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Marek Korkusinski

Marek Korkusinski appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elquant-ph

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Published work

12 published item(s)

preprint2026arXiv

Magnetoexcitons and Massive Dirac Fermions in Monolayers of Transition Metal Dichalcogenides in a High Magnetic Field

We present a theory of the emission spectrum of magnetoexcitons interacting with a $ν= 1$ quantum Hall state of massive Dirac fermions in monolayer transition metal dichalcogenides in high magnetic fields. Using an ab initio-parametrized massive Dirac fermion model including valley and spin degrees of freedom, combined with exact diagonalization techniques, we show that interband emission from the massive Dirac Fermion magnetoexciton interacting with $ν= 1$ state directly probes intra-conduction-band excitations of the $ν= 1$. Many-body interactions with the filled massive Dirac fermion $ν= 1$ level yield a strong renormalization of the emission spectrum, including fully polarized emission, a pronounced redshift, and broadening relative to neutral and charged excitons. The calculated spectra are consistent with recent experiments [1-3], establishing magneto-spectroscopy as a probe of finite carrier densities in massive Dirac systems.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Quantum simulator of extended bipartite Hubbard model with broken sublattice symmetry: magnetism, correlations, and phase transitions

We describe here a quantum simulator of extended bipartite Hubbard model with broken sublattice symmetry. The simulator consists of a structured lateral gate confining two dimensional electrons in a quantum well into artificial minima arranged in a hexagonal lattice. The sublattice symmetry breaking is generated by forming an artificial triangular graphene quantum dot (ATGQD) with zigzag edges. The resulting extended Hubbard model generates tunable ratio of tunneling strength to electron-electron interactions and of sublattice symmetry with control over shape. The validity of the simulator is confirmed for small systems using mean-field and exact diagonalization many-body approaches which show that the ground state changes from a metallic to an antiferromagnetic (AF) phase by varying the distance between sites or depth of the confining potential. The one-electron spectrum of these triangular dots contains a macroscopically degenerate shell at the Fermi level. The shell persists at the mean-field level for weak interactions (metallic phase) but disappears for strong interactions, in the AF phase. We determine the effects of electron-electron interactions on the ground state, the total spin, and the excitation spectrum as a function of filling of the ATGQD. We find that the half-filled charge neutral shell leads to a partially spin polarized state in both metallic and AF regimes in accordance with Liebs theorem. In both regimes a relatively large gap separates the spin polarized ground state to the first excited many-body state at half filling of the degenerate shell. By adding or removing an electron, this gap drops dramatically, and alternate total spin states emerge with energies nearly degenerate to a spin polarized ground state.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Accurate and efficient description of interacting carriers in quantum nanostructures by selected configuration interaction and perturbation theory

We present a method to calculate many-body states of interacting carriers in million atom quantum nanostructures based on atomistic tight-binding calculations and a combination of iterative selection of configurations and perturbation theory. This method enables investigations of large excitonic complexes and multi-electron systems with near full configuration interaction accuracy, even though only a small subspace of the full many-body Hilbert space is sampled, thus saving orders of magnitudes in computational resources. Important advantages of this method are that the convergence is controlled by a single parameter, the threshold, and that ground and excited states can be treated on an equal footing. We demonstrate the extreme efficiency of the method by numerical studies of complexes composed of up to 13 excitons, which requires filling of states up to the fourth electronic shell. We find that the method generally converges fast as a function of the threshold, profiting from a significant enhancement due to the perturbative corrections. The role of the choice of single-particle basis states is discussed. It is found that the algorithm converges faster in the Hartree-Fock basis only for highly charged systems, where Coulomb repulsion dominates. Finally, based on the observation that second order perturbative energy corrections only depend on off-diagonal elements of the many-body Hamiltonian, we present a way to accurately calculate many-body states that requires only a relatively small number of Coulomb matrix elements.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Atomistic theory of electronic and optical properties of InAsP/InP nanowire quantum dots

