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Marcelo J. Rozenberg

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cond-mat.str-el cond-mat.mtrl-sci cond-mat.mes-hall cond-mat cond-mat.supr-con

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preprint2023arXiv

Characteristic lengthscales of the electrically-induced insulator-to-metal transition

Some correlated materials display an insulator-to-metal transition as the temperature is increased. In most cases this transition can also be induced electrically, resulting in volatile resistive switching due to the formation of a conducting filament. While this phenomenon has attracted much attention due to potential applications, many fundamental questions remain unaddressed. One of them is its characteristic lengths: what sets the size of these filaments, and how does this impact resistive switching properties. Here we use a combination of wide-field and scattering-type scanning near-field optical microscopies to characterize filament formation in NdNiO3 and SmNiO3 thin films. We find a clear trend: smaller filaments increase the current density, yielding sharper switching and a larger resistive drop. With the aid of numerical simulations, we discuss the parameters controlling the filament width and, hence, the switching properties.

preprint2022arXiv

Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in V$_2$O$_3$

In solids, strong repulsion between electrons can inhibit their movement and result in a "Mott" metal-to-insulator transition (MIT), a fundamental phenomenon whose understanding has remained a challenge for over 50 years. A key issue is how the wave-like itinerant electrons change into a localized-like state due to increased interactions. However, observing the MIT in terms of the energy- and momentum-resolved electronic structure of the system, the only direct way to probe both itinerant and localized states, has been elusive. Here we show, using angle-resolved photoemission spectroscopy (ARPES), that in V$_2$O$_3$ the temperature-induced MIT is characterized by the progressive disappearance of its itinerant conduction band, without any change in its energy-momentum dispersion, and the simultaneous shift to larger binding energies of a quasi-localized state initially located near the Fermi level.

preprint2022arXiv

Phenomenological classification of metals based on resistivity

Efforts to understand metallic behaviour have led to important concepts such as those of strange metal, bad metal or Planckian metal. However, a unified description of metallic resistivity is still missing. An empirical analysis of a large variety of metals shows that the parallel resistor formalism used in the cuprates, which includes T-linear and T-quadratic dependence of the electron scattering rates, can be used to provide a phenomenological description of the electrical resistivity in all metals, where these two contributions are shown to correspond to the two first terms of a Taylor expansion of the resistivity, detached of their physics origin, and thus, valid for any metal. Here we show that the different metallic classes are then determined by the relative magnitude of these two components and the magnitude of the extrapolated residual resistivity. These two parameters allow to categorize a few systems that are notoriously hard to ascribe to one of the currently accepted metallic classes. This approach also reveals that the T-linear term has a common origin in all cases, strengthening the arguments that propose the universal character of the Planckian dissipation bound.

preprint2020arXiv

Disordered Mott-Hubbard Physics in Nanoparticle Solids: Persistent Gap Across the Disorder-localized-to-Mott-localized Transition

We show that Nanoparticle (NP) solids are an exciting platform to seek new insights into the disordered Mott-Hubbard physics. We developed a "Hierarchical Nanoparticle Transport Simulator" (HINTS), which builds from localized states to describe the Disorder-localized and Mott-localized phases, and the transitions out of these localized phases. We also studied the interplay between correlations and disorder in the corresponding multi-orbital Hubbard model at and away from integer filling by Dynamical Mean Field Theory. This approach is complementary to HINTS, as it builds from the metallic phase of the NP solid. The mobility scenarios and phase diagrams produced by the two methods are strikingly similar, and account for the mobilities measured in NP solids.

preprint2020arXiv

Odd-frequency superconductivity in dilute magnetic superconductors

We show that dilute magnetic impurities in a conventional superconductor give origin to an odd-frequency component of superconductivity, manifesting itself in Yu-Shiba-Rusinov bands forming within the bulk superconducting gap. Our results are obtained in a general model solved within the dynamical mean field theory. By exploiting a disorder analysis and the limit to a single impurity, we are able to provide general expressions that can be used to extract explicitly the odd-frequency superconducting function from scanning tunneling measurements.

preprint2016arXiv

Magnetism, spin texture and in-gap states: Atomic specialization at the surface of oxygen-deficient SrTiO$_3$

Motivated by recent spin- and angular-resolved photoemission (SARPES) measurements performed on the two-dimensional electronic states confined near the (001) surface of SrTiO$_3$ in the presence of oxygen vacancies, we explore their spin structure by means of ab initio density functional theory (DFT) calculations of slabs. Relativistic nonmagnetic DFT calculations display Rashba-like spin winding with a splitting of a few meV and when surface magnetism on the Ti ions is in- cluded, bands become spin-split with an energy difference ~100 meV at the $Γ$ point, consistent with SARPES findings. While magnetism tends to suppress the effects of the relativistic Rashba interaction, signatures of it are still clearly visible in terms of complex spin textures. Furthermore, we observe an atomic specialization phenomenon, namely, two types of electronic contributions: one is from Ti atoms neighboring the oxygen vacancies that acquire rather large magnetic moments and mostly create in-gap states; another comes from the partly polarized t$_{2g}$ itinerant electrons of Ti atoms lying further away from the oxygen vacancy, which form the two-dimensional electron system and are responsible for the Rashba spin winding and the spin splitting at the Fermi surface.

preprint2013arXiv

Enhanced and continuous electrostatic carrier doping on the SrTiO$_{3}$ surface

Paraelectrical tuning of a charge carrier density as high as 10$^{13}$\,cm$^{-2}$ in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. Here we introduce the Parylene-C/Ta$_{2}$O$_{5}$ hybrid gate insulator and fabricate FET devices on single-crystalline SrTiO$_{3}$, which has been regarded as a bedrock material for oxide electronics. The gate insulator accumulates up to $\sim10^{13}$cm$^{-2}$ carriers, while the field-effect mobility is kept at 10\,cm$^2$/Vs even at room temperature. Further to the exceptional performance of our devices, the enhanced compatibility of high carrier density and high mobility revealed the mechanism for the long standing puzzle of the distribution of electrostatically doped carriers on the surface of SrTiO$_{3}$. Namely, the formation and continuous evolution of field domains and current filaments.

preprint2004arXiv

Dynamical Mean Field Theory with the Density Matrix Renormalization Group

A new numerical method for the solution of the Dynamical Mean Field Theory's self-consistent equations is introduced. The method uses the Density Matrix Renormalization Group technique to solve the associated impurity problem. The new algorithm makes no a priori approximations and is only limited by the number of sites that can be considered. We obtain accurate estimates of the critical values of the metal-insulator transitions and provide evidence of substructure in the Hubbard bands of the correlated metal. With this algorithm, more complex models having a larger number of degrees of freedom can be considered and finite-size effects can be minimized.

preprint1994arXiv

The Metal-Insulator Transition in the Hubbard Model at Zero Temperature II

We study the metal-to-insulator transition of the Hubbard model at zero temperatures in infinite dimensions. The coexistence of metallic and insulating solutions for a finite range of the interaction is established. It is shown that the metallic solution is lower in energy for any interaction in the coexistence region and that the transition is of second order.