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Researcher profile

Mark B. H. Breese

Mark B. H. Breese contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elphysics.app-phcond-mat.mes-hallphysics.optics

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Published work

4 published item(s)

preprint2026arXiv

Contact resistance and interfacial engineering: Advances in high-performance 2D-TMD based devices

The development of advanced electronic devices is contingent upon sustainable material development and pioneering research breakthroughs. Traditional semiconductor-based electronic technology faces constraints in material thickness scaling and energy efficiency. Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as promising candidates for next-generation nanoelectronics and optoelectronic applications, boasting high electron mobility, mechanical strength, and a customizable band gap. Despite these merits, the Fermi level pinning effect introduces uncontrollable Schottky barriers at metal-2D-TMD contacts, challenging prediction through the Schottky-Mott rule. These barriers fundamentally lead to elevated contact resistance and limited current-delivery capability, impeding the enhancement of 2D-TMD transistor and integrated circuit properties. In this review, we succinctly outline the Fermi pinning effect mechanism and peculiar contact resistance behavior at metal/2D-TMD interfaces. Subsequently, highlights on the recent advances in overcoming contact resistance in 2D-TMDs devices, encompassing interface interaction and hybridization, van der Waals (vdW) contacts, prefabricated metal transfer and charge-transfer doping will be addressed. Finally, the discussion extends to challenges and offers insights into future developmental prospects.

0 citations0 reviewsNo code linkedOpen access
preprint2025arXiv

Interfacial Strain Modulated Correlated Plasmons in La1.85Sr0.15CuO4 and Their Role in High-temperature Superconductivity

High-temperature superconductivity in cuprate materials remains a major challenge in physics due to the complexity of their strongly correlated electronic states. Interfacial strain is a powerful lever for tuning electronic correlations in complex oxides, offering new pathways to control emergent quantum phases. Here, we report the discovery of interfacial strain modulated correlated plasmons observed exclusively in superconducting La1.85Sr0.15CuO4 (LSCO) through spectroscopic ellipsometry. This form of plasmons is absent in the non-superconducting LSCO counterparts. Detailed analysis reveals that these correlated plasmons, arising from the collective excitations within Mott-correlated bands, are driven by long-range electronic correlations in the Cu-O planes. Furthermore, long-range electronic correlations, intricately modulated by interfacial strain, may play a crucial role in the emergence of superconductivity and in tuning the transition temperature. Dynamical cluster approximation (DCA) with quantum Monte Carlo (QMC) calculations of the extended Hubbard model suggest that long-range Coulomb interactions play an important role in LSCO, showing good agreement with our experimental findings. The collective evidence from both the experimental results and theoretical findings provides new insights into the nature of collective excitations and their pivotal role in the emergence of high-temperature superconductivity.

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preprint2021arXiv

A two-dimensional electron gas based on a 5s oxide with high room-temperature mobility and strain sensitivity

The coupling of optical and electronic degrees of freedom together with quantum confinement in low-dimensional electron systems is particularly interesting for achieving exotic functionalities in strongly correlated oxide electronics. Recently, high room-temperature mobility has been achieved for a large bandgap transparent oxide - BaSnO$_3$ upon extrinsic La or Sb doping, which has excited significant research attention. In this work, we report the observation of room-temperature ferromagnetism in BaSnO$_3$ thin films and the realization of a two-dimensional electron gas (2DEG) on the surface of transparent BaSnO$_3$ via oxygen vacancy creation, which exhibits a high carrier density of $\sim 7.72*10^{14} /{\rm cm}^2$ and a high room-temperature mobility of ~18 cm$^2$/V/s. Such a 2DEG is rather sensitive to strain and a less than 0.1% in-plane biaxial compressive strain leads to a giant resistance enhancement of 350% (more than 540 kOhm/Square) at room temperature. Thus, this work creates a new path to exploring the physics of low-dimensional oxide electronics and devices applicable at room temperature.

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preprint2021arXiv

Room temperature ferromagnetism of monolayer chromium telluride with perpendicular magnetic anisotropy

The realization of long-range magnetic ordering in two-dimensional (2D) systems can potentially revolutionize next-generation information technology. Here, we report the successful fabrication of crystalline Cr3Te4 monolayers with room temperature ferromagnetism. Using molecular beam epitaxy, the growth of 2D Cr3Te4 films with monolayer thickness is demonstrated at low substrate temperatures (~100C), compatible with Si CMOS technology. X-ray magnetic circular dichroism measurements reveal a Curie temperature (Tc) of ~344 K for the Cr3Te4 monolayer with an out-of-plane magnetic easy axis, which decreases to ~240 K for the thicker film (~ 7 nm) with an in-plane easy axis. The enhancement of ferromagnetic coupling and the magnetic anisotropy transition is ascribed to interfacial effects, in particular the orbital overlap at the monolayer Cr3Te4/graphite interface, supported by density-functional theory calculations. This work sheds light on the low-temperature scalable growth of 2D nonlayered materials with room temperature ferromagnetism for new magnetic and spintronic devices.

0 citations0 reviewsNo code linkedOpen access