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Mark Lundstrom

Mark Lundstrom appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.otherphysics.app-phphysics.comp-ph

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Published work

21 published item(s)

preprint2020arXiv

LanTraP: A code for calculating thermoelectric transport properties with the Landauer formalism

A code for calculating the semi-classical thermoelectric and electronic transport properties is described. It uses the Landauer transport theory, which is equivalent to the Boltzmann theory, by introducing a central quantity-the distribution of modes. Its usage enables the so-called band-counting algorithm that can speed up the calculation and offers the potential to rapidly screen DFT band structures. Good agreements are found when comparing the results obtained using band-counting and established Fourier-based interpolation methods.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Limitations of zT as a Figure of Merit for Nanostructured Thermoelectric Materials

A numerical study of thermoelectric nanocomposites is presented. Thermoelectric properties as a function of average grain size or nanoparticle density are examined by simulating the measurements as they would be done experimentally. In accordance with previous theory and experimental results, we find that the Seebeck coefficient, power factor and figure of merit, zT, can be increased by nanostructuring when energy barriers exist around the grain boundaries or embedded nanoparticles. When we simulate the performance of a thermoelectric cooler with the same material, however, we find that the maximum temperature difference is much less than expected from the given zT. The same nanocomposite without electrically active grain boundaries has a lower measured zT but a higher maximum cooling temperature. The physical reason for these results is explained. The results illustrate the limitations of zT as a figure of merit for nanocomposites with electrically active grain boundaries and suggest that the ability to enhance the electrical performance of thermoelectric materials by nanostructuring is limited.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

The use of strain and grain boundaries to tailor phonon transport properties: A first principles study of 2H-phase $CuAlO_{2}$ (Part II)

Transparent oxide materials, such as $CuAlO_{2}$, a p-type transparent conducting oxide (TCO), have recently been studied for high temperature thermoelectric power generators and coolers for waste heat. TCO materials are generally low cost and non-toxic. The potential to engineer them through strain and nano-structuring are two promising avenues toward continuously tuning the electronic and thermal properties to achieve high zT values and low cost/kW-hr devices. In this work, the strain-dependent lattice thermal conductivity of 2H $CuAlO_{2}$ is computed by solving the phonon Boltzmann transport equation with interatomic force constants extracted from first-principles calculations. While the average bulk thermal conductivity is around 32 W/(K-m) at room temperature, it drops to between 5-15 W/(K-m) for typical experimental grain sizes from 3nm to 30nm at room temperature. We find that strain can offer both an increase as well as a decrease in the thermal conductivity as expected, however the overall inclusion of small grain sizes dictates the potential for low thermal conductivity in this material.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Gate-Tunable and Thickness-dependent Electronic and Thermoelectric Transport in few-layer MoS2

Over the past few years, there has been a growing interest in layered transition metal dichalcogenides (TMD) such as molybdenum disulfide (MoS2). Most studies so far have focused on the electronic and optoelectronic properties of single-layer MoS2, whose band structure features a direct bandgap, in sharp contrast to the indirect bandgap of thicker MoS2. In this paper, we present a systematic study of the thickness-dependent electrical and thermoelectric properties of few-layer MoS2. We observe that the electrical conductivity () increases as we reduce the thickness of MoS2 and peaks at about two layers, with six-time larger conductivity than our thickest sample (23-layer MoS2). Using a back-gate voltage, we modulate the Fermi energy () of the sample where an increase in the Seebeck coefficient () is observed with decreasing gate voltage () towards the subthreshold (OFF state) of the device, reaching as large as in a four-layer MoS2. While previous reports have focused on a single-layer MoS2 and measured Seebeck coefficient in the OFF state, which has vanishing electrical conductivity and thermoelectric power factor (), we show that MoS2-based devices in their ON state can have as large as in the two-layer sample. The increases with decreasing thickness then drops abruptly from double-layer to single-layer MoS2, a feature we suggest as due to a change in the energy dependence of the electron mean-free-path according to our theoretical calculation. Moreover, we show that care must be taken in thermoelectric measurements in the OFF state to avoid obtaining erroneously large Seebeck coefficients when the channel resistance is very high. Our study paves the way towards a more comprehensive examination of the thermoelectric performance of two-dimensional (2D) semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Modeling ballistic effects in frequency-dependent transient thermal transport using diffusion equations