We present here an atomistic theory of the electronic and optical properties of hexagonal InAsP quantum dots in InP nanowires in the wurtzite phase. These self-assembled quantum dots are unique in that their heights, shapes, and diameters are well known. Using a combined valence-force-field, tight-binding, and configuration-interaction approach we perform atomistic calculations of single-particle states and excitonic, biexcitonic and trion complexes as well as emission spectra as a function of the quantum dot height, diameter and As versus P concentration. The atomistic tight-binding parameters for InAs and InP in the wurtzite crystal phase were obtained by ab initio methods corrected by empirical band gaps. The low energy electron and hole states form electronic shells similar to parabolic or cylindrical quantum confinement, only weakly affected by hexagonal symmetry and As fluctuations. The relative alignment of the emission lines from excitons, trions and biexcitons agrees with that for InAs/InP dots in the zincblende phase in that biexcitons and positive trions are only weakly bound. The random distribution of As atoms leads to dot-to-dot fluctuations of a few meV for the single-particle states and the spectral lines. Due to the high symmetry of hexagonal InAsP nanowire quantum dots the exciton fine structure splitting is found to be small, of the order a few $μ$eV with significant random fluctuations in accordance with experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electron-Electron interactions, topological phase and optical properties of a charged artificial benzene ring

We present a theory of the electronic and optical properties of a charged artificial benzene ring (ABR). The ABR is described by the extended Hubbard model solved using exact diagonalization methods in both real and Fourier space as a function of tunneling matrix element t, Hubbard on-site repulsion U and inter-dot interaction V. In the strongly interacting case we present exact analytical results for the spectrum of the hole in a half-filled ABR dressed by spin excitations of remaining electrons. The spectrum is interpreted in terms of the appearance of a topological phase associated with an effective gauge field piercing through the ring. We show that the maximally spin polarized (S=5/2) and maximally spin depolarised (S=1/2) states are the lowest energy, orbitally non degenerate, states. We discuss the evolution of the phase diagram and level crossings as interactions are switched off and the ground state becomes spin non-degenerate but orbitally degenerate S=1/2. We present a theory of optical absorption spectra and show that the evolution of the ground and excited states, level crossings and presence of artificial gauge can be detected optically.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electron-electron interaction mediated indirect coupling of electron and magnetic ion or nuclear spins in self-assembled quantum dots

We show here the existence of the indirect coupling of electron and magnetic or nuclear ion spins in self-assembled quantum dots mediated by electron-electron interactions. With a single localized spin placed in the center of the dot, only the spins of electrons occupying the zero angular momentum states couple directly to the localized spin. We show that when the electron-electron interactions are included, the electrons occupying finite angular momentum orbitals interact with the localized spin. This effective interaction is obtained using exact diagonalization of the microscopic Hamiltonian as a function of the number of electronic shells, shell spacing, and anisotropy of the electron-Mn exchange interaction. The effective interaction can be engineered to be either ferromagnetic or antiferromagnetic by tuning the parameters of the quantum dot.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Quantum strain sensor with a topological insulator HgTe quantum dot

We present a theory of electronic properties of HgTe quantum dot and propose a strain sensor based on a strain-driven transition from a HgTe quantum dot with inverted bandstructure and robust topologically protected quantum edge states to a normal state without edge states in the energy gap. The presence or absence of edge states leads to large on/off ratio of conductivity across the quantum dot, tunable by adjusting the number of conduction channels in the source-drain voltage window. The electronic properties of a HgTe quantum dot as a function of size and applied strain are described using eight-band kp Luttinger and Bir-Pikus Hamiltonians, with surface states identified with chirality of Luttinger spinors and obtained through extensive numerical diagonalization of the Hamiltonian.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin textures in strongly coupled electron spin and magnetic or nuclear spin systems in quantum dots

Controlling electron spins strongly coupled to magnetic and nuclear spins in solid state systems is an important challenege in the field of spintronics and quantum computation. We show here that electron droplets with no net spin in semiconductor quantum dots strongly coupled with magnetic ion/nuclear spin systems break down at low temperature and form a non-trivial anti-ferromagnetic spatially ordered spin-texture of magneto-polarons. The spatially ordered combined electron-magnetic ion spin-texture, associated with spontaneous symmetry-breaking in the parity of electronic charge density and magnetization of magnetic ions, emerge from both ab-initio density functional approach to the electronic system coupled with mean-field approximation for the magnetic/nuclear spin system and fully mircoscopic exact diagonalization of small systems. The predicted phase diagram determines the critical temperature as a function of coupling strength and identifies possible phases of the strongly coupled spin system. This prediction may arrest fluctuations in spin system and open the way to control, manipulate and prepare magnetic and nuclear spin ensembles in semiconductor nanostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Theory of highly excited semiconductor nanostructures including Auger coupling: exciton-bi-exciton mixing in CdSe nanocrystals

