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Source author record

Zhuo Bin Siu

Zhuo Bin Siu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciquant-ph

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Published work

8 published item(s)

preprint2022arXiv

Semiclassical spin transport in LaO/STO system in the presence of multiple Rashba spin orbit couplings

The interaction between the linear and cubic spin-orbit coupling with magnetic moments and mobile spin-polarized carriers in the LaO/STO system provides new avenues for spin transport applications. We study the interplay between linear and cubic Rashba spin orbit coupling (RSOC) on in-plane magnetic moments in the LaO/STO system using the Boltzmann transport theory based on the relaxation time approximation (RTA) and the more refined Schliemann-Loss (SL) delta-potential scattering model. In general, both methods yield a linear (quadratic) relationship between the spin accumulation (spin current) when one of the three RSOC strengths is varied and the other two fixed. The simultaneous presence of multiple types of RSOC with distinct angular dependences is a key ingredient in breaking the k-space symmetry of the Fermi surface, thus ensuring a finite spin accumulation upon integration over the entire Fermi surface. While the oft-used RTA method is sufficiently accurate for spin accumulation calculations, the more refined SL model is required for spin current calculations because the RTA method neglects the anisotropy of the Fermi contour arising from the cubic RSOC terms. Based on the refined SL model and under optimal tuning of the RSOC parameters, the spin charge conversion values in LaO/STO is predicted to reach a remarkable efficiency of 30.

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preprint2021arXiv

Higher Chern Number States in Curved Periodic Nanowires

The coupling between the spin and momentum degrees of freedom due to spin-orbit interactions (SOI) suggests that the strength of the latter can be modified by controlling the motion of the charge carriers. In this paper, we investigate how the effective SOI can be modulated by constraining the motion of charge carriers to curved waveguides thereby introducing real-space geometric curvature in their motion. The change in the SOI can in turn induce topological phase transitions in the system. Specifically, we study how the introduction of periodic sinusoidal curvature in nanowires with intrinsic SOC can induce the onset of mid-gap topologically protected edge states, which can be characterized by a topological invariant or Chern number. The Chern number corresponds to the number of discrete charges that would be pumped across the length of the nanowire when the phase of a sliding gate potential relative to that of the sinusoidal curvature is varied adiabatically over a complete period. In addition, coupling to an external magnetization can be utilized as an experimental knob to modify the Chern number by changing the ordering of the nanowire energy bands. The magnetization can be tuned to achieve large discrete jumps in the number of pump charges per phase period.

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preprint2021arXiv

Non-Hermitian topological phases and exceptional lines in topolectrical circuits

We propose a scheme to realize various non-Hermitian topological phases in a topolectrical (TE) circuit network consisting of resistors, inductors, and capacitors. These phases are characterized by topologically protected exceptional points and lines. The positive and negative resistive couplings Rg in the circuit provide loss and gain factors which break the Hermiticity of the circuit Laplacian. By controlling Rg, the exceptional lines of the circuit can be modulated, e.g., from open curves to closed ellipses in the Brillouin zone. In practice, the topology of the exceptional lines can be detected by the impedance spectra of the circuit. We also considered finite TE systems with open boundary conditions, the admittance spectrum of which exhibits highly tunable zero-admittance states demarcated by boundary points (BPs). The phase diagram of the system shows topological phases which are characterized by the number of their BPs. The transition between different phases can be controlled by varying the circuit parameters and tracked via impedance readout between the terminal nodes. Our TE model offers an accessible and tunable means of realizing different topological phases in a non-Hermitian framework, and characterizing them based on their boundary point and exceptional line configurations.

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preprint2020arXiv

Zitterbewegung-mediated RKKY coupling in topological insulator thin films

The dynamics of itinerant electrons in topological insulator (TI) thin films is investigated using a multi-band decomposition approach. We show that the electron trajectory in the 2D film is anisotropic and confined within a characteristic region. Remarkably, the confinement and anisotropy of the electron trajectory are associated with the topological phase transition of the TI system, which can be controlled by tuning the film thickness and/or applying an in-plane magnetic field. Moreover, persistent electron wavepacket oscillation can be achieved in the TI thin film system at the phase transition point, which may assist in the experimental detection of the jitter motion (Zitterbewegung). The implications of the microscopic picture of electron motion in explaining other transport-related effects, e.g., electron-mediated RKKY coupling in the TI thin film system, are also discussed.