Understanding ballistic phonon transport effects in transient thermoreflectance experiments and explaining the observed deviations from classical theory remains a challenge. Diffusion equations are simple and computationally efficient but are widely believed to break down when the characteristic length scale is similar or less than the phonon mean-free-path. Building on our prior work, we demonstrate how well-known diffusion equations, namely the hyperbolic heat equation and the Cattaneo equation, can be used to model ballistic phonon effects in frequency-dependent periodic steady-state thermal transport. Our analytical solutions are found to compare excellently to rigorous numerical results of the phonon Boltzmann transport equation. The correct physical boundary conditions can be different from those traditionally used and are paramount for accurately capturing ballistic effects. To illustrate the technique, we consider a simple model problem using two different, commonly-used heating conditions. We demonstrate how this framework can easily handle detailed material properties, by considering the case of bulk silicon using a full phonon dispersion and mean-free-path distribution. This physically transparent approach provides clear insights into the nonequilibrium physics of quasi-ballistic phonon transport and its impact on thermal transport properties.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Role of photon recycling in perovskite solar cells

Nearly perfect photon recycling helped GaAs cells achieve the highest efficiency ever reported for a solar cell. Recent reports of photon recycling in perovskite solar cells suggest that, once optimized, it may as well achieve GaAs-like performance. In this paper, we show that GaAs and perovskite cells recycle photons in different ways. First, although bare-perovskite has been shown to have lifetimes (~1us) in the radiative limit, non-radiative recombination at the transport layers restricts the solar cell operation far below the "photon-recycling" regime. GaAs cells have no such limitation. Second, even if the transport layers were optically and electrically perfect, the poor mobility of the perovskite layer would still restrict the optimum thickness ~1um. Thus, a very high quality mirror (reflectivity >96%) is required to utilize photon-recycling. The mirror reflectivity restriction was far more relaxed for the thicker (~2-3um) GaAs cells. Therefore, a nontrivial co-optimization of device geometry, mirror reflectivity, and material choice is necessary for achieving highest theoretical efficiency anticipated for perovskite cells.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Some Useful Relations for Analyzing Nanoscale MOSFETs Operating in the Linear Region

Several equations used to model and characterize the linear region IV characteristics of nanoscale field-effect transistors are derived. The meaning of carrier mobility at the nanoscale is discussed by defining two related quantities, the apparent mobility and the ballistic mobility. The validity of Matthiessen's Rule for relating the apparent ability to the ballistic and diffusive mobilities is examined. Other questions that arise in the analysis and characterization of nanoscale field-effect transistors are also discussed. These notes are intended to pull together in one place some key equations needed to analyze the linear region performance of nanoscale MOSFETs and to point out some errors in previous publications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

A Simple Boltzmann Transport Equation for Ballistic to Diffusive Transient Heat Transport

Developing simplified, but accurate, theoretical approaches to treat heat transport on all length and time scales is needed to further enable scientific insight and technology innovation. Using a simplified form of the Boltzmann transport equation (BTE), originally developed for electron transport, we demonstrate how ballistic phonon effects and finite-velocity propagation are easily and naturally captured. We show how this approach compares well to the phonon BTE, and readily handles a full phonon dispersion and energy-dependent mean-free-path. This study of transient heat transport shows i) how fundamental temperature jumps at the contacts depend simply on the ballistic thermal resistance, ii) that phonon transport at early times approach the ballistic limit in samples of any length, and iii) perceived reductions in heat conduction, when ballistic effects are present, originate from reductions in temperature gradient. Importantly, this framework can be recast exactly as the Cattaneo and hyperbolic heat equations, and we discuss how the key to capturing ballistic heat effects is to use the correct physical boundary conditions.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Steady-State Heat Transport: Ballistic-to-Diffusive with Fourier's Law

It is generally understood that Fourier's law does not describe ballistic phonon transport, which is important when the length of a material is similar to the phonon mean-free-path. Using an approach adapted from electron transport, we demonstrate that Fourier's law and the heat equation do capture ballistic effects, including temperature jumps at ideal contacts, and are thus applicable on all length scales. Local thermal equilibrium is not assumed, because allowing the phonon distribution to be out-of-equilibrium is important for ballistic and quasi-ballistic transport. The key to including the non-equilibrium nature of the phonon population is to apply the proper boundary conditions to the heat equation. Simple analytical solutions are derived, showing that i) the magnitude of the temperature jumps is simply related to the material properties and ii) the observation of reduced apparent thermal conductivity physically stems from a reduction in the temperature gradient and not from a reduction in actual thermal conductivity. We demonstrate how our approach, equivalent to Fourier's law, easily reproduces results of the Boltzmann transport equation, in all transport regimes, even when using a full phonon dispersion and mean-free-path distribution.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Engineering Nanowire n-MOSFETs at Lg < 8 nm