We present a theory of highly excited interacting carriers confined in a semiconductor nanostructure, incorporating Auger coupling between excited states with different number of excitations. The Coulomb matrix elements connecting exciton, bi-exciton and tri-exciton complexes are derived and an intuitive picture of breaking neutral multi-exction complexes into positively and negatively charged multi-exciton complexes is given. The general approach is illustrated by analyzing the coupling of biexciton and exciton in CdSe spherical nanocrystals. The electron and hole states are computed using atomistic $sp^3d^5s^*$ tight binding Hamiltonian including an effective crystal field splitting and surface passivation. For each number of electron-hole pairs the many-body spectrum is computed in the configuration-interaction approach. The low-energy correlated biexciton levels are broken into charged complexes: a hole and a negatively charged trion and an electron and a positively charged trion. Out of a highly excited exciton spectrum a subspace coupled to bi-exciton levels via Auger processes is identified. The interaction between correlated bi-exciton and exciton states is treated using exact diagonalization techniques. This allows to extract the spectral function of the biexciton and relate its characteristic width and amplitude to the characteristic amplitude and timescale of the coherent time evolution of the coupled system. It is shown that this process can be described by the Fermi's Golden Rule only if a fast relaxation of the excitonic subsystem is accounted for.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Fine structure and size dependence of exciton and bi-exciton optical spectra in CdSe nanocrystals

Theory of electronic and optical properties of exciton and bi-exciton complexes confined in CdSe spherical nanocrystals is presented. The electron and hole states are computed using atomistic $sp^3d^5s^*$ tight binding Hamiltonian including an effective crystal field splitting, spin-orbit interactions, and model surface passivation. The optically excited states are expanded in electron-hole configurations and the many-body spectrum is computed in the configuration-interaction approach. Results demonstrate that the low-energy electron spectrum is organized in shells ($s$, $p$, ...), whilst the valence hole spectrum is composed of four low-lying, doubly degenerate states separated from the rest by a gap. As a result, the bi-exciton and exciton spectrum is composed of a manifold of closely lying states, resulting in a fine structure of exciton and bi-exciton spectra. The quasi-degenerate nature of the hole spectrum results in a correlated bi-exciton state, which makes it slowly convergent with basis size. We carry out a systematic study of the exciton and bi-exciton emission spectra as a function of the nanocrystal diameter and find that the interplay of repulsion between constituent excitons and correlation effects results in a change of the sign of bi-exciton binding energy from negative to positive at a critical nanocrystal size.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Valence holes as Luttinger spinor based qubits in quantum dots

We present a theory of valence holes as Luttinger spinor based qubits in p-doped self-assembled quantum dots within the 4-band $k\cdot p$ formalism. The two qubit levels are identified with the two chiralities of the doubly degenerate ground state. We show that single qubit operations can be implemented with static magnetic field applied along the $z$ and $x$ directions, acting analogously to the $\hatσ_z$ and $\hatσ_x$ operators in the qubit subspace respectively. The coupling of two dots and hence the double qubit operations are shown to be sensitive to the orientation of the two quantum dots. For vertical qubit arrays, there exists an optimal qubit separation suitable for the voltage control of qubit-qubit interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Topological Hunds rules and the electronic properties of a triple lateral quantum dot molecule

We analyze theoretically and experimentally the electronic structure and charging diagram of three coupled lateral quantum dots filled with electrons. Using the Hubbard model and real-space exact diagonalization techniques we show that the electronic properties of this artificial molecule can be understood using a set of topological Hunds rules. These rules relate the multi-electron energy levels to spin and the inter-dot tunneling $t$, and control charging energies. We map out the charging diagram for up to N=6 electrons and predict a spin-polarized phase for two holes. The theoretical charging diagram is compared with the measured charging diagram of the gated triple-dot device.

0 citations0 reviewsNo code linkedOpen access