and the gold metal electrodes. The molecular carbon backbone used in this study consist of a conjugated pi-system that has one terminal methylene group on each end, which bonds to the electrodes, achieving large electronic coupling of the electrodes to the pi-system. The junctions formed with the prototypical example of 1,4-dimethylenebenzene show a conductance approaching one conductance quantum (G0 = 2e2/h). Junctions formed with methylene terminated oligophenyls with two to four phenyl units show a hundred-fold increase in conductance compared with junctions formed with amine-linked oligophenyls. The conduction mechanism for these longer oligophenyls is tunneling as they exhibit an exponential dependence of conductance with oligomer length. In addition, density functional theory based calculations for the Au-xylylene-Au junction show near-resonant transmission with a cross-over to tunneling for the longer oligomers.

preprint2011arXiv

Visualizing Individual Nitrogen Dopants in Monolayer Graphene

In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy (STM), Raman spectroscopy, x-ray spectroscopy, and first principles calculations to characterize individual nitrogen dopants in monolayer graphene grown on a copper substrate. Individual nitrogen atoms were incorporated as graphitic dopants, and a fraction of the extra electron on each nitrogen atom was delocalized into the graphene lattice. The electronic structure of nitrogen-doped graphene was strongly modified only within a few lattice spacings of the site of the nitrogen dopant. These findings show that chemical doping is a promising route to achieving high-quality graphene films with a large carrier concentration.

preprint2010arXiv

Enhanced Static Approximation to the Electron Self-Energy Operator for Efficient Calculation of Quasiparticle Energies

An enhanced static approximation for the electron self energy operator is proposed for efficient calculation of quasiparticle energies. Analysis of the static COHSEX approximation originally proposed by Hedin shows that most of the error derives from the short wavelength contributions of the assumed adiabatic accumulation of the Coulomb-hole. A wavevector dependent correction factor can be incorporated as the basis for a new static approximation. This factor can be approximated by a single scaling function, determined from the homogeneous electron gas model. The local field effect in real materials is captured by a simple ansatz based on symmetry consideration. As inherited from the COHSEX approximation, the new approximation presents a Hermitian self-energy operator and the summation over empty states is eliminated from the evaluation of the self energy operator. Tests were conducted comparing the new approximation to GW calculations for diverse materials ranging from crystals and nanotubes. The accuracy for the minimum gap is about 10% or better. Like in the COHSEX approximation, the occupied bandwidth is overestimated.

preprint2010arXiv

Quasiparticle and Optical Properties of Rutile and Anatase TiO$_{2}$

Quasiparticle excitation energies and optical properties of TiO$_{2}$ in the rutile and anatase structures are calculated using many-body perturbation theory methods. Calculations are performed for a frozen crystal lattice; electron-phonon coupling is not explicitly considered. In the GW method, several approximations are compared and it is found that inclusion of the full frequency dependence as well as explicit treatment of the Ti semicore states are essential for accurate calculation of the quasiparticle energy band gap. The calculated quasiparticle energies are in good agreement with available photoemission and inverse photoemission experiments. The results of the GW calculations, together with the calculated static screened Coulomb interaction, are utilized in the Bethe-Salpeter equation to calculate the dielectric function $ε_{2}(ω)$ for both the rutile and anatase structures. The results are in good agreement with experimental observations, particularly the onset of the main absorption features around 4 eV. For comparison to low temperature optical absorption measurements that resolve individual excitonic transitions in rutile, the low-lying discrete excitonic energy levels are calculated with electronic screening only. The lowest energy exciton found in the energy gap of rutile has a binding energy of 0.13 eV. In agreement with experiment, it is not dipole allowed, but the calculated exciton energy exceeds that measured in absorption experiments by about 0.22 eV and the scale of the exciton binding energy is also too large. The quasiparticle energy alignment of rutile is calculated for non-polar (110) surfaces. In the GW approximation, the valence band maximum is 7.8 eV below the vacuum level, showing a small shift from density functional theory results.

preprint2009arXiv

GW approach to Anderson model out of equilibrium: Coulomb blockade and false hysteresis in the I-V characteristics

The Anderson model for a single impurity coupled to two leads is studied using the $GW$ approximation in the strong electron-electron interaction regime as a function of the alignment of the impurity level relative to the chemical potentials in the leads. We employ a non-equilibrium Green's function technique to calculate the electron self-energy, the spin density and the current as a function of bias across the junction. In addition we develop an expression for the change in the expectation value of the energy of the system that results when the impurity is coupled to the leads, including the role of Coulomb interactions through the electron self energy in the region of the junction. The current-voltage characteristics calculated within the GW approximation exhibit Coulomb blockade. Depending on the gate voltage and applied bias, we find that there can be more than one steady-state solution for the system, which may give rise to a hysteresis in the I-V characteristics. We show that the hysteresis is an artifact of the $GW$ approximation and would not survive if quantum fluctuations beyond the $GW$ approximation are included.

preprint2008arXiv

Graphene Oxidation: Thickness Dependent Etching and Strong Chemical Doping

Patterned graphene shows substantial potential for applications in future molecular-scale integrated electronics. Environmental effects are a critical issue in a single layer material where every atom is on the surface. Especially intriguing is the variety of rich chemical interactions shown by molecular oxygen with aromatic molecules. We find that O2 etching kinetics vary strongly with the number of graphene layers in the sample. Three-layer-thick samples show etching similar to bulk natural graphite. Single-layer graphene reacts faster and shows random etch pits in contrast to natural graphite where nucleation occurs at point defects. In addition, basal plane oxygen species strongly hole dope graphene, with a Fermi level shift of ~0.5 eV. These oxygen species partially desorb in an Ar gas flow, or under irradiation by far UV light, and readsorb again in an O2 atmosphere at room temperature. This strongly doped graphene is very different than graphene oxide made by mineral acid attack.

preprint2007arXiv

Amine-Gold Linked Single-Molecule Junctions: Experiment and Theory

The measured conductance distribution for single molecule benzenediamine-gold junctions, based on 59,000 individual conductance traces recorded while breaking a gold point contact in solution, has a clear peak at 0.0064 G$_{0}$ with a width of $\pm$ 40%. Conductance calculations based on density functional theory (DFT) for 15 distinct junction geometries show a similar spread. Differences in local structure have a limited influence on conductance because the amine-Au bonding motif is well-defined and flexible. The average calculated conductance (0.046 G$_{0}$) is seven times larger than experiment, suggesting the importance of many-electron corrections beyond DFT.