As metal-oxide-semiconductor field-effect transistors (MOSFET) channel lengths (Lg) are scaled to lengths shorter than Lg<8 nm source-drain tunneling starts to become a major performance limiting factor. In this scenario a heavier transport mass can be used to limit source-drain (S-D) tunneling. Taking InAs and Si as examples, it is shown that different heavier transport masses can be engineered using strain and crystal orientation engineering. Full-band extended device atomistic quantum transport simulations are performed for nanowire MOSFETs at Lg<8 nm in both ballistic and incoherent scattering regimes. In conclusion, a heavier transport mass can indeed be advantageous in improving ON state currents in ultra scaled nanowire MOSFETs.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

An efficient algorithm to calculate intrinsic thermoelectric parameters based on Landauer approach

The Landauer approach provides a conceptually simple way to calculate the intrinsic thermoelectric (TE) parameters of materials from the ballistic to the diffusive transport regime. This method relies on the calculation of the number of propagating modes and the scattering rate for each mode. The modes are calculated from the energy dispersion (E(k)) of the materials which require heavy computation and often supply energy relation on sparse momentum (k) grids. Here an efficient method to calculate the distribution of modes (DOM) from a given E(k) relationship is presented. The main features of this algorithm are, (i) its ability to work on sparse dispersion data, and (ii) creation of an energy grid for the DOM that is almost independent of the dispersion data therefore allowing for efficient and fast calculation of TE parameters. The inclusion of scattering effects is also straight forward. The effect of k-grid sparsity on the compute time for DOM and on the sensitivity of the calculated TE results are provided. The algorithm calculates the TE parameters within 5% accuracy when the K-grid sparsity is increased up to 60% for all the dimensions (3D, 2D and 1D). The time taken for the DOM calculation is strongly influenced by the transverse K density (K perpendicular to transport direction) but is almost independent of the transport K density (along the transport direction). The DOM and TE results from the algorithm are bench-marked with, (i) analytical calculations for parabolic bands, and (ii) realistic electronic and phonon results for $Bi_{2}Te_{3}$.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

On the Best Bandstructure for Thermoelectric Performance

The conventional understanding that a bandstructure that produces a Dirac delta function transport distribution (or transmission in the Landauer framework) maximizes the thermoelectric figure of merit, ZT, is revisited. Thermoelectric (TE) performance is evaluated using a simple tight binding (TB) model for electron dispersion and three different scattering models: 1) a constant scattering time, 2) a constant mean-free-path, and 3) a scattering rate proportional to the density-of-states. We found that a Dirac delta-function transmission never produces the maximum ZT. The best bandstructure for maximizing ZT depends on the scattering physics. These results demonstrate that the selection of bandstructure to maximize TE performance is more complex than previously thought and that a high density-of-states near the band edge does not necessarily improve TE performance.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Relating electronic structure to thermoelectric device performance

Realistic thermoelectric modeling and simulation tools are needed to explain the experiments and for device design. In this paper, we present a simple computational technique to make use of rigorous band structure calculations in thermoelectric device design. Our, methodology, based on Landauer theory, provides a way to benchmark effective mass level models against rigorous band structures. It can also be used for determining the temperature-dependent Fermi-level from a given doping density and numerically generated density-of-states, which can then be used with the numerically generated distribution of channels to evaluate the temperature dependent electrical conductivity, thermopower, and electronic thermal conductivity. We illustrate the technique for silicon, for which well-calibrated band structure and transport data is available, but the technique is more generally suited to complex thermoelectric materials and provides an easy way to make use of first principles band structure calculations in device design.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Scaling of the energy gap in pattern-hydrogenated graphene

Recent experiments show that a substantial energy gap in graphene can be induced via patterned hydrogenation on an iridium substrate. Here, we show that the energy gap is roughly proportional to $\sqrt{N_{H}}/N_{C}$ when disorder is accounted for, where $N_H$ and $N_C$ denote concentration of hydrogen and carbon atoms, respectively. The dispersion relation, obtained through calculation of the momentum-energy resolved density of states, is shown to agree with previous angle-resolved photoemission spectroscopy results. Simulations of electronic transport in finite size samples also reveal a similar transport gap, up to 1eV within experimentally achievable $\sqrt{N_{H}}/N_{C}$ value.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Signatures of disorder in the minimum conductivity of graphene

