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Researcher profile

Mansoor B. A. Jalil

Mansoor B. A. Jalil contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciquant-ph

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Published work

8 published item(s)

preprint2021arXiv

Giant anisotropic photocurrent modulated by strain in type-II Weyl semimetal Td-MoTe2

We build a Cu-MoTe2-Cu device model and use first-principles density functional theory to study the transport properties of single-layer Td-MoTe2. We obtained the effect of strain on the energy band structure, transport properties, and photocurrent. The strain-induced photocurrent shows an anisotropy that reflects the modulation of the energy bands, including the Weyl point, by strain. The photocurrent can be suppressed to almost zero when the strain is applied along the vacuum direction. In contrast, the photocurrent can be significantly increased when the strain is applied along the transport direction. The transport properties and magnitude of the photocurrent in the MoTe2-based device can be effectively modulated by adjusting the strength and direction of the strain.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Higher Chern Number States in Curved Periodic Nanowires

The coupling between the spin and momentum degrees of freedom due to spin-orbit interactions (SOI) suggests that the strength of the latter can be modified by controlling the motion of the charge carriers. In this paper, we investigate how the effective SOI can be modulated by constraining the motion of charge carriers to curved waveguides thereby introducing real-space geometric curvature in their motion. The change in the SOI can in turn induce topological phase transitions in the system. Specifically, we study how the introduction of periodic sinusoidal curvature in nanowires with intrinsic SOC can induce the onset of mid-gap topologically protected edge states, which can be characterized by a topological invariant or Chern number. The Chern number corresponds to the number of discrete charges that would be pumped across the length of the nanowire when the phase of a sliding gate potential relative to that of the sinusoidal curvature is varied adiabatically over a complete period. In addition, coupling to an external magnetization can be utilized as an experimental knob to modify the Chern number by changing the ordering of the nanowire energy bands. The magnetization can be tuned to achieve large discrete jumps in the number of pump charges per phase period.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Non-Hermitian topological phases and exceptional lines in topolectrical circuits

We propose a scheme to realize various non-Hermitian topological phases in a topolectrical (TE) circuit network consisting of resistors, inductors, and capacitors. These phases are characterized by topologically protected exceptional points and lines. The positive and negative resistive couplings Rg in the circuit provide loss and gain factors which break the Hermiticity of the circuit Laplacian. By controlling Rg, the exceptional lines of the circuit can be modulated, e.g., from open curves to closed ellipses in the Brillouin zone. In practice, the topology of the exceptional lines can be detected by the impedance spectra of the circuit. We also considered finite TE systems with open boundary conditions, the admittance spectrum of which exhibits highly tunable zero-admittance states demarcated by boundary points (BPs). The phase diagram of the system shows topological phases which are characterized by the number of their BPs. The transition between different phases can be controlled by varying the circuit parameters and tracked via impedance readout between the terminal nodes. Our TE model offers an accessible and tunable means of realizing different topological phases in a non-Hermitian framework, and characterizing them based on their boundary point and exceptional line configurations.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Valley-dependent transport in strain engineering graphene heterojunctions

We study the effect of the strain on the band structure and the valley-dependent transport property of graphene heterojunctions. It is found that valley-dependent separation of electrons can be achieved by utilizing the strain and on-site energies. In the presence of the strain, the values of the transmission can be effectively adjusted by changing the strengths of the strain, while the transport angle basically keeps unchanged. When an extra on-site energy is simultaneously applied to the central scattering region, not only are the electrons of valleys K and K' separated into two distinct transmission lobes in opposite transverse directions, but the transport angles of two valleys can be significantly changed. Therefore, one can realize an effective modulation of valley-dependent transport by changing the strength and stretch angle of the strain and on-site energies, which can be exploited for graphene-based valleytronics devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Sustainable spin current in the time-dependent Rashba system

The generation of spin current and spin polarization in 2DEG Rashba system is considered, in which the spin-orbital coupling (SOC) is modulated by an ac gate voltage. By using non-Abelian gauge field method, we show the presence of an additional electric field. This field induces a spin current generated even in the presence of impurity scattering and is related to the time-modulation of the Rashba SOC strength. In addition, the spin precession can be controlled by modulating the modulation frequency of the Rashba SOC strength. It is shown that at high modulation frequency, the precessional motion is suppressed so that the electron spin polarization can be sustained in the 2DEG

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preprint2020arXiv

Tunable spin and orbital polarization in SrTiO3-based heterostructures

We formulate the effective Hamiltonian of Rashba spin-orbit coupling (RSOC) in $\mathrm{LaAlO_3/SrTiO_3}$ (LAO/STO) heterostructures. We derive analytical expressions of properties, e.g., Rashba parameter, effective mass, band edge energy and orbital occupancy, as functions of material and tunable heterostructure parameters. While linear RSOC is dominant around the $Γ$-point, cubic RSOC becomes significant at the higher-energy anti-crossing region. We find that linear RSOC stems from the structural inversion asymmetry (SIA), while the cubic term is induced by both SIA and bulk asymmetry. Furthermore, the SOC strength shows a striking dependence on the tunable heterostructure parameters such as STO thickness and the interfacial electric field which is ascribed to the quantum confinement effect near the LAO/STO interface. The calculated values of the linear and cubic RSOC are in agreement with previous experimental results.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Zitterbewegung-mediated RKKY coupling in topological insulator thin films

The dynamics of itinerant electrons in topological insulator (TI) thin films is investigated using a multi-band decomposition approach. We show that the electron trajectory in the 2D film is anisotropic and confined within a characteristic region. Remarkably, the confinement and anisotropy of the electron trajectory are associated with the topological phase transition of the TI system, which can be controlled by tuning the film thickness and/or applying an in-plane magnetic field. Moreover, persistent electron wavepacket oscillation can be achieved in the TI thin film system at the phase transition point, which may assist in the experimental detection of the jitter motion (Zitterbewegung). The implications of the microscopic picture of electron motion in explaining other transport-related effects, e.g., electron-mediated RKKY coupling in the TI thin film system, are also discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Controllable p$-$n junctions in three$-$dimensional Dirac semimetal Cd$_3$As$_2$ nanowires

We demonstrate a controllable p$-$n junction in a three$-$dimensional Dirac semimetal (DSM) Cd$_3$As$_2$ nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n$-$n and p$-$p) regime and the bipolar (n$-$p and n$-$p) one, where p$-$n junctions are formed. The conductance in the p$-$n junction regime decreases drastically when a magnetic field is applied perpendicular to the nanowire, which is due to the suppression of Klein tunneling. In this regime, the device shows quantum dot behavior. On the other hand, clear conductance plateaus are observed in the n$-$n regime likely owing to the cyclotron motion of carriers at high magnetic fields. Our experiment shows that the ambipolar tunability of DSM nanowires can enable the realization of quantum devices based on quantum dots and electron optics.

0 citations0 reviewsNo code linkedOpen access