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Alberto Camjayi

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cond-mat.mes-hall cond-mat.str-el cond-mat.mtrl-sci

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preprint2020arXiv

Disordered Mott-Hubbard Physics in Nanoparticle Solids: Persistent Gap Across the Disorder-localized-to-Mott-localized Transition

We show that Nanoparticle (NP) solids are an exciting platform to seek new insights into the disordered Mott-Hubbard physics. We developed a "Hierarchical Nanoparticle Transport Simulator" (HINTS), which builds from localized states to describe the Disorder-localized and Mott-localized phases, and the transitions out of these localized phases. We also studied the interplay between correlations and disorder in the corresponding multi-orbital Hubbard model at and away from integer filling by Dynamical Mean Field Theory. This approach is complementary to HINTS, as it builds from the metallic phase of the NP solid. The mobility scenarios and phase diagrams produced by the two methods are strikingly similar, and account for the mobilities measured in NP solids.

preprint2019arXiv

Non-Thermal Resistive Switching in Mott Insulators

Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and brain-inspired technology. Despite this, the roles of electric field and Joule heating in the switching process remain controversial. We resolve this issue by studying nanowires of two archetypical Mott insulators - VO2 and V2O3. Our findings show a crossover between two qualitatively different regimes. In one, the IMT is driven by Joule heating to the transition temperature, while in the other, field-assisted carrier generation gives rise to a doping driven IMT which is purely non-thermal. By identifying the key material properties governing these phenomena, we propose a universal mechanism for resistive switching in Mott insulators. This understanding enabled us to control the switching mechanism using focused ion-beam irradiation, thereby facilitating an electrically driven non-thermal IMT. The energy consumption associated with the non-thermal IMT is extremely low, rivaling that of state of the art electronics and biological neurons. These findings pave the way towards highly energy-efficient applications of Mott insulators.

preprint2016arXiv

Transport in quantum spin Hall edges in contact to a quantum dot

We study the transport mechanisms taking place in a quantum spin Hall bar with an embedded quantum dot, where electrons localize and experience Coulomb interaction U as well as spin-flip processes λ. We solve the problem with non-equilibrium Green functions. We focus on the linear response regime and treat the many-body interactions with quantum Monte Carlo. The effects of U and λ are competitive and the induced transport takes place through different channels. The two mechanisms can be switched by changing the occupation of the dot with a gate voltage.

preprint2013arXiv

Mesoscopic features in the transport properties of a Kondo-correlated quantum dot in a magnetic field

We study the transport behavior induced by a small bias voltage through a quantum dot connected to one-channel finite-size wires. We describe the quantum dot by the Hubbard-Kondo which is solved by means of a quantum Monte Carlo method. We investigate the effect of a magnetic field applied at the quantum dot in the Kondo regime. We identify changes in the behavior of mesoscopic oscillations introduced by the magnetic field that have an analogous behavior to those observed as a function of the temperature.

preprint2012arXiv

Conductance of a quantum dot in the Kondo regime connected to dirty wires

We study the transport behavior induced by a small bias voltage through a quantum dot connected to one-channel disordered wires by means of a quantum Monte Carlo method. We model the quantum dot by the Hubbard-Anderson impurity and the wires by the one-dimensional Anderson model with diagonal disorder within a length. We present a complete description of the probability distribution function of the conductance within the Kondo regime.

preprint2010arXiv

Extended Hubbard model: Charge Ordering and Wigner-Mott transition

Strong correlation effects, which are often associated to the approach to a Mott insulating state, in some cases may be observed even far from half-filling. This typically happens whenever the inter-site Coulomb repulsion induces a tendency towards charge ordering, an effect that confines the electrons, and in turn favors local moment formation, i.e. Mott localization. A distinct intermediate regime then emerges as a precursor of such a Wigner-Mott transition, which is characterized by both charge and spin correlations, displaying large mass enhancements and strong renormalizations of other Fermi liquid parameters. Here we present a careful study of a quarter filled extended Hubbard model - a simple example where such physics can be studied in detail, and discuss its relevance for the understanding of the phenomenology of low-density two dimensional electron gases.