Graphene has been proposed as a promising material for future nanoelectronics because of its unique electronic properties. Understanding the scaling behavior of this new nanomaterial under common experimental conditions is of critical importance for developing graphene-based nanoscale devices. We present a comprehensive experimental and theoretical study on the influence of edge disorder and bulk disorder on the minimum conductivity of graphene ribbons. For the first time, we discovered a strong non-monotonic size scaling behavior featuring a peak and saturation minimum conductivity. Through extensive numerical simulations and analysis, we are able to attribute these features to the amount of edge and bulk disorder in graphene devices. This study elucidates the quantum transport mechanisms in realistic experimental graphene systems, which can be used as a guideline for designing graphene-based nanoscale devices with improved performance.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Substrate Gating of Contact Resistance in Graphene Transistors

Metal contacts have been identified to be a key technological bottleneck for the realization of viable graphene electronics. Recently, it was observed that for structures that possess both a top and a bottom gate, the electron-hole conductance asymmetry can be modulated by the bottom gate. In this letter, we explain this observation by postulating the presence of an effective thin interfacial dielectric layer between the metal contact and the underlying graphene. Electrical results from quantum transport calculations accounting for this modified electrostatics corroborate well with the experimentally measured contact resistances. Our study indicates that the engineering of metal- graphene interface is a crucial step towards reducing the contact resistance for high performance graphene transistors.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Landauer vs. Boltzmann and Full Dispersion vs. Debye Model Evaluation of Lattice Thermal Conductivity

Using a full dispersion description of phonons, the thermal conductivities of bulk Si and Bi2Te3 are evaluated using a Landauer approach and related to the conventional approach based on the Boltzmann transport equation. A procedure to extract a well-defined average phonon mean-free-path from the measured thermal conductivity and given phonon-dispersion is presented. The extracted mean-free-path has strong physical significance and differs greatly from simple estimates. The use of simplified dispersion models for phonons is discussed, and it is shown that two different Debye temperatures must be used to treat the specific heat and thermal conductivity (analogous to the two different effective masses needed to describe the electron density and conductivity). A simple technique to extract these two Debye temperatures is presented and the limitations of the method are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

On Landauer vs. Boltzmann and Full Band vs. Effective Mass Evaluation of Thermoelectric Transport Coefficients

The Landauer approach to diffusive transport is mathematically related to the solution of the Boltzmann transport equation, and expressions for the thermoelectric parameters in both formalisms are presented. Quantum mechanical and semiclassical techniques to obtain from a full description of the bandstructure, E(k), the number of conducting channels in the Landauer approach or the transport distribution in the Boltzmann solution are developed and compared. Thermoelectric transport coefficients are evaluated from an atomistic level, full band description of a crystal. Several example calculations for representative bulk materials are presented, and the full band results are related to the more common effective mass formalism. Finally, given a full E(k) for a crystal, a procedure to extract an accurate, effective mass level description is presented.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Performance Analysis of a Ge/Si Core/Shell Nanowire Field Effect Transistor

We analyze the performance of a recently reported Ge/Si core/shell nanowire transistor using a semiclassical, ballistic transport model and an sp3s*d5 tight-binding treatment of the electronic structure. Comparison of the measured performance of the device with the effects of series resistance removed to the simulated result assuming ballistic transport shows that the experimental device operates between 60 to 85% of the ballistic limit. For this ~15 nm diameter Ge nanowire, we also find that 14-18 modes are occupied at room temperature under ON-current conditions with ION/IOFF=100. To observe true one dimensional transport in a <110> Ge nanowire transistor, the nanowire diameter would have to be much less than about 5 nm. The methodology described here should prove useful for analyzing and comparing on common basis nanowire transistors of various materials and structures.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays

Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self aligned geometries, palladium electrodes with low contact resistance and high-k dielectric gate insulators are realized. Electrical transport in these miniature transistors is near ballistic up to high biases at both room and low temperatures. Atomic layer deposited (ALD) high-k films interact with nanotube sidewalls via van der Waals interactions without causing weak localization at 4 K. New fundamental understanding of ballistic transport, optical phonon scattering and potential interfacial scattering mechanisms in nanotubes are obtained.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

Carbon Nanotube Field-Effect Transistors With Integrated Ohmic Contacts and High-k Gate Dielectrics

High performance enhancement mode semiconducting carbon nanotube field-effect transistors (CNTFETs) are obtained by combining ohmic metal-tube contacts, high dielectric constant HfO2 films as gate insulators, and electrostatically doped nanotube segments as source/drain electrodes. The combination of these elements affords high ON currents, subthreshold swings of ~ 70-80 mV/decade, and allows for low OFF currents and suppressed ambipolar conduction. The doped source and drain approach resembles that of MOSFETs and can impart excellent OFF states to nanotube FETs under aggressive vertical scaling. This presents an important advantage over devices with metal source/drain, or devices commonly referred to as Schottky barrier FETs.

0 citations0 reviewsNo code linkedOpen access