Researcher profile

M. Yin

M. Yin contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2026arXiv

Using Legacy Polysomnography Data to Train a Radar System to Quantify Sleep in Older Adults and People living with Dementia

Objective: Ultra-wideband radar technology offers a promising solution for unobtrusive and cost-effective in-home sleep monitoring. However, the limited availability of radar sleep data poses challenges in building robust models that generalize across diverse cohorts and environments. This study proposes a novel deep transfer learning framework to enhance sleep stage classification using radar data. Methods: An end-to-end neural network was developed to classify sleep stages based on nocturnal respiratory and motion signals. The network was trained using a combination of large-scale polysomnography (PSG) datasets and radar data. A domain adaptation approach employing adversarial learning was utilized to bridge the knowledge gap between PSG and radar signals. Validation was performed on a radar dataset of 47 older adults (mean age: 71.2), including 18 participants with prodromal or mild Alzheimer disease. Results: The proposed network structure achieves an accuracy of 79.5% with a Kappa value of 0.65 when classifying wakefulness, rapid eye movement, light sleep and deep sleep. Experimental results confirm that our deep transfer learning approach significantly enhances automatic sleep staging performance in the target domain. Conclusion: This method effectively addresses challenges associated with data variability and limited sample size, substantially improving the reliability of automatic sleep staging models, especially in contexts where radar data is limited. Significance: The findings underscore the viability of UWB radar as a nonintrusive, forward-looking sleep assessment tool that could significantly benefit care for older people and people with neurodegenerative disorders.

preprint2020arXiv

An experimental proof that resistance-switching memories are not memristors

It has been suggested that all resistive-switching memory cells are memristors. The latter are hypothetical, ideal devices whose resistance, as originally formulated, depends only on the net charge that traverses them. Recently, an unambiguous test has been proposed [J. Phys. D: Appl. Phys. {\bf 52}, 01LT01 (2019)] to determine whether a given physical system is indeed a memristor or not. Here, we experimentally apply such a test to both in-house fabricated Cu-SiO2 and commercially available electrochemical metallization cells. Our results unambiguously show that electrochemical metallization memory cells are not memristors. Since the particular resistance-switching memories employed in our study share similar features with many other memory cells, our findings refute the claim that all resistance-switching memories are memristors. They also cast doubts on the existence of ideal memristors as actual physical devices that can be fabricated experimentally. Our results then lead us to formulate two memristor impossibility conjectures regarding the impossibility of building a model of physical resistance-switching memories based on the memristor model.