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preprint2019arXiv

Controllable p$-$n junctions in three$-$dimensional Dirac semimetal Cd$_3$As$_2$ nanowires

We demonstrate a controllable p$-$n junction in a three$-$dimensional Dirac semimetal (DSM) Cd$_3$As$_2$ nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n$-$n and p$-$p) regime and the bipolar (n$-$p and n$-$p) one, where p$-$n junctions are formed. The conductance in the p$-$n junction regime decreases drastically when a magnetic field is applied perpendicular to the nanowire, which is due to the suppression of Klein tunneling. In this regime, the device shows quantum dot behavior. On the other hand, clear conductance plateaus are observed in the n$-$n regime likely owing to the cyclotron motion of carriers at high magnetic fields. Our experiment shows that the ambipolar tunability of DSM nanowires can enable the realization of quantum devices based on quantum dots and electron optics.

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preprint2016arXiv

Dirac semimetal thin films in in-plane magnetic fields

In this work we study the effects of in-plane magnetic fields on thin films of the Dirac Semimetal (DSM) \ce{Na2Bi} where one of the in-plane directions is perpendicular to the $k$-separation between the two Weyl points for each spin orientation. We show numerically that the states localized near the surface of these thin films are related to the Fermi arc states in semi-infinite slabs. Due to the anisotropy between the two in-plane directions, the application of a magnetic field along these directions have differing effects. A field parallel to the $k$ space separation between the Weyl points leads to a broadening of the surface state band and a formation of an energy plateau, while a perpendicular field shifts the energy where the hole and particle bands meet upwards and sharpens the tips of the bands. We illustrate the effects of these changes to the bandstructure by studying the transmission from a source segment without a magnetic field to a drain segment with a field with the field and interface at various in-plane directions.

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preprint2016arXiv

Effective Hamiltonian for surface states of \ce{Bi2Te3} nanocylinders with hexagonal warping

The three-dimensional topological insulator \ce{Bi2Te3} differs from other topological insulators in the \ce{Bi2Se3} family in that the effective Hamiltonian of its surface states on a flat semi-infinite slab requires the addition of a cubic momentum hexagonal warping term in order to reproduce the experimentally measured constant energy contours. In this work, we derive the appropriate effective Hamiltonian for the surface states of a \ce{Bi2Te3} \textit{cylinder} incorporating the corresponding hexagonal warping terms in a cylindrical geometry. We show that at the energy range where the surface states dominate, the effective Hamiltonian adequately reproduces the dispersion relation obtained from a full four-band Hamiltonian, which describe both the bulk and surface states. As an example application of our effective Hamiltonian, we study the transmission between two collinear \ce{Bi2Te3} cylinders magnetized in different directions perpendicular to their axes. We show that the hexagonal warping term results in a transmission profile between the cylinders which may be of utility in a multiple state magnetic memory bit.

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preprint2016arXiv

Gauge field in systems with spin orbit interactions and additional discrete degrees of freedom to real spin

The spin gauge field formalism has been used to explain the emergence of out of plane spin accumulation in two-dimensional spin orbit interaction (SOI) systems in the presence of an in-plane electric field. The adiabatic alignment of the charge carrier spins to the momentum dependent SOI field, which changes in time due to the electric field, can be mathematically captured by the addition of a gauge term in the Hamiltonian. This gauge term acts like an effective, electric field dependent magnetization. In this work we show that this effective magnetization can be generalized to systems which include additional discrete degrees of freedom to real spin, such as the pseudospin and/or valley degrees of freedom in emerging materials like molybdenum sulphide and silicene. We show that the generalized magnetization recovers key results from the Sundaram-Niu formalism as well as from the Kubo formula. We then use the generalized magnetization to study the exemplary system of a topological insulator thin film system where the presence of both a top as well as a bottom surface provides an additional discrete degree of freedom in addition to the real spin.

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