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Researcher profile

Marco Sampietro

Marco Sampietro contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.opticscond-mat.mes-hall

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Published work

4 published item(s)

preprint2014arXiv

ContactLess Integrated Photonic Probe for light monitoring in InP-based devices

The increasing complexity of photonic integrated circuits requires the possibility to monitor the state of the circuit in order to stabilize the working point against environmental fluctuations or to perform reliable reconfiguration procedures. Although InP technologies can naturally integrate high-quality photodiodes, their use as tap monitors necessarily affects the circuit response and is restricted to few units per chip. They are hence unsuited for very large circuits, where transparent power monitors become key components. In this paper we present the implementation of a ContactLess Integrated Photonic Probe (CLIPP) realizing a non invasive integrated light monitor on InP-based devices. We describe an innovative vertical scheme of the CLIPP monitor which exploits the back side of the chip as a common electrode, thus enabling a reduction of the device footprint and a simplification of the electrical connectivity. We characterize the response of the CLIPP and demonstrate its functionality as power monitor. Lastly, we provide a direct demonstration that CLIPP monitor allows to access more accurate information on the working point of photonic integrated circuits compared to conventional external or integrated photodetectors.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Non-invasive monitoring and control in silicon photonics by CMOS integrated electronics

As photonics breaks away from today's device level toward large scale of integration and complex systems-on-a-chip, concepts like monitoring, control and stabilization of photonic integrated circuits emerge as new paradigms. Here, we show non-invasive monitoring and feedback control of high quality factor silicon photonics resonators assisted by a transparent light detector directly integrated inside the cavity. Control operations are entirely managed by a CMOS microelectronic circuit, hosting many parallel electronic read-out channels, that is bridged to the silicon photonics chip. Advanced functionalities, such as wavelength tuning, locking, labeling and swapping are demonstrated. The non-invasive nature of the transparent monitor and the scalability of the CMOS read-out system offer a viable solution for the control of arbitrarily reconfigurable photonic integrated circuits aggregating many components on a single chip.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Non-invasive light observer

Photonic technologies lack non-invasive monitoring tools to inspect the light inside optical waveguides. This is one of the main barriers to large scale of integration, even though photonic platforms are potentially ready to host several thousands of elements on a single chip. Here, we demonstrate non-invasive light observation in silicon photonics devices by exploiting photon interaction with intra-gap energy states localized at the waveguide surface. Light intensity is measured through a ContactLess Integrated Photonic Probe (CLIPP) that introduces no measurable extra-photon absorption and a phase perturbation as low as 0.2 mrad, comparable to thermal fluctuations of less than 3 mK. Multipoint light monitoring is demonstrated with a sensitivity of -30 dBm and a dynamic range of 40 dB. CLIPP technology is simple, inherently CMOS compatible, and scalable to hundreds of probing points per chip. This concept provides a viable way to real-time conditioning and feedback control of densely-integrated photonic systems.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Time Dependent Inelastic Emission and Capture of Localized Electrons in Si n-MOSFETs Under Microwave Irradiation

Microwave irradiation causes voltage fluctuations in solid state nanodevices. Such an effect is relevant in atomic electronics and nanostructures for quantum information processing, where charge or spin states are controlled by microwave fields and electrically detected. Here the variation of the characteristic times of the multiphonon capture and emission of a single electron by an interface defect in submicron MOSFETs is calculated and measured as a function of the microwave power, whose frequency of the voltage modulation is assumed to be large if compared to the inverse of the characteristic times. The variation of the characteristic times under microwave irradiation is quantitatively predicted from the microwave frequency dependent stationary current generated by the voltage fluctuations itself. The expected values agree with the experimental measurements. The coupling between the microwave field and either one or two terminals of the device is discussed. Some consequences on nanoscale device technology are drawn.

0 citations0 reviewsNo code linkedOpen access